Abstract: A swivel work machine includes a traveling unit, a swivel base plate supported on the traveling unit to be pivotable about a vertical swivel axis, the swivel base plate having a first lateral side and a second lateral side provided across said vertical axis, a pair of upper and lower support brackets disposed at a front end of the swivel base plate with an offset toward the first lateral side and adapted for supporting an implement, a pair of left and right vertical ribs extending rearward from the support brackets and fixed to the swivel base plate and a cabin mounted on the swivel base plate. The cabin is disposed with an offset toward the second lateral side relative to the support brackets, a bottom of the cabin being disposed downwardly of the upper support bracket. The vertical rib disposed on the side of the second lateral side extends, from its front portion to its intermediate portion, parallel with a side face of the cabin on the side of the first lateral side.

Abstract: A swiveling work machine includes a swivel deck mounted to be pivotable about a vertical axis and a side cover for covering one lateral side on the swivel deck, an accommodating space capable of accommodating a work machine accessory being provided inside the lateral cover. The accommodating space accommodates, as the implement accessory, a work oil tank, a fuel tank and a control valve unit. The work oil tank is disposed at a fore-and-aft intermediate portion on one lateral side on the swivel deck. The fuel tank is disposed forwardly of the work oil tank with forming a gap relative thereto. The control valve unit is disposed upwardly of the fuel tank and longitudinally along the fore/aft direction.

Abstract: A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.

Abstract: An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.

Abstract: A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.

Abstract: A surface of a first grid electrode, which is located on a cathode side and is one of a plurality of electrodes for an electron gun used in an electrode gun assembly, is formed to be a rough surface having a higher degree of surface roughness than a surface of a second grid electrode located adjacent to the first grid electrode.

Abstract: It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin.

Abstract: A magnetic memory device in which an MRAM element is magnetically shielded from a large external magnetic field in an satisfactory manner, making it possible to surely achieve an operation free of problems in a magnetic field generated by the environment in which the MRAM element is used. A magnetic random access memory (MRAM) (30) is constituted by a TMR element (10) having a magnetized pinned layer (4), (6) with fixed direction of magnetization and a magnetic layer (memory layer) (2) with changeable direction of magnetization stacked on one another, mounted on a substrate together with another element (38), such as a DRAM, wherein a magnetic shielding layer (33), (34) is formed in a region corresponding to an area occupied by the MRAM element (30) or/and a magnetic shielding layer (33), (34) is with a distance of 15 mm or less between the opposite sides (especially, a length or a width).

Abstract: A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field.

Abstract: In the manufacture of a gas discharge type display panel, by applying a sealing operation along with an exhausting operation, the sealing glass 14 is broken down by a pressure difference between the inside and outside of the panel, and thus, the clearance gap between the substrates can be controlled as desired. In addition, the gaseous component that is unnecessary for the discharge operation is exhausted by setting the temperature of the amorphous sealing glass to exceed its softening-point and be no more than its working point. In the structure of the gas discharge type display panel, a protruding portion having a radius of curvature between 0.1 mm and 1 mm is formed on the sealing glass to reduce the dispersion in the thickness direction of the sealing glass, or the cross-sectional shape of the sealing glass is made convex both at its inside end part and its outside end part.

Abstract: A method of making a small-diameter through hole having high reliability with regard to a hole wall at a high rate with the energy of a high-output carbon dioxide gas laser without pre-making any hole in a copper foil, forming or disposing a coating or a sheet of an organic substance containing 3 to 97% by volume of at least one powder selected from the group consisting of a metal compound powder, a carbon powder and metal powder which have a melting point of at least 900° C.

Abstract: In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).

Abstract: In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to 450° C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability. A compound gas of C and F, e.g., C4F8 gas, a hydrocarbon gas, e.g., C2H4 gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400° C. using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.

Abstract: A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.

Abstract: A method of making a small-diameter through hole having high reliability with regard to a hole wall at a high rate with the energy of a high-output carbon dioxide gas laser without pre-making any hole in a copper foil, forming or disposing a coating or a sheet of an organic substance containing 3 to 97% by volume of at least one powder selected from the group consisting of a metal compound powder, a carbon powder and metal powder which have a melting point of at least 900° C.

Abstract: A surface of a first grid electrode, which is located on a cathode side and is one of a plurality of electrodes for an electron gun used in an electrode gun assembly, is formed to be a rough surface having a higher degree of surface roughness than a surface of a second grid electrode located adjacent to the first grid electrode.

Abstract: A copper-clad board suitable for making a hole with a carbon dioxide gas laser, which copper-clad board is obtained by disposing a double-side-treated copper foil provided with a metallic-treatment layer having a high absorption rate of a carbon dioxide gas laser energy on at least one surface, at least on an outer layer of a thermosetting resin composition layer such that the metallic-treatment layer is formed on a shiny surface of the copper foil which shiny surface is to be a surface layer, and laminate-forming the double-side-treated copper foil and the thermosetting resin composition layer under heat and pressure, to make an alloy of the metallic-treatment layer and the copper by the above heating, a method of making hole in the above copper-clad board and a printed wiring board comprising the above copper-clad board.

Abstract: A method of making a high-density copper-clad multi-layered printed wiring board having a reliable through hole including providing a stacked assembly including three copper foil layers and at least two resin layers; providing an auxiliary material on a top surface of the stacked assembly and providing a backup sheet on a bottom surface of the stacked assembly to form an assembly; subjecting the top surface of the assembly to pulsed oscillation from a carbon dioxide laser to form at least one through-hole to produce a pulsed assembly; reducing the thickness of the front and reverse copper foil layers and simultaneously with reducing, removing copper foil burrs, to produce a cleaned assembly; and plating the cleaned assembly with copper to produce the high-density copper-clad multi-layered printed wiring board.

Abstract: There is disclosed a thinner-layered radio wave absorber having high absorption performance for a high frequency electromagnetic wave. The radio wave absorber, even when having a magnetic layer of not more than 1 mm in thickness, achieves satisfactory absorption characteristics for the high frequency electromagnetic wave by adopting a structure that a conductor is fixedly attached to a face opposite to an electromagnetic-wave incident face of the magnetic layer of single-layered structure, and also arranging the magnetic layer to have values of a real part &mgr;′ and an imaginary part &mgr;″ of complex relative magnetic permeability of the magnetic layer satisfying an expression of &mgr;″≧m&mgr;′−n (m: real number of m>0, n: real number of n≧0) outside an impedance mismatching region.