Abstract: A method and a system for cleaning a work, the sum A of the areas (mm2), the sum B of the areas (mm2) and the determined supply flow rate Q (L/min) or the supply flow rate Q (L/min) and one or both of the determined sum A of the areas (mm2) and the determined sum B of the areas (mm2) satisfy the predetermined relations.

Abstract: A vapor phase epitaxial growth apparatus, comprising a chamber, to which a wafer is fed; a gas introduction device for introducing a reaction gas into the chamber; a gas flow amount sensor for detecting a flow amount of the reaction gas introduced by the gas introduction device; heaters for heating the wafer fed into the chamber; a heat adjusting device for adjusting heating energy by the heaters; a temperature sensors for detecting a temperature of the wafer fed into the chamber; a control device for receiving as parameters a gas flow amount detected by the gas flow amount sensor and a wafer temperature detected by the temperature sensors, obtaining an optimal value of heating energy for attaining the most uniform epitaxial film based on a predetermined simulation-model, and outputting the same to the heat adjusting device.