Abstract: A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

Abstract: A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

Abstract: In a semiconductor device in the related art, it has been necessary to match the threshold voltage of a power element with the circuit operation of a gate driver; accordingly, it has been difficult to realize the operation of the gate driver most appropriate for the employed power element. According to one embodiment, when a power element is turned off, the semiconductor device monitors the collector voltage of the power element, and increases the number of NMOS transistors that draw out charges from the gate of the power element in a period until the collector voltage becomes lower than the pre-set determination threshold, rather than in the period after the collector voltage becomes lower than the determination threshold.

Abstract: A power conversion system includes a high-side circuit and a low-side circuit, a controller communicating with the high-side circuit and the low-side circuit; a first coupling circuit including a wire between the controller and the high-side circuit; and a second coupling circuit including a wire between the controller and the low-side circuit.

Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

Abstract: There is a problem in related-art semiconductor devices that the chip size of a semiconductor device having an active Miller clamp function cannot be reduced. According to one embodiment, a semiconductor device is configured to, when a power device is turned on or off, monitor a gate voltage Vg of the power device, set a predetermined range within a transition range, the transition range being a range within which the gate voltage Vg changes, change, when the gate voltage Vg is within the predetermined range, the gate voltage Vg of the power device by using a predetermined number of constant-current circuits, and change, when the gate voltage Vg is outside the predetermined range, the gate voltage Vg by using a larger number of constant-current circuits than the number of constant-current circuits that are used when the gate voltage Vg is within the predetermined range.

Abstract: A power conversion system has a first coupling circuit including a wire between a controller and a high-side circuit and a second coupling circuit including a wire between the controller and a low-side circuit. The first coupling circuit has a diode having an anode coupled to a wire from the controller and a cathode coupled to a wire from the high-side circuit.

Abstract: To provide a semiconductor device capable of preventing a surge voltage at the time of turn-off without complicating a gate drive circuit and without increasing switching delay. A semiconductor device has a configuration in which a plurality of transistors are equivalently coupled in parallel by including a plurality of control electrodes for controlling a current flowing between a first main electrode and a second main electrode. A resistance value of a transmission path of a control signal from a common control terminal varies with respect to each of the control electrodes.

Abstract: There is a problem in related-art semiconductor devices that the chip size of a semiconductor device having an active Miller clamp function cannot be reduced. According to one embodiment, a semiconductor device is configured to, when a power device is turned on or off, monitor a gate voltage Vg of the power device, set a predetermined range within a transition range, the transition range being a range within which the gate voltage Vg changes, change, when the gate voltage Vg is within the predetermined range, the gate voltage Vg of the power device by using a predetermined number of constant-current circuits, and change, when the gate voltage Vg is outside the predetermined range, the gate voltage Vg by using a larger number of constant-current circuits than the number of constant-current circuits that are used when the gate voltage Vg is within the predetermined range.

Abstract: In a semiconductor device in the related art, it has been necessary to match the threshold voltage of a power element with the circuit operation of a gate driver; accordingly, it has been difficult to realize the operation of the gate driver most appropriate for the employed power element. According to one embodiment, when a power element is turned off, the semiconductor device monitors the collector voltage of the power element, and increases the number of NMOS transistors that draw out charges from the gate of the power element in a period until the collector voltage becomes lower than the pre-set determination threshold, rather than in the period after the collector voltage becomes lower than the determination threshold.

Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

Abstract: A power conversion system has a first coupling circuit including a wire between a controller and a high-side circuit and a second coupling circuit including a wire between the controller and a low-side circuit. The first coupling circuit has a diode having an anode coupled to a wire from the controller and a cathode coupled to a wire from the high-side circuit.

Abstract: A marker formed on a stent which is to be mounted within a human body, the marker being formed without applying gold plating or gold foil onto the stent and allowing the position of the stent in the human body to be confirmed by a recognition means. A marker (A, B) used to confirm the position in a human body of a stent (C) consisting of wires is formed by fitting pipes (10-12), which consist of a raw material which can be recognized by a recognition means, on a portion at which at least two wires constituting the stent (C) are located close to each other. The stent (C) comprises a stent main wire (1) formed in a zigzag pattern, and the pipes (10-12) are fitted to zigzag-shaped turn-back sections (E) of the stent main wire (1).

Abstract: A stent including a plurality of loop stents connected by struts so that it bends uniformly as a whole. A stent A including a plurality of loop stents 2 connected by a plurality of struts 3, the loop stents 2 each formed of a stent main wire 1 folded into a zigzag shape and joined at its ends, wherein the bending strength of each strut 3 is larger than the bending strength of the stent main wire 1.

Abstract: A tubular medical treatment instrument indwelling device for indwelling a stent graft expandable in the radial direction, includes a tubular sheath, a rod member configured to move forward and backward inside the sheath along the axial direction of the sheath, and a front tip provided in the forward end portion of the rod member and includes, formed therein, an engaging portion being engageable with an engagement portion provided in the stent graft. The engaging portion is formed in a position where it is hided inside the sheath when the forward end portion of the sheath is sealed with the front tip. The tubular medical treatment instrument indwelling device is capable of inhibiting damaging of a blood vessel or freeing of parietal thrombus/parietal atheroma from occurring.

Abstract: A tubular medical treatment instrument indwelling device for indwelling a stent graft expandable in the radial direction, includes a tubular sheath, a rod member configured to move forward and backward inside the sheath along the axial direction of the sheath, and a front tip provided in the forward end portion of the rod member and includes, formed therein, an engaging portion being engageable with an engagement portion provided in the stent graft. The engaging portion is formed in a position where it is hided inside the sheath when the forward end portion of the sheath is sealed with the front tip. The tubular medical treatment instrument indwelling device is capable of inhibiting damaging of a blood vessel or freeing of parietal thrombus/parietal atheroma from occurring.

Abstract: A marker formed on a stent which is to be mounted within a human body, the marker being formed without applying gold plating or gold foil onto the stent and allowing the position of the stent in the human body to be confirmed by a recognition means. A marker (A, B) used to confirm the position in a human body of a stent (C) consisting of wires is formed by fitting pipes (10-12), which consist of a raw material which can be recognized by a recognition means, on a portion at which at least two wires constituting the stent (C) are located close to each other. The stent (C) comprises a stent main wire (1) formed in a zigzag pattern, and the pipes (10-12) are fitted to zigzag-shaped turn-back sections (E) of the stent main wire (1).

Abstract: A stent graft indwelling device (1) comprising a dilator (10) and a sheath (30) in which the dilator (10) and a stent graft (60) are to be loaded, the stent graft indwelling device (1) having a wire (40) or a fixed chip (20) as means for adjusting the insertion angle and/or indwelling site of the stent graft (60) when the stent graft (60) is released from the sheath (30) in a diseased part by this indwelling device, so that the insertion angle and indwelling site can be finely adjusted in a blood vessel in a semi-expansion state where the stent graft is not completely expanded.

Abstract: A stent including a plurality of loop stents connected by struts so that it bends uniformly as a whole. A stent A including a plurality of loop stents 2 connected by a plurality of struts 3, the loop stents 2 each formed of a stent main wire 1 folded into a zigzag shape and joined at its ends, wherein the bending strength of each strut 3 is larger than the bending strength of the stent main wire 1.

Abstract: A stent formed in a shape of a generally tubular body having a central axis. The stent has a spring function with which the tubular body is diameter-contractible toward the central axis, and the tubular body is expandable to an initial diameter after contraction. The stent maintains a configuration curved along a longitudinal direction of the stent when the stent is not inserted in a sheath. The stent is elongated in a form of a generally straight line along the longitudinal direction when the stent is inserted into the sheath. The stent, being housed in a sheath in the form of a generally straight line, is inserted into a diseased part together with the sheath, is released from the sheath, and radially expands, outwardly after release, to restore and maintain a configuration curved along the longitudinal direction of the stent.