Abstract: A stored electric power discharging circuit for an inverter device includes a group of series resistors configured to be connected in parallel to a plurality of main circuit capacitors in a normal operation, a voltage stabilization circuit configured to stabilize interterminal voltages of the respective main circuit capacitor according to a divided voltage of the series resistors during the normal operation, and a control switch having a control input and configured to cut the direct connection between the series resistors at a time of power-off, thereby breaking a voltage stability state of the main circuit capacitors by the voltage stabilization circuit.

Abstract: A stored electric power discharging circuit for an inverter device includes a plurality of series resistors configured to be connected in parallel to a plurality of main circuit capacitors in a normal operation, a voltage stabilization circuit configured to stabilize interterminal voltages of the respective main circuit capacitors according to a divided voltage of the series resistors during the normal operation, and a control switch having a control input and configured to divide energization current supplied to the series resistors at a time of power-off, thereby breaking a voltage stability state of the main circuit capacitors by the voltage stabilization circuit.

Abstract: Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.

Abstract: Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.