Patents by Inventor Yoshihiko Yanagisawa

Yoshihiko Yanagisawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200194287
    Abstract: There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.
    Type: Application
    Filed: February 20, 2020
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yukitomo HIROCHI, Takashi NOGAMI, Yoshihiko YANAGISAWA
  • Publication number: 20200152490
    Abstract: A heating element which is made of a material heated by absorbing an electromagnetic wave supplied from a heating device and which has an electromagnetic wave transmission region which transmits the electromagnetic wave and an electromagnetic wave non-transmission region which does not transmit the electromagnetic wave.
    Type: Application
    Filed: January 25, 2019
    Publication date: May 14, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventor: Yoshihiko YANAGISAWA
  • Publication number: 20190393056
    Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.
    Type: Application
    Filed: September 6, 2019
    Publication date: December 26, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yukitomo HIROCHI, Kazuhiro YUASA, Tetsuo YAMAMOTO, Yoshihiko YANAGISAWA, Shinya SASAKI, Noriaki MICHITA
  • Publication number: 20190378731
    Abstract: Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.
    Type: Application
    Filed: August 23, 2019
    Publication date: December 12, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshihiko YANAGISAWA, Yukitomo HIROCHI
  • Publication number: 20190182915
    Abstract: A process chamber configured to process at least one substrate; at least one heating device to heat the at least one substrate using an electromagnetic wave; a non-contact type temperature measurement device configured to measure a temperature of the at least one substrate; and a controller configured to acquire temperature data measured by the temperature measurement device, compare the measured temperature with a preset upper limit temperature and a preset lower limit temperature, lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is higher than the upper limit temperature, and lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is lower than the lower limit temperature.
    Type: Application
    Filed: February 20, 2019
    Publication date: June 13, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yukitomo HIROCHI, Yoshihiko YANAGISAWA
  • Publication number: 20170186634
    Abstract: A substrate processing apparatus, including: a process chamber configured to process a substrate, a transfer chamber adjoining the process chamber, a shaft installed in the transfer chamber, a substrate mounting stand connected to the shaft and including a heating part, a first thermal insulation part installed in a wall of the transfer chamber at a side of the process chamber, and a second thermal insulation part installed in the shaft at a side of the substrate mounting stand.
    Type: Application
    Filed: March 16, 2016
    Publication date: June 29, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshihiko YANAGISAWA, Masaaki UENO, Naofumi OHASHI
  • Patent number: 9546422
    Abstract: A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: January 17, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshihiko Yanagisawa, Tetsuaki Inada
  • Publication number: 20160379848
    Abstract: A substrate processing apparatus includes: a processing chamber for processing a substrate; a substrate holding part whereon the substrate is placed; an elevating mechanism to move the substrate holding part vertically; a first gas supply system to supply a halogen-containing process gas to the substrate; a second gas supply system to supply an inert gas to the substrate; an exhaust unit to exhaust the process and inert gases; and a controller to control the elevating mechanism and the gas supply systems to: supply the process gas with a state where heights of the substrate holding part and exhaust unit are adjusted; and supply the inert gas to a center portion of the substrate from thereabove such that the inert gas flows radially from the center portion to a circumference of the substrate along a surface of the substrate and is exhausted out of the processing chamber through the exhaust unit.
    Type: Application
    Filed: September 8, 2016
    Publication date: December 29, 2016
    Inventors: Yoshihiko YANAGISAWA, Hidehiro YANAI
  • Patent number: 9518321
    Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: December 13, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Mitsuro Tanabe, Yoshihiko Yanagisawa, Kazuhiro Yuasa, Masanori Sakai, Yasutoshi Tsubota
  • Publication number: 20160079101
    Abstract: The present invention provides a structure and a technique through which a reaction heat generated in a substrate process can be absorbed in a low temperature range and a temperature of a substrate support (susceptor) can remain at a predetermined temperature or less. There is provided a substrate processing apparatus including: a substrate support including a heater and a cooling channel; a heater power supply; a thermal detector; a coolant supply unit; a controller configured to control the heater power supply and the coolant supply unit to: supply a first power to the heater without a substrate placed on the substrate support while supplying the coolant to the cooling channel; and supply a second power to the heater with the substrate placed on the substrate support while supplying the coolant to the cooling channel.
    Type: Application
    Filed: September 9, 2015
    Publication date: March 17, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hidehiro YANAI, Yoshihiko YANAGISAWA, Yasutoshi TSUBOTA
  • Publication number: 20160032457
    Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.
    Type: Application
    Filed: September 11, 2014
    Publication date: February 4, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Mitsuro TANABE, Yoshihiko YANAGISAWA, Kazuhiro YUASA, Masanori SAKAI, Yasutoshi TSUBOTA
  • Publication number: 20150050815
    Abstract: Provided is a semiconductor device manufacturing method which has: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.
    Type: Application
    Filed: March 13, 2013
    Publication date: February 19, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshihiko Yanagisawa, Tetsuaki Inada
  • Patent number: 8222161
    Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: July 17, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe, Harunobu Sakuma, Tadashi Takasaki
  • Patent number: 8172950
    Abstract: Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: May 8, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe
  • Publication number: 20110192347
    Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
    Type: Application
    Filed: April 18, 2011
    Publication date: August 11, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshihiko YANAGISAWA, Mitsuro TANABE, Harunobu SAKUMA, Tadashi TAKASAKI
  • Patent number: 7943528
    Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: May 17, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe, Harunobu Sakuma, Tadashi Takasaki
  • Publication number: 20110053382
    Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
    Type: Application
    Filed: August 25, 2010
    Publication date: March 3, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshihiko YANAGISAWA, Mitsuro TANABE, Harunobu SAKUMA, Tadashi TAKASAKI
  • Publication number: 20090017641
    Abstract: Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.
    Type: Application
    Filed: November 28, 2006
    Publication date: January 15, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe