Abstract: [Problem] To provide a thermoplastic resin composition for use in an organ model, wherein said composition has a softness closer to that of an organ, a high mechanical strength, and a texture close to an organ, exhibits excellent durability, and can be handled easily. [Solution] A resin composition for an organ model, said composition containing, as component (A), 100 parts by mass of a hydrogenated block copolymer having an MFR (measured at a temperature of 230° C. and a load of 2.16 kg) of 1 g/10 min. or less, and an oil as component (B). Moreover, the composition may also contain a cross copolymer as component (C), a polypropylene resin as component (D), and a filler as component (E).

Abstract: [Problem] To provide a thermoplastic resin composition for use in an organ model, wherein said composition has a softness closer to that of an organ, a high mechanical strength, and a texture close to an organ, exhibits excellent durability, and can be handled easily. [Solution] A resin composition for an organ model, said composition containing, as component (A), 100 parts by mass of a hydrogenated block copolymer having an MFR (measured at a temperature of 230° C. and a load of 2.16 kg) of 1 g/10 min. or less, and an oil as component (B). Moreover, the composition may also contain a cross copolymer as component (C), a polypropylene resin as component (D), and a filler as component (E).

Abstract: A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 ?m; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 ?m, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×106 to 7.5×10?6/K, a ratio of the maximum to the minimum value of coefficient of thermal expansion in three perpendicular directions of 1-1.

Abstract: A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 ?m; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 ?m, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×106 to 7.5×10?6/K, a ratio of the maximum to the minimum value of coefficient of thermal expansion in three perpendicular directions of 1-1.

Abstract: A metal base circuit board to be used for a hybrid integrated circuit, including circuits provided on a metal plate via an insulating layer, a power semiconductor mounted on the circuit, and a control semiconductor to control the power semiconductor, provided on the circuit. A low capacitance portion is embedded under a circuit portion on which the control semiconductor is mounted, preferably. The low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.

Abstract: A metal base circuit board to be used for a hybrid integrated circuit, including circuits provided on a metal plate via an insulating layer, a power semiconductor mounted on the circuit, and a control semiconductor to control the power semiconductor, provided on the circuit. A low capacitance portion is embedded under a circuit portion on which the control semiconductor is mounted, preferably. The low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.

Abstract: An article comprising a metal circuit and/or a heat-radiating metal plate formed on a ceramic substrate, wherein the metal circuit and/or the heat-radiating metal plate comprise either (1) the following first metal-second metal bonded product, wherein the first metal and the second metal are different, or (2) the following first metal-third metal-second metal bonded product, and wherein in (1) and (2), the first metal is bonded to the ceramic substrate; first metal: a metal selected from the group consisting of aluminum (Al), lead (Pb), platinum (Pt) and an alloy containing at least one of these metal components; second metal: a metal selected from the group consisting of copper (Cu), silver (Ag), gold (Au), aluminum (Al) and an alloy containing at least one of these metal components; and third metal: a metal selected from the group consisting of titanium (Ti), nickel (Ni), zirconium (Zr), molybdenum (Mo), tungsten (W) and an alloy containing at least one of these metal components.