Patents by Inventor Yoshihiro Nishimoto

Yoshihiro Nishimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11932767
    Abstract: To provide an active energy ray-curable ink composition that contains high rates of raw materials derived from biomass and can maintain basic characteristics, such as compatibility. Provided is an active energy ray-curable ink composition containing a pigment, a compound having ethylenically unsaturated bonds, and a rosin-modified alkyd resin, wherein the rosin-modified alkyd resin is a condensed polymer of an acid ingredient containing a resin acid, a fatty acid, and a polybasic acid with a polyhydric alcohol, and has a solubility parameter (sp) value of 9.0 to 11.0 (cal/cm3)1/2 as measured by turbidimetric titration and an acid value of 1 to 50 mg KOH/g.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: March 19, 2024
    Assignee: SAKATA INX CORPORATION
    Inventors: Keishiro Hishinuma, Naoki Omi, Yoshihiro Hisanaga, Aika Nishimoto
  • Patent number: 6045860
    Abstract: A process for manufacturing a copper tube with a tinned inner surface by circulating a substitution-type electroless tin plating solution inside the copper tube. The process is characterized by comprising a first plating step wherein the rate of deposition of a tin film is adjusted so that the total copper ion concentration in the plating solution, immediately after flowing from the copper tube, after having been circulated inside the tube divided by the tin (II) ion concentration in this plating solution is 0.8 or less, and a second plating step wherein plating is carried out at a plating solution temperature higher than the plating solution temperature in the first plating step. A plating solution comprising 0.05-0.3 mol/l of Sn.sup.2 ion, 0.5-2.0 mol/l of thiourea, 0.5-2.0 mol/l of sulfuric acid, 0.05-2.0 mol/l of alkyl benzene sulfonic acid, and 0.5-5.0 g/l of a nonionic surface active agent is preferably used.
    Type: Grant
    Filed: January 16, 1998
    Date of Patent: April 4, 2000
    Assignee: Sumitomo Light Metal Industries, Ltd.
    Inventors: Junichi Ito, Tetsuro Atsumi, Makoto Yonemitsu, Yoshihiro Nishimoto, Hiroshi Okamura
  • Patent number: 5455182
    Abstract: A thin film transistor which includes a first insulating layer, a silicon channel layer formed on the first insulating layer, and a second insulating layer formed on the silicon channel layer, and a passivation layer formed on the first insulating layer and formed successive to and covering the side face of the channel layer between the first and second insulating layers.
    Type: Grant
    Filed: May 18, 1993
    Date of Patent: October 3, 1995
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Nishimoto, Yoshifumi Kishida