Abstract: The present invention relates to a cyber-physical system for optimizing a simulation model for chemical mechanical polishing based on actual measurement data of chemical mechanical polishing. The chemical mechanical polishing system includes a polishing apparatus (1) for polishing the workpiece (W) and an arithmetic system (47). The arithmetic system (47) includes a simulation model including at least a physical model configured to output an estimated polishing physical quantity including an estimated polishing rate of the workpiece (W). The arithmetic system (47) is configured to: input polishing conditions for the workpiece (W) into the simulation model; output the estimated polishing physical quantity of the workpiece (W) from the simulation model; and determine model parameters of the simulation model that bring the estimated polishing physical quantity closer to a measured polishing physical quantity of the workpiece (W).

Abstract: A polishing pad surface property measuring method which can measure surface properties of a polishing pad that reflect CMP performance by applying a laser beam to the polishing pad at a plurality of incident angles is disclosed. The method includes applying a laser beam to a surface of the polishing pad, and receiving light reflected by the surface of the polishing pad and performing Fourier transform on the received light to determine surface properties of the polishing pad. The laser beam is applied to the polishing pad at a plurality of incident angles.

Abstract: A polishing apparatus having a polishing pad surface property measuring device that is capable of measuring surface properties of a polishing pad in a state where a liquid film exists on the polishing pad is disclosed.

Abstract: A polishing pad surface property measuring method which can measure surface properties of a polishing pad that reflect CMP performance by applying a laser beam to the polishing pad at a plurality of incident angles is disclosed. The method includes applying a laser beam to a surface of the polishing pad, and receiving light reflected by the surface of the polishing pad and performing Fourier transform on the received light to determine surface properties of the polishing pad. The laser beam is applied to the polishing pad at a plurality of incident angles.

Abstract: A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus includes a polishing liquid supply nozzle for supplying a polishing liquid onto the polishing pad, a polishing liquid storage mechanism disposed on the polishing pad for storing the polishing liquid on the polishing pad by damming the polishing liquid, and a polishing liquid sensor for measuring a physical quantity representing the freshness of the polishing liquid stored by the polishing liquid storage mechanism. The polishing apparatus further includes a freshness measuring instrument for calculating the freshness of the stored polishing liquid from the physical quantity measured by the polishing liquid sensor, and a freshness controller for controlling supply conditions of the polishing liquid or storage state of the polishing liquid, based on the freshness of the polishing liquid that is determined by the freshness measuring instrument.

Abstract: A polishing apparatus having a polishing pad surface property measuring device that is capable of measuring surface properties of a polishing pad in a state where a liquid film exists on the polishing pad is disclosed.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus includes a polishing liquid supply nozzle for supplying a polishing liquid onto the polishing pad, a polishing liquid storage mechanism disposed on the polishing pad for storing the polishing liquid on the polishing pad by damming the polishing liquid, and a polishing liquid sensor for measuring a physical quantity representing the freshness of the polishing liquid stored by the polishing liquid storage mechanism. The polishing apparatus further includes a freshness measuring instrument for calculating the freshness of the stored polishing liquid from the physical quantity measured by the polishing liquid sensor, and a freshness controller for controlling supply conditions of the polishing liquid or storage state of the polishing liquid, based on the freshness of the polishing liquid that is determined by the freshness measuring instrument.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: In a mercury-free arc tube, regions including molybdenum foils 17 of electrode assemblies each of which is formed by connecting and integrating an electrode 16, a molybdenum foil 17, and a lead wire 18, are pinch-sealed where the electrode 16 projects inside a closed glass bulb 12, which encloses luminescent substances, etc. The molybdenum foil 17 is doped with or coated with TiO2 in the form of discontinuous lands and subjected to surface roughening by etching including oxidation and reduction. TiO2 particles or a TiO2 layer exposed on the rough surface 17c of the molybdenum foil 17 increases chemical joining strength to glass and makes deeper, more complicated minute unevenness 17b on the molybdenum foil surface to increase the mechanical joining strength to glass, so that even when a heat stress occurs at the interface between the molybdenum foil and glass in the pinch-sealed portion, foil floating does not occur.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus polishes wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) and the wafer held by a holding member (top ring) and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A vehicle discharge lamp is provided with an outer tube, an arc tube disposed within the outer tube, and a pair of electrodes disposed within the arc tube. The arc tube includes a light emitting portion, and a pair of pinch seal portions. Molybdenum foils are sealed in the respective pinch seal portions. Each of the electrodes includes a sealed portion sealed within the pinch seal portion, a projecting portion projecting into the light emitting portion, and a welding portion welded to the molybdenum foil. A concavo-convex part is formed on the sealed portion.

Abstract: A method of dressing a polishing member with a diamond dresser having diamond particles arranged on a surface thereof is provided. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the dressing conditions determined. The simulation includes calculation of the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer W by applying a pressure between a polishing member (polishing pad) 201 and the wafer W held by a holding member (top ring) 52 and relatively moving the polishing member 201 to the wafer W. The polishing apparatus comprises a top ring 52 for holding the wafer W, a pressure adjusting mechanism 206 for adjusting a supporting pressure with which the wafer W is supported on a supporting surface by a retainer ring 203, and a control unit 208 for controlling the pressure adjusting mechanism 206 to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer W. The top ring 52 comprises an air bag 202 for pressing the wafer W against the polishing pad 201, a retainer ring 203 which surrounds the wafer W, and an air bag 204 for pressing the retainer ring 203.

Abstract: In a mercury-free arc tube, regions including molybdenum foils 17 of electrode assemblies each of which is formed by connecting and integrating an electrode 16, a molybdenum foil 17, and a lead wire 18, are pinch-sealed where the electrode 16 projects inside a closed glass bulb 12, which encloses luminescent substances, etc. The molybdenum foil 17 is doped with or coated with TiO2 in the form of discontinuous lands and subjected to surface roughening by etching including oxidation and reduction. TiO2 particles or a TiO2 layer exposed on the rough surface 17c of the molybdenum foil 17 increases chemical joining strength to glass and makes deeper, more complicated minute unevenness 17b on the molybdenum foil surface to increase the mechanical joining strength to glass, so that even when a heat stress occurs at the interface between the molybdenum foil and glass in the pinch-sealed portion, foil floating does not occur.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer W by applying a pressure between a polishing member (polishing pad) 201 and the wafer W held by a holding member (top ring) 52 and relatively moving the polishing member 201 to the wafer W. The polishing apparatus comprises a top ring 52 for holding the wafer W, a pressure adjusting mechanism 206 for adjusting a supporting pressure with which the wafer W is supported on a supporting surface by a retainer ring 203, and a control unit 208 for controlling the pressure adjusting mechanism 206 to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer W. The top ring 52 comprises an air bag 202 for pressing the wafer W against the polishing pad 201, a retainer ring 203 which surrounds the wafer W, and an air bag 204 for pressing the retainer ring 203.