Patents by Inventor Yoshihiro Sawada

Yoshihiro Sawada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200369914
    Abstract: A method for forming a coating that is less uneven and more uniform, and has good stability after being formed, by applying a coating-forming composition including a metal compound and/or a halogen-containing compound. The coating is formed by a method including forming a coating by applying a coating-forming composition onto a substrate. The coating-forming composition is a solution including a metal compound and/or a halogen-containing compound, and an amine compound. The metal compound includes one or more metal elements selected from period 2 elements to period 6 elements in the periodic table.
    Type: Application
    Filed: May 12, 2020
    Publication date: November 26, 2020
    Inventors: Shunichi MASHITA, Yoshihiro SAWADA
  • Publication number: 20200373162
    Abstract: A diffusing agent composition that can form a coating film in which the unevenness thereof is lowered, which is uniform and which has excellent stability, and a method of manufacturing a semiconductor substrate in which an impurity diffusing component is diffused into the semiconductor substrate from the coating film formed of the diffusing agent composition. An aliphatic amine which satisfies predetermined conditions is contained as an aliphatic amine compound in a diffusing agent composition including an impurity diffusing component. When the number of primary amino groups included in the amine compound is NA, the number of secondary amino groups included in the compound is NB, and the number of tertiary amino groups included in the amine compound is NC, NA, NB and NC satisfy predetermined formulas.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Inventors: Keisuke KUBO, Yoshihiro SAWADA, Shunichi MASHITA
  • Patent number: 10525418
    Abstract: To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: January 7, 2020
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshihiro Sawada, Tsukasa Sugawara
  • Patent number: 10504732
    Abstract: A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: December 10, 2019
    Assignee: TOKYO OHKA KOGYO CO, LTD.
    Inventors: Yoshihiro Sawada, Yu Takahashi
  • Patent number: 10242874
    Abstract: A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: March 26, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventor: Yoshihiro Sawada
  • Patent number: 10242875
    Abstract: A diffusion agent composition that, even when a semiconductor substrate which is an object into which an impurity diffusion ingredient is to be diffused has, on a surface thereof, a three-dimensional structure having nano-scale fine voids on a surface thereof, can be evenly coated on the whole area of an inner surface of the fine voids, whereby boron can be diffused into the semiconductor substrate, and a method for manufacturing a semiconductor substrate using the composition. The composition includes an impurity diffusion ingredient and a hydrolyzable Si compound to produce a silanol group, the impurity diffusion ingredient containing a complex compound containing boron having a specific structure.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: March 26, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshihiro Sawada, Yu Takahashi, Takuya Ohhashi
  • Publication number: 20180374704
    Abstract: A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 27, 2018
    Inventor: Yoshihiro SAWADA
  • Publication number: 20180311622
    Abstract: To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane.
    Type: Application
    Filed: October 28, 2016
    Publication date: November 1, 2018
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoshihiro SAWADA, Tsukasa SUGAWARA
  • Publication number: 20180182624
    Abstract: A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.
    Type: Application
    Filed: December 18, 2017
    Publication date: June 28, 2018
    Inventors: Yoshihiro SAWADA, Yu TAKAHASHI
  • Patent number: 9905917
    Abstract: An antenna device includes: a ground electrode; a first dielectric layer which is provided on one surface of the ground electrode; a feed plate which is provided on a surface of the first dielectric layer opposite from the ground electrode, and which is shorted to the ground electrode; a feed line which feeds to the feed plate; a second dielectric layer which is provided in such a manner as to sandwich the feed plate in combination with the first dielectric layer; and a radiation electrode which is provided on a surface of the second dielectric layer opposite from the feed plate, and which is fed by being electrically connected to the feed plate at a feed point and thereby radiates or receives a radiowave with a first frequency.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: February 27, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Yohei Koga, Hiroyuki Egawa, Yoshihiro Sawada, Naozumi Anzai, Kazutoshi Taniyama, Michihiro Konishi
  • Patent number: 9831086
    Abstract: A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: November 28, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshihiro Sawada, Yu Takahashi
  • Publication number: 20170287714
    Abstract: A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group.
    Type: Application
    Filed: March 24, 2017
    Publication date: October 5, 2017
    Inventors: Yoshihiro SAWADA, Yu TAKAHASHI
  • Publication number: 20170278711
    Abstract: A diffusion agent composition that, even when a semiconductor substrate which is an object into which an impurity diffusion ingredient is to be diffused has, on a surface thereof, a three-dimensional structure having nano-scale fine voids on a surface thereof, can be evenly coated on the whole area of an inner surface of the fine voids, whereby boron can be diffused into the semiconductor substrate, and a method for manufacturing a semiconductor substrate using the composition. The composition includes an impurity diffusion ingredient and a hydrolyzable Si compound to produce a silanol group, the impurity diffusion ingredient containing a complex compound containing boron having a specific structure.
    Type: Application
    Filed: March 23, 2017
    Publication date: September 28, 2017
    Inventors: Yoshihiro SAWADA, Yu TAKAHASHI, Takuya OHHASHI
  • Patent number: 9713262
    Abstract: A via adding method comprising: identifying a target area where a via is to be added in a printed circuit board; determining a starting point for starting a search for a location of the via in the target area; and moving a search point along a path in an intersecting direction that intersects a radial direction around the starting point while moving the search point in the radial direction and determining whether the via is to be added at a moved search point.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: July 18, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Kenji Nagase, Yoshiaki Hiratsuka, Tomoyuki Nakao, Yoshihiro Sawada, Keisuke Nakamura
  • Patent number: 9620354
    Abstract: A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: April 11, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventor: Yoshihiro Sawada
  • Patent number: 9507905
    Abstract: A non-transitory recording medium storing a program that causes a computer to execute a circuit board design assistance process. The circuit board design assistance process includes: extracting, from design information of a multilayer circuit board in which a plurality of layers are layered, a plurality of ground patterns in the multilayer circuit board that are within a predetermined distance from a path of a signal that flows in the multilayer circuit board; resolving a region at which the plurality of ground patterns are electronically separated as being a discontinuity region; and displaying the resolved discontinuity region.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: November 29, 2016
    Assignee: FUJITSU LIMITED
    Inventors: Yoshiaki Hiratsuka, Kenji Nagase, Tomoyuki Nakao, Yoshihiro Sawada, Keisuke Nakamura
  • Publication number: 20160314975
    Abstract: A diffusion agent composition that, even when coated on a semiconductor substrate in a nano-scale thickness, allows an impurity diffusion component to be well diffused into the semiconductor substrate. The diffusion agent composition includes an impurity diffusion component and a silicon compound represented by R4-nSi(NCO)n in which R represents a hydrocarbon group and n is an integer of 3 or 4, the silicon compound is capable of being hydrolyzed to produce a silanol group, and the water content of the diffusion agent composition is not more than 0.05% by mass.
    Type: Application
    Filed: April 18, 2016
    Publication date: October 27, 2016
    Inventor: Yoshihiro SAWADA
  • Publication number: 20160293425
    Abstract: A method for manufacturing a semiconductor substrate, including coating a diffusion agent composition containing an impurity diffusion ingredient on a semiconductor substrate, followed by heating the formed coating film to diffuse the impurity diffusion ingredient in the semiconductor substrate, so that the impurity diffusion ingredient can be well diffused into the semiconductor substrate by the coating of the diffusion agent composition in a nano-scale thickness and heat treatment for a short period of time. When a composition comprising an impurity diffusion ingredient and a silicon compound of a predetermined structure containing an isocyanate group as the diffusion agent composition is used, the diffusion agent composition is coated on the semiconductor substrate in a thickness of not more than 30 nm and the coating film of the diffusion agent composition is heated by a predetermined method for a short period of time.
    Type: Application
    Filed: March 30, 2016
    Publication date: October 6, 2016
    Inventor: Yoshihiro SAWADA
  • Publication number: 20160181691
    Abstract: An antenna device includes: a ground electrode; a first dielectric layer which is provided on one surface of the ground electrode; a feed plate which is provided on a surface of the first dielectric layer opposite from the ground electrode, and which is shorted to the ground electrode; a feed line which feeds to the feed plate; a second dielectric layer which is provided in such a manner as to sandwich the feed plate in combination with the first dielectric layer; and a radiation electrode which is provided on a surface of the second dielectric layer opposite from the feed plate, and which is fed by being electrically connected to the feed plate at a feed point and thereby radiates or receives a radiowave with a first frequency.
    Type: Application
    Filed: February 26, 2016
    Publication date: June 23, 2016
    Applicant: FUJITSU LIMITED
    Inventors: Yohei Koga, HIROYUKI EGAWA, Yoshihiro SAWADA, Naozumi Anzai, Kazutoshi Taniyama, Michihiro Konishi
  • Publication number: 20160099149
    Abstract: A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventor: Yoshihiro SAWADA