Abstract: A method of manufacturing a semiconductor device, includes providing a multi-chip interconnection substrate having an upper surface and a lower surface, providing a semiconductor chip having a main surface and a back surface, making the back surface of the semiconductor chip and the upper surface of the multi-chip interconnection substrate face each other and mounting the semiconductor chips in the chip mounting areas of the multi-chip interconnection substrate through a bonding adhesive, coupling the electrode pads formed on the main surface of each of the semiconductor chips with the bonding pads formed on the upper surface of the multi-chip interconnection substrate by the conductive wires respectively, forming a resin sealing body by resin-sealing the semiconductor chips, the conductive wires, and the upper surface of the multi-chip interconnection substrate, and forming a plurality of solder balls to be coupled to a plurality of bump lands formed on the lower surface of the multi-chip interconnection sub

Abstract: A semiconductor device which uses a semiconductor chip originally designed for flip chip bonding and is assembled by a wire bonding process to reduce the cost of assembling a semiconductor product. A second electrode pad group and a fourth electrode pad group are located in the central area of the semiconductor chip and a first electrode pad group and a third electrode pad group are located adjacently to the two long sides of the semiconductor chip. The electrode pads of each electrode group are electrically coupled with a plurality of conductive wires. The layouts of the wiring layers formed in an interconnection substrate are modified so that the wire-bonded semiconductor device is the same as a flip-chip-bonded semiconductor device in terms of the positions of input/output signals.

Abstract: A method of manufacturing a semiconductor device, includes providing a multi-chip interconnection substrate having an upper surface and a lower surface, providing a semiconductor chip having a main surface and a back surface, making the back surface of the semiconductor chip and the upper surface of the multi-chip interconnection substrate face each other and mounting the semiconductor chips in the chip mounting areas of the multi-chip interconnection substrate through a bonding adhesive, coupling the electrode pads formed on the main surface of each of the semiconductor chips with the bonding pads formed on the upper surface of the multi-chip interconnection substrate by the conductive wires respectively, forming a resin sealing body by resin-sealing the semiconductor chips, the conductive wires, and the upper surface of the multi-chip interconnection substrate, and forming a plurality of solder balls to be coupled to a plurality of bump lands formed on the lower surface of the multi-chip interconnection sub

Abstract: A semiconductor device which uses a semiconductor chip originally designed for flip chip bonding and is assembled by a wire bonding process to reduce the cost of assembling a semiconductor product. A second electrode pad group and a fourth electrode pad group are located in the central area of the semiconductor chip and a first electrode pad group and a third electrode pad group are located adjacently to the two long sides of the semiconductor chip. The electrode pads of each electrode group are electrically coupled with a plurality of conductive wires. The layouts of the wiring layers formed in an interconnection substrate are modified so that the wire-bonded semiconductor device is the same as a flip-chip-bonded semiconductor device in terms of the positions of input/output signals.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: The illumination device comprises at least one light source, and a light pipe positioned at the front side of a license plate, and a light diffusing means. A light of the light sources is led, the light pipe emitting a leading light from the surface of the license plate face. The light emitted from the observed face is diffused by the light diffusing means. The light diffusing means is provided with, rugged portions of an observed face opposite to a light emitting face, or, a light diffusing layer composed of two or more kinds of light transmitting materials, refractive indexes of which are different each other, on the observing face, and a light led from a light leading face is reflected and diffused on the light diffusing layer.

Abstract: Before a semiconductor chip (2) is mounted on package board (5), an insulating layer (3) is formed on the reverse side of the semiconductor chip (2) for preventing insulation failures. If the insulating layer (3) is formed by applying an insulating film, then the insulating layer (3) reliably achieves a predetermined thickness for reliable electric insulation and can easily be formed. The semiconductor chip (2) with the insulating layer (3) formed thereon is fixed to the package board (5) which has surface interconnections (7) by an insulating adhesive (adhesive layer 4). The semiconductor chip (2) and the surface interconnections (7) are insulated from each other by the insulating layer (3). Therefore, the adhesive may be used in a minimum quantity. Since the semiconductor chip (2) can be pressed under an increased pressure, the semiconductor chip (2) is reliably joined to the package board (5).

Abstract: The illumination device comprises at least one light source, and a light pipe positioned at the front side of a license plate, and a light diffusing means. A light of the light sources is led, the light pipe emitting a leading light from the surface of the license plate face. The light emitted from the observed face is diffused by the light diffusing means. The light diffusing means is provided with, rugged portions of an observed face opposite to a light emitting face, or, a light diffusing layer composed of two or more kinds of light transmitting materials, refractive indexes of which are different each other, on the observing face, and a light led from a light leading face is reflected and diffused on the light diffusing layer.

Abstract: In a semiconductor device including an interposer substrate, a semiconductor chip, and an adhesive sheet for adhering the semiconductor chip to the interposer substrate, all outer periphery of the adhesive sheet is exposed to the outside.

Abstract: In a semiconductor device in which power is supplied from an external power supply system, a first power supply system is connected to first terminals of power supply and ground and a digital inner circuit. The inner circuit includes a clock signal generating circuit, a driver for the clock signal, and circuits operating in response to the clock signal. A second power supply system is connected to second terminals of power supply and ground, the input terminal, the output terminal, and a digital interface circuit. The second power supply system is independent of the first power supply system. The interface circuit includes a MOS transistor for pulling up or down the input terminal and an output circuit which includes a MOS transistor driving an output terminal. The first power supply system is separated from the second power supply system, and the inner circuit is connected to the interface circuit through only signal lines.

Abstract: Improved speaker independent speech recognition system and method are disclosed in which an utterance by an unspecified person into an electrical signal is input through a device such as a telephone, the electrical signal from the input telephone converting the electrical signal into a time series of characteristic multidimensional vectors, the time series of characteristic multidimensional vectors are received, each of the vectors being converted into a plurality of candidates so that the plurality of phonemes constitutes a plurality of strings of phonemes in time series as a plurality of candidates, the plurality of candidates of phonemes are compared simultaneously (one at a time) with a reference pattern of a reference string of phonemes for each word previously stored in a dictionary to determine which string of phonemes derived from the phoneme recognition means has a highest similarity to one of the reference strings of the phonemes for the respective words stored in the dictionary using a predetermine