Patents by Inventor Yoshihiro SOBUE

Yoshihiro SOBUE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 10056315
    Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first conductor, a first conductive layer, a first insulating layer, a second conductive layer, and a plurality of second conductors. The semiconductor layer has a first region and a second region. The first conductor is provided in the semiconductor layer. The first conductive layer is electrically connected to the first conductor. The first insulating layer is provided in the semiconductor layer with at least part of the first insulating layer being provided between the first conductive layer and the semiconductor layer. A distance from the first insulating layer to the first region is smaller than a distance to the second region. A first distance to the first region from a plane that includes a first interface between the first insulating layer and the first conductive layer is larger than a second distance from the plane to the second region.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: August 21, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masayuki Akou, Hiromasa Yoshimori, Yoshihiro Sobue
  • SEMICONDUCTOR DEVICE
    Publication number: 20180068928
    Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first conductor, a first conductive layer, a first insulating layer, a second conductive layer, and a plurality of second conductors. The semiconductor layer has a first region and a second region. The first conductor is provided in the semiconductor layer. The first conductive layer is electrically connected to the first conductor. The first insulating layer is provided in the semiconductor layer with at least part of the first insulating layer being provided between the first conductive layer and the semiconductor layer. A distance from the first insulating layer to the first region is smaller than a distance to the second region. A first distance to the first region from a plane that includes a first interface between the first insulating layer and the first conductive layer is larger than a second distance from the plane to the second region.
    Type: Application
    Filed: March 6, 2017
    Publication date: March 8, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Masayuki AKOU, Hiromasa YOSHIMORI, Yoshihiro SOBUE