Abstract: Provided is a vapor deposition method in which a deposition rate can be kept constant, it is not needed to unnecessarily increase a container temperature for improving a deposition rate, and vapor deposition of even a powder material that is easily thermally decomposed can be performed at a desired deposition rate, in vacuum vapor deposition using a powder material. The method is provided by using a container including an accommodating portion configured to accommodate the powder material and at least one opening for releasing vapor of the powder material from the accommodating portion, to perform the vacuum vapor deposition of the powder material by heating the container, in which, in a case where an area of an inner surface of the accommodating portion is S and a total area of the opening is O, a ratio of the total area O of the opening to the area S of the inner surface is 0.06% to 2% as a percentage of O/S.

Abstract: An object of the present invention is to provide a film forming method and an atmospheric plasma film forming apparatus capable of forming a film having high flatness at a high film forming speed by using atmospheric plasma film formation. The object is achieved by introducing plasma generation gas from an inner side flow passage that passes between a pair of electrodes, by introducing raw material gas from at least one of a first outer side flow passage or a second outer side flow passage that pass through an outer side of the pair of electrodes, and by making a gas flow rate between an outlet port of the first outer side flow passage and a substrate and a gas flow rate between an outlet port of the second outer side flow passage and the substrate unequal.

Abstract: A method of manufacturing a gas barrier film comprises, a first film forming step of forming a base layer; a second film forming step of forming a silicon nitride layer on a surface of the base layer; and a third film forming step of forming a protective inorganic layer on a surface of the silicon nitride layer, wherein each of the second film forming step and the third film forming step includes film forming by plasma CVD, wherein the gas barrier film includes the substrate, the base layer, the silicon nitride layer, and the protective inorganic layer, in which the protective inorganic layer formed of silicon oxide, a thickness of the silicon nitride layer is 3 nm to 100 nm, and a ratio t2/t1 of a thickness t2 of the protective inorganic layer to the thickness t1 of the silicon nitride layer 3 to 80.

Abstract: An object of the present invention is to provide a laminated sheet for a metal-clad laminate and a method of manufacturing the same, the laminated sheet including: a substrate that includes a liquid crystal polymer or a fluoropolymer; and an adhesive layer, in which adhesiveness with a metal layer formed on the adhesive layer is excellent. Another object of the present invention is to provide a metal-clad laminate and a method of manufacturing the same. A laminated sheet for a metal-clad laminate includes: a substrate that includes a liquid crystal polymer or a fluoropolymer; an inorganic oxide layer; and an adhesive layer, in which the substrate, the inorganic oxide layer, and the adhesive layer are laminated in this order.

Abstract: Provided is a hard coat laminate having excellent abrasion resistance and heat resistance. The hard coat laminate includes: a substrate; and a base layer disposed on one main surface side of the substrate, in which the base layer contains inorganic nanoparticles, the base layer contains oxygen atoms, carbon atoms, and silicon atoms, the base layer has, on a surface side opposite to the substrate, a first region in which a compositional ratio of carbon atoms to all elements excluding hydrogen decreases as a distance from the substrate increases, in a region other than the first region of the base layer, a compositional ratio of carbon atoms to all elements excluding hydrogen is 5 atom % to 40 atom %, and a compositional ratio of carbon atoms on a surface of the first region is 1 atom % or less.

Abstract: Provided is an organic electroluminescent display device having excellent thermal durability including, in order from a visual recognition side, at least a circularly polarizing plate, and an organic electroluminescent display element having a pair of electrodes and an organic light emitting layer sandwiched therebetween, in which the circularly polarizing plate has a polarizer and an optically anisotropic layer, the polarizer having a thickness of 10 ?m or less and containing a polyvinyl alcohol-based resin, or having a dichroic organic coloring agent, the optically anisotropic layer being formed of a composition containing a polymerizable liquid crystal compound exhibiting reverse wavelength dispersibility, a silicon nitride layer being included between the circularly polarizing plate and the organic electroluminescent display element, and the circularly polarizing plate being disposed between two substrates having a moisture permeability of 1 g/m2·day or less, and one of the low moisture permeability subst

Abstract: Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1?D1 is satisfied.

Abstract: It is an object to provide a functional film which does not require formation of a protective layer by laminating and applying a protective film, and sticking of the protective layer, and also has high moist heat resistance; and a method for producing the same. The object is accomplished by a configuration where the functional film includes a support, an inorganic layer, and a protective layer consisting of a resin film, in which the inorganic layer and the protective layer are directly joined to each other, and in a case where an intensity ratio obtained by dividing an intensity of a maximum peak B in a range of 2,900 to 3,000 cm?1 by an intensity of a maximum peak A in a range of 2,800 to 2,900 cm?1 in an infrared absorption spectrum is defined as B/A, the intensity ratio B/A in a surface of the protective layer on the inorganic layer side is 1.04 times or more the intensity ratio B/A in a surface of the protective layer on the opposite side.

Abstract: A gas barrier film includes a substrate, a base inorganic layer, a silicon nitride layer formed using the base inorganic layer as a base, and a mixed layer formed at a boundary surface of the base inorganic layer and the silicon nitride layer, in which the base inorganic layer contains silicon oxide, the mixed layer contains a component derived from the base inorganic layer and a component derived from the silicon nitride layer, and a thickness of the mixed layer is 3 nm or more.

Abstract: A gas barrier film includes a substrate, a silicon nitride layer, and a protective inorganic layer disposed on a surface side of the silicon nitride layer, which is opposite to a substrate side of the silicon nitride layer, in which the protective inorganic layer formed of silicon oxide, a thickness of the silicon nitride layer is 3 nm to 100 nm, and a ratio t2/t1 of a thickness t2 of the protective inorganic layer to the thickness t1 of the silicon nitride layer 3 to 80.

Abstract: A gas barrier film includes a support, and an inorganic layer containing at least one of oxygen, nitrogen, or carbon, silicon, and hydrogen, in which a hydrogen atom concentration in a region X of the inorganic layer is 10% to 45% by atom, a hydrogen atom concentration in a region Y is 5% to 35% by atom and is lower than the hydrogen atom concentration in the region X, and in the support, an intensity ratio of 3000 to 3500 cm?1/2700 to 3000 cm?1 of an IR spectrum is 1 to 7 as a ratio of inorganic layer side surface/opposite side surface. A film forming method includes heating a base material, forming an inorganic layer by hydrogen addition, and forming another inorganic layer on the base material on which the inorganic layer is formed.

Abstract: A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the O proportion per unit thickness is 2%/nm to 8%/nm.

Abstract: A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the 0 proportion per unit thickness is 2%/nm to 8%/nm.

Abstract: An object of the present invention is to provide a treatment method and a plant of an exhaust gas in which corrosion resistance of the exhaust gas treatment plant to a sulfuric acid mist after wet type desulfurization is increased. The treatment method of an exhaust gas in the present invention, wherein sulfur oxide is removed by wet type desulfurization of the exhaust gas and a sulfuric acid mist is removed by feeding ammonia into the exhaust gas, is characterized in that an ammonia gas is mixed into the exhaust gas by feeding inorganic ammonium salt to an alkali desulfurizing agent when the desulfurizing agent is sprayed into the exhaust gas to absorb and remove the sulfur oxide in the exhaust gas.

Abstract: A gas barrier film including a substrate of which the surface is formed of an organic material; an inorganic film which is formed on the substrate and contains silicon nitride; and a mixed layer which is formed in an interface between the substrate and the inorganic film, and contains components derived from the organic material and the inorganic film, wherein a compositional ratio N/Si between nitrogen and silicon contained in the inorganic film is 1.00 to 1.35, the inorganic film has a film density of 2.1 g/cm3 to 2.4 g/cm3 and a film thickness of 10 nm to 60 nm, and the mixed layer has a thickness of 5 nm to 40 nm.

Abstract: A film deposition device includes a conveyor of a strip of substrate in a conveying direction, a film deposition electrode disposed so as to face the substrate, a counter electrode disposed at an opposite side of the film deposition electrode, gas supplier of film deposition gases and a grounded shield disposed in a planar direction of the substrate so as to surround the film deposition electrode. An upstream end portion of the film deposition electrode in the conveying direction is closer to the substrate than an upstream end portion of the grounded shield in the conveying direction corresponding to the upstream end portion of the film deposition electrode.

Abstract: An object of the present invention is to provide a treatment method and a plant of an exhaust gas in which corrosion resistance of the exhaust gas treatment plant to a sulfuric acid mist after wet type desulfurization is increased. The treatment method of an exhaust gas in the present invention, wherein sulfur oxide is removed by wet type desulfurization of the exhaust gas and a sulfuric acid mist is removed by feeding ammonia into the exhaust gas, is characterized in that an ammonia gas is mixed into the exhaust gas by feeding inorganic ammonium salt to an alkali desulfurizing agent when the desulfurizing agent is sprayed into the exhaust gas to absorb and remove the sulfur oxide in the exhaust gas.

Abstract: A structure for attaching a dust collection electrode of a wet electric dust collector that is low-cost and resistant to entire face corrosion, space corrosion, and hole corrosion. An end of a dust collection electrode element is tightened and slung to be supported by a slung beam slung in a lateral direction in a building accommodating a dust collection apparatus. A supporting member made of Hastelloy® is attached to the dust collection electrode element. The supporting member and the slung beam include attachment holes through which the supporting member and the slung beam are tightened together by a bolt and nut. The slung beam and the dust collection electrode element have therebetween the supporting member to sling and support the slung beam and the dust collection electrode plate so that the slung beam and the dust collection electrode plate are separated from each other.

Abstract: A gas barrier film includes: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is higher than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.

Abstract: The present invention provides a water-flowing mechanism in a wet type electrostatic precipitator that can stably and quickly form a water film on a dust-collecting plate even at the beginning of the operation and that has an excellent adjusting function of a supplying flow-rate of washing liquid. The present invention includes a dust-collecting plate, a washing liquid supplying source to wet the dust-collecting plate, and a cylindrical member that is opened according to the shape of the upper end face of the dust-collecting plate and into which the washing liquid supplying source is inserted, wherein the horizontal cross-section of the dust-collecting plate is formed in a corrugated shape, and the lower opening of the cylindrical member is formed in a corrugated shape according to the dust-collecting plate.