Patents by Inventor Yoshihiko Ozeki
Yoshihiko Ozeki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8710568Abstract: A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section.Type: GrantFiled: October 23, 2008Date of Patent: April 29, 2014Assignee: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Tetsuo Fujii, Kenji Kouno
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Patent number: 8396164Abstract: A receiving device includes a receiving circuit and an impedance control circuit. The receiving circuit receives a signal transmitted through a communication line. The impedance control circuit is coupled with the receiving circuit and has a detecting part. The detecting part detects a physical value of the signal and the physical value includes at least one of a voltage, an electric current, and an electric power. The impedance control circuit changes an input impedance based on the detected value so that a ringing of the signal is reduced.Type: GrantFiled: February 5, 2009Date of Patent: March 12, 2013Assignees: DENSO CORPORATION, Nippon Soken, Inc.Inventors: Youichirou Suzuki, Noboru Maeda, Takashi Nakano, Kazuyoshi Nagase, Koji Kondo, Shigeki Takahashi, Yoshihiko Ozeki
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Patent number: 8290066Abstract: A signal transmission circuit is capable of reducing distortion that occurs during signal transmission. A digital output signal is transmitted from a terminal to a signal line via an output buffer circuit and an output impedance unit. The terminal is connected to an impedance variation unit via an impedance control unit. The impedance variation unit designates an impedance for terminating the signal line when the output data is changed from a high level H to a low level. A reflection occurring on the signal line can be prevented and a waveform distortion can be suppressed.Type: GrantFiled: May 7, 2009Date of Patent: October 16, 2012Assignees: Nippon Soken, Inc., DENSO CORPORATIONInventors: Hiroyuki Mori, Norio Sanma, Yoshihiko Ozeki, Kazuyoshi Nagase
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Patent number: 8102025Abstract: A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.Type: GrantFiled: February 22, 2007Date of Patent: January 24, 2012Assignee: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Norihito Tokura, Yukio Tsuzuki
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Patent number: 8026572Abstract: A semiconductor device having plural active and passive elements on one semiconductor substrate is manufactured in the following cost effective manner even when the active and passive elements include double sided electrode elements. When the semiconductor substrate is divided into plural field areas, an insulation separation trench that penetrates the semiconductor substrate surrounds each of the field areas, and each of the either of the plural active elements or the plural passive elements. Further, each of the plural elements has a pair of power electrodes for power supply respectively disposed on each of both sides of the semiconductor substrate to serve as the double sided electrode elements.Type: GrantFiled: December 4, 2007Date of Patent: September 27, 2011Assignee: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Kenji Kouno, Tetsuo Fujii
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Publication number: 20100177829Abstract: A receiving device includes a receiving circuit and an impedance control circuit. The receiving circuit receives a signal transmitted through a communication line. The impedance control circuit is coupled with the receiving circuit and has a detecting part. The detecting part detects a physical value of the signal and the physical value includes at least one of a voltage, an electric current, and an electric power. The impedance control circuit changes an input impedance based on the detected value so that a ringing of the signal is reduced.Type: ApplicationFiled: February 5, 2009Publication date: July 15, 2010Applicants: DENSO CORPORATION, NIPPON SOKEN, INC.Inventors: Youichirou Suzuki, Noboru Maeda, Takashi Nakano, Kazuyoshi Nagase, Koji Kondo, Shigeki Takahashi, Yoshihiko Ozeki
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Patent number: 7692221Abstract: A semiconductor device having an insulated gate bipolar transistor (IGBT) is formed on a semiconductor substrate. A base region and an emitter are formed on a first surface of the substrate while a collector layer is formed on second surface of the substrate. A region having a low breakdown voltage is formed on the first surface around the IGBT, and a carrier collecting region is formed in the vicinity of the region having the low breakdown voltage. The IGBT is prevented from being broken down due to an avalanche phenomenon, because the breakdown occurs in the region having the low breakdown voltage, and carriers of the breakdown current are collected through the carrier collecting region. The breakdown of the IGBT is further effectively prevented by forming a guard ring for suppressing electric field concentration around the region having the low breakdown voltage.Type: GrantFiled: March 6, 2007Date of Patent: April 6, 2010Assignee: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Yukio Tsuzuki
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Patent number: 7667269Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 ?m.Type: GrantFiled: April 6, 2006Date of Patent: February 23, 2010Assignee: DENSO CORPORATIONInventors: Yukio Tsuzuki, Norihito Tokura, Yoshihiko Ozeki, Kensaku Yamamoto
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Publication number: 20090279617Abstract: A signal transmission circuit is capable of reducing distortion that occurs during signal transmission. A digital output signal is transmitted from a terminal to a signal line via an output buffer circuit and an output impedance unit. The terminal is connected to an impedance variation unit via an impedance control unit. The impedance variation unit designates an impedance for terminating the signal line when the output data is changed from a high level H to a low level. A reflection occurring on the signal line can be prevented and a waveform distortion can be suppressed.Type: ApplicationFiled: May 7, 2009Publication date: November 12, 2009Applicants: NIPPON SOKEN, INC., DENSO CORPORATIONInventors: Hiroyuki Mori, Norio Sanma, Yoshihiko Ozeki, Kazuyoshi Nagase
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Publication number: 20090108288Abstract: A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section.Type: ApplicationFiled: October 23, 2008Publication date: April 30, 2009Applicant: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Tetsuo Fujii, Kenji Kouno
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Patent number: 7498658Abstract: A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for separating the third semiconductor layer into first regions and second regions; a gate insulation film on an inner wall of each trench; a gate electrode on the gate insulation film; a fourth semiconductor layer in a surface portion of each first region and contacting each trench; a first electrode connecting to the first region and the fourth semiconductor layer; and a second electrode connecting to the first semiconductor layer. The first regions and the second regions are alternately arranged. Two second regions are continuously connected together to be integrated into one body.Type: GrantFiled: April 13, 2006Date of Patent: March 3, 2009Assignee: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Kensaku Yamamoto
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Patent number: 7456484Abstract: A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.Type: GrantFiled: January 3, 2007Date of Patent: November 25, 2008Assignee: Denso CorporationInventors: Yoshihiko Ozeki, Norihito Tokura, Yukio Tsuzuki
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Publication number: 20080135932Abstract: A semiconductor device having plural active and passive elements on one semiconductor substrate is manufactured in the following cost effective manner even when the active and passive elements include double sided electrode elements. When the semiconductor substrate is divided into plural field areas, an insulation separation trench that penetrates the semiconductor substrate surrounds each of the field areas, and each of the either of the plural active elements or the plural passive elements. Further, each of the plural elements has a pair of power electrodes for power supply respectively disposed on each of both sides of the semiconductor substrate to serve as the double sided electrode elements.Type: ApplicationFiled: December 4, 2007Publication date: June 12, 2008Applicant: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Kenji Kouno, Tetsuo Fujii
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Publication number: 20070215898Abstract: A semiconductor device having an insulated gate bipolar transistor (IGBT) is formed on a semiconductor substrate. Abase region and an emitter are formed on a first surface of the substrate while a collector layer is formed on second surface of the substrate. A region having a low breakdown voltage is formed on the first surface around the IGBT, and a carrier collecting region is formed in the vicinity of the region having the low breakdown voltage. The IGBT is prevented from being broken down due to an avalanche phenomenon, because the breakdown occurs in the region having the low breakdown voltage, and carriers of the breakdown current are collected through the carrier collecting region. The breakdown of the IGBT is further effectively prevented by forming a guard ring for suppressing electric field concentration around the region having the low breakdown voltage.Type: ApplicationFiled: March 6, 2007Publication date: September 20, 2007Applicant: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Yukio Tsuzuki
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Publication number: 20070200138Abstract: A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.Type: ApplicationFiled: February 22, 2007Publication date: August 30, 2007Applicant: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Norihito Tokura, Yukio Tsuzuki
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Publication number: 20070158680Abstract: A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.Type: ApplicationFiled: January 3, 2007Publication date: July 12, 2007Applicant: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Norihito Tokura, Yukio Tsuzuki
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Publication number: 20060244053Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 ?m.Type: ApplicationFiled: April 6, 2006Publication date: November 2, 2006Applicant: DENSO CORPORATIONInventors: Yukio Tsuzuki, Norihito Tokura, Yoshihiko Ozeki, Kensaku Yamamoto
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Publication number: 20060244104Abstract: A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for separating the third semiconductor layer into first regions and second regions; a gate insulation film on an inner wall of each trench; a gate electrode on the gate insulation film; a fourth semiconductor layer in a surface portion of each first region and contacting each trench; a first electrode connecting to the first region and the fourth semiconductor layer; and a second electrode connecting to the first semiconductor layer. The first regions and the second regions are alternately arranged. Two second regions are continuously connected together to be integrated into one body.Type: ApplicationFiled: April 13, 2006Publication date: November 2, 2006Applicant: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Kensaku Yamamoto
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Publication number: 20060055056Abstract: Semiconductor equipment includes: a semiconductor device; a pair of upper and lower heat radiation plates; and a heat radiation block. The heat radiation block has a planar shape, which is smaller than a planer shape of the semiconductor device. The semiconductor device includes a heat generation portion facing the heat radiation block. The heat generation portion has a periphery edge, which is determined such that a distance between the periphery edge of the heat generation portion and a periphery edge of the heat radiation block is equal to or shorter than 1.0 mm.Type: ApplicationFiled: November 19, 2004Publication date: March 16, 2006Inventors: Shoji Miura, Yoshihiko Ozeki, Yoshimi Nakase, Nobuyuki Kato, Tetsuji Kondou, Takanori Teshima, Naoki Hirasawa
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Patent number: 6765266Abstract: In a semiconductor device of the present invention, a first semiconductor region is formed so that a peripheral edge thereof is located between a first field plate ring that corresponds to one of field plate rings located at the innermost side thereof and a second field plate ring that corresponds to one of the field plate rings adjacent the first plate ring. Accordingly, when a surge voltage is applied to the semiconductor device of the present invention, an electric field concentration at a part of the isolation film located under the first one of the field plate rings is relaxed and an electric field intensity decreases. Therefore, the reliability of the isolation film for withstanding the surge voltage increases.Type: GrantFiled: December 3, 2002Date of Patent: July 20, 2004Assignee: Denso CorporationInventors: Yoshihiko Ozeki, Yutaka Tomatsu, Norihito Tokura, Haruo Kawakita