Abstract: This substitution site measuring equipment using an electron beam analyzes, with high precision, the structure of a substitution site in a micrometer- to nanometer-order region, by reducing or vanishing the X-ray intensity of diffraction X-rays generated in a specimen. The substitution site measuring equipment measures a substitution site in a crystal by detecting, by means of an X-ray detector, X-rays generated from a specimen upon irradiation of the specimen with an electron beam.

Abstract: This substitution site measuring equipment using an electron beam analyzes, with high precision, the structure of a substitution site in a micrometer- to nanometer-order region, by reducing or vanishing the X-ray intensity of diffraction X-rays generated in a specimen. The substitution site measuring equipment measures a substitution site in a crystal by detecting, by means of an X-ray detector, X-rays generated from a specimen upon irradiation of the specimen with an electron beam.

Abstract: To provide a charged particle beam analyzer enabling an efficient and high-sensitivity analysis of a microscopic light element contained in a heavy metal sample, the charged particle beam analyzer equipped with a WDX spectrometer includes a storage unit 126 having stored therein a correlation database between average atomic numbers and WDX background intensity values obtained with use of a plurality of standard samples and a WDX background processing means 146 including a means 147 for calculating an average atomic number for a sample 129 and a means for eliminating a WDX background intensity value derived from the average atomic number for the sample 129 and the correlation database from a WDX spectrum for the sample 129.

Abstract: To analyze an element to be evaluated with high sensitivity and high accuracy in a short period of time, in an electron beam analyzer including a wavelength dispersive X-ray analyzer in an electron microscope. The electron beam analyzer has one diffraction grating in which a plurality of patterns having maximum X-ray reflectance with respect to the respective X-rays are formed. It simultaneously detects an X-ray as an energy reference and an X-ray spectrum to be evaluated. The positional displacement of X-ray energy due to the installation/replacement of the diffraction grating is corrected using the X-ray spectrum as the energy reference, thereby enabling to perform an analysis with high sensitivity and high accuracy in a short period of time.

Abstract: To provide a charged particle beam analyzer enabling an efficient and high-sensitivity analysis of a microscopic light element contained in a heavy metal sample, the charged particle beam analyzer equipped with a WDX spectrometer includes a storage unit 126 having stored therein a correlation database between average atomic numbers and WDX background intensity values obtained with use of a plurality of standard samples and a WDX background processing means 146 including a means 147 for calculating an average atomic number for a sample 129 and a means for eliminating a WDX background intensity value derived from the average atomic number for the sample 129 and the correlation database from a WDX spectrum for the sample 129.

Abstract: To analyze an element to be evaluated with high sensitivity and high accuracy in a short period of time, in an electron beam analyzer including a wavelength dispersive X-ray analyzer in an electron microscope. The electron beam analyzer has one diffraction grating in which a plurality of patterns having maximum X-ray reflectance with respect to the respective X-rays are formed. It simultaneously detects an X-ray as an energy reference and an X-ray spectrum to be evaluated. The positional displacement of X-ray energy due to the installation/replacement of the diffraction grating is corrected using the X-ray spectrum as the energy reference, thereby enabling to perform an analysis with high sensitivity and high accuracy in a short period of time.

Abstract: In a charged particle beam analyzer irradiating a charged particle beam to a sample in a vacuum container and detecting an X-ray generated from the sample to analyze the sample, two or more X-ray lenses configured in different manners are provided in the vacuum container. This no longer requires air opening in the vacuum container following X-ray lens replacement and also no longer requires vacuuming, making it possible to perform analysis with high efficiency and high sensitivity.

Abstract: In a charged particle beam analyzer irradiating a charged particle beam to a sample in a vacuum container and detecting an X-ray generated from the sample to analyze the sample, two or more X-ray lenses configured in different manners are provided in the vacuum container. This no longer requires air opening in the vacuum container following X-ray lens replacement and also no longer requires vacuuming, making it possible to perform analysis with high efficiency and high sensitivity.

Abstract: An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.

Abstract: An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.

Abstract: An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.

Abstract: An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.