Abstract: A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the lead frame (6, 7, 13), semiconductor device (1), and metal block (15) serving as a substrate mounting the semiconductor device (1). The mold resin surrounding the lead frame (6) and semiconductor device (1) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame (6).

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: &thgr;=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &thgr;, the probe have a flat portion at an end of the tip portion.

Abstract: A semiconductor device with a package fixed to a case, comprising: a package where a semiconductor element and a lead terminal connected to the semiconductor element are sealed up; and a case formed by a frame member and an external terminal disposed to the frame member, characterized in that the package is located inside the frame of the case and the lead terminal is connected with the external terminal.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 8t≦r≦23t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface.

Abstract: A probe card 8 for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit 6 to/from bonding pads 7 of the semiconductor integrated circuit. The probes 9 are formed by depositing a conductive film 11 on a surface of a plurality of convex portions formed on a surface of an insulating substrate 10.

Abstract: Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:

Abstract: The present invention provides a member for removing foreign matters adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, the first elastic member formed on the base plates and having a material property of flexible deformation by the contact of the probe, specifically, a predetermined Young's modulus, the second elastic member formed on the first elastic member and having a tensile strength and a film thickness capable of responding to a contact stress produced by the contact of the probe, and an abrasive layer formed on the second elastic member and made of hard particles and a binding material which are mixed at a predetermined volume ratio to realize a smooth sliding action of the probe and producing a high abrasive efficiency of the foreign adhering matters.

Abstract: An apparatus for manufacturing a liquid crystal panel in which two substrates are faced to each other with spacers interposed therebetween, applied with heat pressure in an overlapped condition, and adhesive arranged between the two substrates is cured for fixing, characterized in that at least of a pair of pressurizing plates for applying pressure to the two substrates is a graphite plate and in that upper and lower pressurizing plates are made to be of different rigidity. The graphite plate of low rigidity is made to stick to the substrate, and shifts between substrate can be prevented while securing uniformity in gap between substrates.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface.

Abstract: An apparatus for manufacturing a liquid crystal panel in which two substrates are faced to each other with spacers interposed therebetween, applied with heat and pressure in an overlapped condition, and adhesive arranged between the two substrates is cured for fixing, characterized in that at least one of a pair of pressurizing plates for applying pressure to the two substrates is a graphite plate and in that upper and lower pressurizing plates are made to be of different rigidity. The graphite plate of low rigidity is made to stick to the substrate, and shifts between substrates can be prevented while securing uniformity in gaps between substrates.

Abstract: A probe card 8 for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit 6 to/from bonding pads 7 of the semiconductor integrated circuit. The probes 9 are formed by depositing a conductive film 11 on a surface of a plurality of convex portions formed on a surface of an insulating substrate 10.

Abstract: An apparatus for manufacturing a liquid crystal panel in which two substrates are faced to each other with spacers interposed therebetween, applied with heat and pressure in an overlapped condition, and adhesive arranged between two substrates is cured for fixing, characterized in that at least one of a pair of pressurizing plates for applying pressure to the two substrates is a graphite plate and in that upper and lower pressurizing plates are made to be of different rigidity. The graphite plate of low rigidity is made to stick to the substrate, and shifts between substrates can be prevented while securing uniformity in gaps between substrates.

Abstract: An epitaxial layer is formed on a main surface of a high specific resistance silicon substrate having a specific resistance of at least 100 .OMEGA.cm. A circuit element such as an active element is formed in epitaxial layer. An oxide film is formed such that it covers a surface of epitaxial layer. A metal interconnection layer is formed on a surface of oxide film. An oxide film is formed such that it covers metal interconnection layer. Thus, an inexpensive HF circuit device capable of reducing transmission loss of HF signals can be obtained.

Abstract: A lead frame assembly for a semiconductor device includes a lead frame having a lead frame main body and a first welding region, and a die pad frame having a die pad frame main body, a die pad frame, and a second welding region for welding to the first welding region of said lead frame main body. At least one of the first and second welding regions includes a welding pad for welding to the other welding region and a support bridge connected between the welding pad and a respective frame main body, supporting the welding pad from the respective frame main body, the support bridge including an element for suppressing transmission of at least one of mechanical force, heat, and electrical current.

Abstract: A solder material comprises a first solder plate and a second solder plate having a thickness equal to or larger than 1 micron provided at the both surfaces of the first solder plate comprising material-having a lower melting point than the first solder or material which reacts with the first solder to produce an alloy having a lower melting point than the first solder.A junctioning method comprise putting the above-described solder material inserted between two objects to be junctioned to each other; heating the solder material to a temperature higher than the melting point of the second solder or the alloy and lower than the melting point of said first solder thereby to melt the second solder or the alloy; and thereafter cooling or keeping the solder material at a temperature in the vicinity of the melting point thereby to junction the objects to be junctioned to each other.

Abstract: A method for producing a ceramic-metal composite substrate, which comprises integrally bonding together a ceramic base member, metal members of a material selected from the group consisting of copper and alloys thereof, and a constraining member to be bonded to the metal member, wherein improvement comprises: bringing the metal member into close contact with ceramic base member through a thin film layer having a thickness of from 0.1 .mu.m to 3 .mu.m and containing therein an active metal; and heating the combination of the ceramic base member, the metal member, and the constraining member in an atmosphere which is difficult to react with the active metal, to a temperature ranging from a melting point of an alloy to be formed of the metal member and the active metal to a temperature below the melting point of the metal member, while applying a pressing force to combination in the direction of its thickness, thereby realizing the integral bonding.

Abstract: A ceramic-metal composite substrate which comprises: a ceramic base member; metal members of a material selected from the group consisting of copper and copper alloys, which is bonded to said ceramic base member; and a constraining member bonded to said metal member, said constraining member being made up of a metal selected from the group consisting of molybdenum, tungsten and alloys thereof, and having a thickness in a range of from 1/20 to 1/3 of the thickness of said metal member.