Patents by Inventor Yoshihiro OSHIRO

Yoshihiro OSHIRO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of monocrystalline silicon and monocrystalline silicon
    Patent number: 10490398
    Abstract: A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: November 26, 2019
    Assignee: SUMCO CORPORATION
    Inventors: Tsuyoshi Nakamura, Eiichi Kawasaki, Shogo Kobayashi, Yoshihiro Oshiro
  • MANUFACTURING METHOD OF MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE SILICON
    Publication number: 20170338098
    Abstract: A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.
    Type: Application
    Filed: May 15, 2017
    Publication date: November 23, 2017
    Applicant: SUMCO CORPORATION
    Inventors: Tsuyoshi NAKAMURA, Eiichi KAWASAKI, Shogo KOBAYASHI, Yoshihiro OSHIRO