Abstract: Provided is a probe head capable of reducing an inductance value of a ground probe. In a probe head 1, a pin plate 40, a pin block 50, and a solder resist film 60 are stacked in this order from a measuring instrument side to be integrally formed, and constitute a support body that supports a signal probe 10 and a first ground probe 20. The pin plate 40 is an insulator. The pin block 50 is a conductor, and is electrically connected to the first ground probe 20 and a measuring instrument-side ground, and is not electrically connected to the signal probe 10. The solder resist film 60 is provided on the surface of the pin block 50 on a side of a device to be inspected, and is interposed between the pin block 50 and the device to be inspected.

Abstract: Provided is a probe head capable of reducing an inductance value of a ground probe. In a probe head 1, a pin plate 40, a pin block 50, and a solder resist film 60 are stacked in this order from a measuring instrument side to be integrally formed, and constitute a support body that supports a signal probe 10 and a first ground probe 20. The pin plate 40 is an insulator. The pin block 50 is a conductor, and is electrically connected to the first ground probe 20 and a measuring instrument-side ground, and is not electrically connected to the signal probe 10. The solder resist film 60 is provided on the surface of the pin block 50 on a side of a device to be inspected, and is interposed between the pin block 50 and the device to be inspected.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS•FETs.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.

Abstract: A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer The well region is formed with the gate insulating films of MIS·FETs.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS.FETS.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS.FETs.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS.FETs.

Abstract: An ink jet printer has a print head adapted to move in a printing area and in a wiping area outside of the printing area. The print head ejects ink drops through orifices in accordance with print data while it is moving in the print area. The wiper is disposed in the wiping area. The nozzle plate having orifices formed therethrough is wiped off when the print head moves in the wiping area. A wiper transporting mechanism includes a supporting mechanism for supporting and moving the wiper parallel with the print head when the print head moves in the wiping area, the wiper being transported at a velocity lower than the print head so that the wiper gently wipes the nozzle plate preventing the ink adhering to the wiper from splashing.

Abstract: A control unit for a vehicle air-conditioner system of the type incorporating an in-car sensor and an aspirator fan has a circuit board mounted in a casing equipped with a control panel, an aspirator fan for sucking passenger compartment air into the casing through an air intake in the panel is provided on the circuit board, and a detection element for detecting vehicle passenger compartment temperature is attached to the circuit board to be disposed in the flow path of the passenger compartment air sucked in through the air intake. Some or all necessary components requiring cooling are disposed in the flow path at points downstream of the detection element.

Abstract: A vehicle air-conditioning system which operates in response to the manipulation of momentary switches is provided with discriminating means for discriminating whether any momentary switch is on at the time of system power-up. When the discriminating means finds that one or more momentary switches are on, the vehicle air-conditioning system is set to a predefined initial control state independent of contact information from such momentary switch or switches. As a result, at least the minimum temperature control required for occupant comfort can be secured when shorted contact sticking occurs in a momentary switch provided on an operation panel.

Abstract: An automobile air-conditioner wherein a controlled variable used to determine the control mode of a component of the air-conditioner is corrected or restricted according to the amount of shifting of the head part setting temperature for driving the component of the air-conditioner based on the corrected or restricted controlled variable. With this arrangement, an occupant of the automobile senses an enhanced change of the air-conditioning operation when the head part setting temperature is changed.

Abstract: An automobile air-conditioner wherein a controlled variable used to determine the control mode of a component of the air-conditioner is corrected or restricted according to the amount of shifting of the head part setting temperature for driving the component of the air-conditioner based on the corrected or restricted controlled variable. With this arrangement, an occupant of the automobile senses an enhanced change of the air-conditioning operation when the head part setting temperature is changed.

Abstract: In an air conditioner including a variable-capacity compressor, a control system performs a PI calculation based on a temperature deviation between the actual temperature of the air downstream of an evaporator and its target temperature, thereby determining a control amount for controlling the capacity of the compressor. It is judged whether or not the sum of a proportional control component and an integral control component exceeds a limit value of the control amount corresponding to the maximum capacity of the compressor. If this judgment is in the affirmative, an ordinary integral calculation is stopped, and the integral control component is determined by subtracting the proportional control component from this limit value.

Abstract: An automobile air-conditioner capable of controlling the displacement of a compressor in view of the traveling condition and air-conditioning condition of an automobile so as to maintain a pleasant feeling of the air-conditioning and an accelerating ability of the automobile in harmony with each other. The air-conditioner includes an air-conditioning preference judgment device by means of which a normal control of the air-conditioning operation is maintained when the judgment of this judgment means indicates the existence of an air-conditioning preference condition. The air-conditioning is performed in preference to acceleration of the automobile depending on the degree of acceleration of the automobile even when the automobile is accelerated.

Abstract: An air conditioning control system for an automotive vehicle having an internal combustion engine. A variable capacity compressor has a pump having displacement thereof variable in response to a change in pressure within a controlled pressure chamber, a communication passage communicating between a low pressure chamber and the controlled pressure chamber, and a valve disposed to vary an opening area of the communication passage. An electromagnetic clutch connects and disconnects the compressor to and from the engine. An evaporator is connected to the compressor. A control unit controls the capacity of the compressor by supplying the valve with control current normally set within a predetermined range, to vary the opening area of the communication passage such that the temperature of outlet air from the evaporator becomes equal to a desired value.

Abstract: An apparatus for controlling an automotive air-conditioner wherein an air distribution to left and right sides of a vehicle passenger compartment is achieved either in an automatic control mode or in a manual control mode which is selected by a judgement made based on the vehicle passenger compartment and the quantity of solar radiation. In case of the automatic control mode, the rate of change of the air distribution control is changed dependent upon the position set by an air-distribution setting unit relative to the direction of solar radiation so as to meet the occupant desire.

Abstract: A method of controlling the idling rotational speed of an internal combustion engine for an automotive vehicle equipped with an air conditioning system having a variable capacity compressor disposed to be driven by the engine and capable of being controlled by an external control signal. A value of a capacity control signal as the external control signal for controlling the capacity of the compressor is calculated. A value of torque required for starting the compressor is calculated based upon ambient temperature and the calculated value of the capacity control signal. The engine idling rotational speed is increased in accordance with the calculated starting torque.