Abstract: An X-ray imaging apparatus comprises an X-ray generation unit; a plurality of supporting members configured to support the X-ray generation unit; and an accommodation unit configured to accommodate the X-ray generation unit and the plurality of supporting members, wherein the accommodation unit is formed by bringing a first member and a second member into contact with each other, each of the plurality of supporting members is connected to the first member by a first connecting portion that is rotatable and to the X-ray generation unit by a second connecting portion that is rotatable, and a support height of the X-ray generation unit supported by the supporting members can be adjusted in accordance with a distance between the first member and the second member.

Abstract: In a workpiece surface processing method and a semiconductor thin layer forming method, a reference plane (12) is set in a workpiece, the reference plane (12) is controlled to a desired shape, and then the material constituting the workpiece is removed from the surface of the workpiece (10) toward the reference plane (12) is removed. The surface processing of the workpiece can be performed with high precision while not being dependent on the thickness precision of the workpiece before the surface processing.

Abstract: A wafer bonding device which prevents the substrate from being deformed due to the presence of any particles on the chuck surface is provided to thereby prevent a deterioration in yield in the wafer bonding process. The wafer bonding device is equipped with a substrate holding section 3 having a chuck surface 9 for holding a substrate 1, which is one of two substrates 1 and 2 to be bonded together, and the other substrate 2 is bonded to the substrate 1, which is held by the chuck surface 9, wherein a suction member 8 engaged with a support member 4, forming the substrate holding section 3, is formed of a porous material, whereby minute recesses of a predetermined size are formed in high density on the chuck surface 9 of the substrate holding section 3, and any particles are captured in these minute recesses.