Abstract: The toner contains binder resin-containing toner particles and silica fine particle S1, wherein the weight-average particle diameter of the toner is 4.0-15.0 ?m, both inclusive, peaks originating with the silica fine particle S1 are observed in 29 Si-NMR measurement of the silica fine particle S1, and, in the spectrum obtained by 29Si CP/MAS NMR or 29Si DD/MAS NMR, the peak area of a peak corresponding to the D1 unit structure in the silica fine particle S1, the peak area of a peak corresponding to the D2 unit structure in the silica fine particle S1, and the peak area of a peak corresponding to the Q unit structure in the silica fine particle S1 satisfy a prescribed relationship.

Abstract: An abnormality detection system according to an embodiment has an acquisition unit that acquires information that indicates a tendency of a usage state of one use item that is provided as an item for use that is executed by a user of a toilet, and a determination unit that determines that an abnormality concerning the one use item occurs in a case where a tendency of the usage state of the one use item is separated from a use tendency of the one use item in past.

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Abstract: A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (14b). Furthermore, a polysilicon film (15) is formed on the insulating film (14b). After that, the SiO2 film (14a) and the insulating film (14b) are allowed to react with each other by performing a heat treatment, for example, at approximately 1000° C. to form a silicate film containing the rare earth metal and Al. In a word, the SiO2 film (14a) and the insulating film (14b) are allowed to be a single silicate film.

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Abstract: An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

Abstract: A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (14b). Furthermore, a polysilicon film (15) is formed on the insulating film (14b). After that, the SiO2 film (14a) and the insulating film (14b) are allowed to react with each other by performing a heat treatment, for example, at approximately 1000° C. to form a silicate film containing the rare earth metal and Al. In a word, the SiO2 film (14a) and the insulating film (14b) are allowed to be a single silicate film.

Abstract: A method of forming a high-K dielectric film by the MOCVD method using an amine-based organic metal compound precursor is disclosed. According to the present method, a precursor gas including organic metal compound molecules of the amine-based organic metal compound precursor is supplied to a processing space that accommodates a substrate to be processed, the surface of the substrate being exposed so that the amine-base organic metal compound molecules are chemically adsorbed onto the surface of the substrate. Then, a hydrogen gas is supplied to the surface of the substrate, and an oxidization gas is introduced into the processing space to thereby form the high-K dielectric film on the surface of the substrate.

Abstract: An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.

Abstract: This invention provides a process for electroless copper plating without using formaldehyde and an electroless copper plating solution which is used in the process. To this end, there is disclosed a process for electroless copper plating, which treatment comprises depositing a palladium or palladium-tin catalyst on a resin substrate, and then treating said resin substrate having the catalyst deposited thereon with a formaldehyde-free electroless copper plating solution that contains copper ions and a reducing agent, wherein the need for an accelerating treatment of a catalyst after said catalyst depositing treatment is obviated. The productivity of a copper-resin composite material is dramatically enhanced by the process of the present invention, because a copper thin layer can be formed on the resin substrate in a short time, even if an accelerating treatment for a catalyst is not performed in a separate process.

Abstract: A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

Abstract: A method for forming copper-resin composite materials is disclosed. This method affixes a palladium or palladium-tin catalyst onto resin substrate, and then subjects the catalyst-containing resin to an electroless copper plating bath without performing a catalyst acceleration treatment step.

Abstract: An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

Abstract: A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

Abstract: A method for forming copper-resin composite materials is disclosed. This method affixes a palladium or palladium-tin catalyst onto resin substrate, and then subjects the catalyst-containing resin to an electroless copper plating bath without performing a catalyst acceleration treatment step.

Abstract: A method includes the steps of forming a gate insulating film on a monocrystalline silicon substrate, forming a conductive film on the gate insulating film, and processing at least the conductive film to form a gate electrode. The gate insulating film is made up from an aluminum oxide film about 1 nm thick deposited on the monocrystalline silicon substrate by CVD, a hafnium oxide film about 4 nm thick deposited on the aluminum oxide film by CVD, and another aluminum oxide film about 1 nm thick deposited on the hafnium oxide film by CVD under the same formation conditions as the former aluminum oxide film.

Abstract: An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.

Abstract: A surface-mountable composite electronic part comprising a capacitor element which includes a dielectric ceramic member and a film resistor combined therewith for forming an RC circuit. A plurality of external terminals are formed on both end surfaces of the capacitor element for extracting capacitance, while a plurality of wiring patterns are formed on a first major surface of the capacitor element to be connected with the external terminals. The film resistor is formed on the first major surface of the capacitor element on a protective film made of a glass material, and connects a pair of the wiring patterns with each other. When the film resistor is trimmed with a laser beam, the protective film prevents the dielectric ceramic member forming the capacitor element from being harmed by the laser beam.