Patents by Inventor Yoshihiro Nishiyana

Yoshihiro Nishiyana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer
    Patent number: 8054588
    Abstract: A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: November 8, 2011
    Assignee: Alps Electric Co., Ltd.
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Yosuke Ide, Hasahiko Ishizone, Masamichi Saito, Naoya Hasegawa, Yoshihiro Nishiyana, Akio Hanada, Hidekezu Kobayashi
  • TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER
    Publication number: 20110129690
    Abstract: A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.
    Type: Application
    Filed: February 11, 2011
    Publication date: June 2, 2011
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Yosuke Ide, Hasahiko Ishizone, Masamichi Saito, Naoya Hasegawa, Yoshihiro Nishiyana, Akio Hanada, Hidekezu Kobayashi