Abstract: An information processing device includes one or more processors. The one or more processors are configured to optimize, for a specific elementary reaction in a reaction using a catalyst including a plurality of elementary reactions, an arrangement of a promoter element in the catalyst based on activation energy acquired using a trained model, and search for the promoter element based on the activation energy acquired using the trained model for each type of the promoter element.

Abstract: A method for forming a coating that is less uneven and more uniform, and has good stability after being formed, by applying a coating-forming composition including a metal compound and/or a halogen-containing compound. The coating is formed by a method including forming a coating by applying a coating-forming composition onto a substrate. The coating-forming composition is a solution including a metal compound and/or a halogen-containing compound, and an amine compound. The metal compound includes one or more metal elements selected from period 2 elements to period 6 elements in the periodic table.

Abstract: A diffusing agent composition that can form a coating film in which the unevenness thereof is lowered, which is uniform and which has excellent stability, and a method of manufacturing a semiconductor substrate in which an impurity diffusing component is diffused into the semiconductor substrate from the coating film formed of the diffusing agent composition. An aliphatic amine which satisfies predetermined conditions is contained as an aliphatic amine compound in a diffusing agent composition including an impurity diffusing component. When the number of primary amino groups included in the amine compound is NA, the number of secondary amino groups included in the compound is NB, and the number of tertiary amino groups included in the amine compound is NC, NA, NB and NC satisfy predetermined formulas.

Abstract: A diffusing agent composition that can form a coating film in which the unevenness thereof is lowered, which is uniform and which has excellent stability, and a method of manufacturing a semiconductor substrate in which an impurity diffusing component is diffused into the semiconductor substrate from the coating film formed of the diffusing agent composition. An aliphatic amine which satisfies predetermined conditions is contained as an aliphatic amine compound in a diffusing agent composition including an impurity diffusing component. When the number of primary amino groups included in the amine compound is NA, the number of secondary amino groups included in the compound is NB, and the number of tertiary amino groups included in the amine compound is NC, NA, NB and NC satisfy predetermined formulas.

Abstract: A method for forming a coating that is less uneven and more uniform, and has good stability after being formed, by applying a coating-forming composition including a metal compound and/or a halogen-containing compound. The coating is formed by a method including forming a coating by applying a coating-forming composition onto a substrate. The coating-forming composition is a solution including a metal compound and/or a halogen-containing compound, and an amine compound. The metal compound includes one or more metal elements selected from period 2 elements to period 6 elements in the periodic table.

Abstract: To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane.

Abstract: A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.

Abstract: A diffusion agent composition that, even when a semiconductor substrate which is an object into which an impurity diffusion ingredient is to be diffused has, on a surface thereof, a three-dimensional structure having nano-scale fine voids on a surface thereof, can be evenly coated on the whole area of an inner surface of the fine voids, whereby boron can be diffused into the semiconductor substrate, and a method for manufacturing a semiconductor substrate using the composition. The composition includes an impurity diffusion ingredient and a hydrolyzable Si compound to produce a silanol group, the impurity diffusion ingredient containing a complex compound containing boron having a specific structure.

Abstract: A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.

Abstract: A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.

Abstract: To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane.

Abstract: A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.

Abstract: An antenna device includes: a ground electrode; a first dielectric layer which is provided on one surface of the ground electrode; a feed plate which is provided on a surface of the first dielectric layer opposite from the ground electrode, and which is shorted to the ground electrode; a feed line which feeds to the feed plate; a second dielectric layer which is provided in such a manner as to sandwich the feed plate in combination with the first dielectric layer; and a radiation electrode which is provided on a surface of the second dielectric layer opposite from the feed plate, and which is fed by being electrically connected to the feed plate at a feed point and thereby radiates or receives a radiowave with a first frequency.

Abstract: A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group.

Abstract: A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group.

Abstract: A diffusion agent composition that, even when a semiconductor substrate which is an object into which an impurity diffusion ingredient is to be diffused has, on a surface thereof, a three-dimensional structure having nano-scale fine voids on a surface thereof, can be evenly coated on the whole area of an inner surface of the fine voids, whereby boron can be diffused into the semiconductor substrate, and a method for manufacturing a semiconductor substrate using the composition. The composition includes an impurity diffusion ingredient and a hydrolyzable Si compound to produce a silanol group, the impurity diffusion ingredient containing a complex compound containing boron having a specific structure.

Abstract: A via adding method comprising: identifying a target area where a via is to be added in a printed circuit board; determining a starting point for starting a search for a location of the via in the target area; and moving a search point along a path in an intersecting direction that intersects a radial direction around the starting point while moving the search point in the radial direction and determining whether the via is to be added at a moved search point.

Abstract: A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.

Abstract: A non-transitory recording medium storing a program that causes a computer to execute a circuit board design assistance process. The circuit board design assistance process includes: extracting, from design information of a multilayer circuit board in which a plurality of layers are layered, a plurality of ground patterns in the multilayer circuit board that are within a predetermined distance from a path of a signal that flows in the multilayer circuit board; resolving a region at which the plurality of ground patterns are electronically separated as being a discontinuity region; and displaying the resolved discontinuity region.

Abstract: A diffusion agent composition that, even when coated on a semiconductor substrate in a nano-scale thickness, allows an impurity diffusion component to be well diffused into the semiconductor substrate. The diffusion agent composition includes an impurity diffusion component and a silicon compound represented by R4-nSi(NCO)n in which R represents a hydrocarbon group and n is an integer of 3 or 4, the silicon compound is capable of being hydrolyzed to produce a silanol group, and the water content of the diffusion agent composition is not more than 0.05% by mass.