Abstract: A thin-film electroluminescent (EL) display panel comprises a thin-film EL layer, first and second dielectric layers, the thin-film EL layer being disposed between the dielectric layers, first and second metal oxide layers, and first and second electrodes, the first and second metal oxide layers being disposed respectively between the first and second dielectric layers, and the first and second electrodes. Preferably, at least one of the first and second metal oxide layers is made of Al.sub.2 O.sub.3, SiO.sub.2 or the like with a thickness of about 100-800.ANG. and at least one of the dielectric layers being about 1000-3000.ANG..

Abstract: A thin-film electroluminescent (EL) element comprises a thin-film electroluminescent layer, first and second dielectric layers for supporting the element layer, the first dielectric layer being disposed on a smooth surface and the second dielectric layer being disposed on an uneven surface, the thickness of the first dielectric layer being thicker than that of the second dielectric layer such that the dielectric properties of the element are assured, and first and second electrodes provided on the dielectric layers, respectively.

Abstract: A thin electroluminescent (EL) display panel comprises an EL thin film unit for generating an EL light, a pair of glass substrates for sealing the EL thin film unit, a protective liquid within the cavity defined by the glass substrate for protecting the EL thin film unit, a pair of electrodes for conducting electric energy to the EL thin film unit, and a terminal connected to at least one of the pair of electrodes, the terminal comprising a metal such as Al, Al-Ni, Ag-Mn, etc., and the terminal being coupled to a power source.

Abstract: A method for fabricating an indium tin oxide (ITO) film comprises depositing the ITO film on a heat-resisting substrate by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas, and heat-treating the ITO film at about 550-650 degrees Centigrade in an oxygen-free atmosphere. Preferably, the heat-resisting substrate comprises an aluminoborosilicate glass. Further, sputtering, preferably reactive sputtering, is employed.

Abstract: At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas.