Abstract: According to the present disclosure, there is provided a technique capable of preventing a substrate from being warped or cracked due to a heat treatment process. According to one aspect thereof, there is provided a substrate processing apparatus including: a process chamber in which a plurality of substrates accommodated in a substrate retainer are processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier configured to supply a cooling gas is supplied to between adjacent substrates among the plurality of substrates via a plurality of gas supply ports provided so as to correspond to an interval of the plurality of substrates accommodated in the substrate retainer.

Abstract: There is provided a technique that includes: a process container processing one or more substrates; a support installed inside the process container and supporting the substrates on plane of the support; a first gas supplier capable of supplying first gas to first domain set in the process container; a second gas supplier capable of supplying second gas to second domain set in the process container; an exhaust buffer structure installed along outer circumference of the support; a first gas exhauster connected to the exhaust buffer structure and installed at downstream side of a flow of the first gas supplied from the first gas supplier; a second gas exhauster connected to the exhaust buffer structure and installed at a downstream side of a flow of the second gas supplied from the second gas supplier; and a third gas supplier capable of supplying a cleaning gas to the exhaust buffer structure.

Abstract: Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.

Abstract: Described herein is a technique capable of uniformly processing a substrate. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a microwave generator configured to supply a microwave to the process chamber to perform a heat treatment on the substrate; a substrate retainer configured to accommodate the substrate and a heat retainer provided above the substrate and retaining a temperature of the substrate heated by the microwave; and a first ring plate provided on an outer circumference of the heat retainer and whose outer diameter is greater than that of the substrate.

Abstract: A process chamber configured to process at least one substrate; at least one heating device to heat the at least one substrate using an electromagnetic wave; a non-contact type temperature measurement device configured to measure a temperature of the at least one substrate; and a controller configured to acquire temperature data measured by the temperature measurement device, compare the measured temperature with a preset upper limit temperature and a preset lower limit temperature, lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is higher than the upper limit temperature, and lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is lower than the lower limit temperature.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.

Abstract: There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.

Abstract: A heating element which is made of a material heated by absorbing an electromagnetic wave supplied from a heating device and which has an electromagnetic wave transmission region which transmits the electromagnetic wave and an electromagnetic wave non-transmission region which does not transmit the electromagnetic wave.

Abstract: According to one aspect of the technique, there is provided a substrate processing apparatus including: a process housing including a process chamber in which a substrate is processed; a transfer housing provided adjacent to the process housing and comprising a transfer chamber wherein the substrate is transferred between the process chamber and the transfer chamber; a microwave generator configured to transmit a microwave to be supplied into the process chamber; a loading/unloading port connecting between the process chamber and the transfer chamber and through which the substrate is transferred; an opening/closing structure configured to open or close the loading/unloading port; and a detection sensor provided in the transfer chamber adjacent to the loading/unloading port and configured to detect the microwave leaking to the transfer chamber from the process chamber through the loading/unloading port while the opening/closing structure maintains the loading/unloading port closed.

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Abstract: There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.

Abstract: A heating element which is made of a material heated by absorbing an electromagnetic wave supplied from a heating device and which has an electromagnetic wave transmission region which transmits the electromagnetic wave and an electromagnetic wave non-transmission region which does not transmit the electromagnetic wave.

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Abstract: Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.

Abstract: A process chamber configured to process at least one substrate; at least one heating device to heat the at least one substrate using an electromagnetic wave; a non-contact type temperature measurement device configured to measure a temperature of the at least one substrate; and a controller configured to acquire temperature data measured by the temperature measurement device, compare the measured temperature with a preset upper limit temperature and a preset lower limit temperature, lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is higher than the upper limit temperature, and lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is lower than the lower limit temperature.

Abstract: A substrate processing apparatus, including: a process chamber configured to process a substrate, a transfer chamber adjoining the process chamber, a shaft installed in the transfer chamber, a substrate mounting stand connected to the shaft and including a heating part, a first thermal insulation part installed in a wall of the transfer chamber at a side of the process chamber, and a second thermal insulation part installed in the shaft at a side of the substrate mounting stand.

Abstract: A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Abstract: A substrate processing apparatus includes: a processing chamber for processing a substrate; a substrate holding part whereon the substrate is placed; an elevating mechanism to move the substrate holding part vertically; a first gas supply system to supply a halogen-containing process gas to the substrate; a second gas supply system to supply an inert gas to the substrate; an exhaust unit to exhaust the process and inert gases; and a controller to control the elevating mechanism and the gas supply systems to: supply the process gas with a state where heights of the substrate holding part and exhaust unit are adjusted; and supply the inert gas to a center portion of the substrate from thereabove such that the inert gas flows radially from the center portion to a circumference of the substrate along a surface of the substrate and is exhausted out of the processing chamber through the exhaust unit.

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

Abstract: The present invention provides a structure and a technique through which a reaction heat generated in a substrate process can be absorbed in a low temperature range and a temperature of a substrate support (susceptor) can remain at a predetermined temperature or less. There is provided a substrate processing apparatus including: a substrate support including a heater and a cooling channel; a heater power supply; a thermal detector; a coolant supply unit; a controller configured to control the heater power supply and the coolant supply unit to: supply a first power to the heater without a substrate placed on the substrate support while supplying the coolant to the cooling channel; and supply a second power to the heater with the substrate placed on the substrate support while supplying the coolant to the cooling channel.