Abstract: A plasma processing apparatus includes a plasma processing chamber; a base; an electrostatic chuck; a plurality of electrode layers disposed in the same plane within the electrostatic chuck; a switch group including a plurality of first switches electrically connected to the electrode layers, respectively; a power supply and a measurement unit that are electrically connected to the switch group; a second switch that selects either the power supply or the measurement unit as a connection destination of the switch group; and a controller. The power supply includes a power source that supplies a power to the electrode layers. The measurement unit includes a resistor and a voltmeter that measures a voltage applied to the resistor. The controller is capable of executing a control operation that includes switching the connection destination of the switch group to the measurement unit and then turning ON the plurality of first switches one by one.

Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.

Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.

Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.

Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.

Abstract: A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.

Abstract: In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.

Abstract: Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of charges electrified on a plasma-processed processing-object substrate and preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.

Abstract: Provided is a plasma processing apparatus, which is loaded with a substrate to be processed on the voltage-applied electrode side and is able to achieve a uniform plasma processing characteristic on a substrate surface by correcting the distortion of an electric field in the edge portion and the distortion of plasma. There is provided a plasma processing apparatus, which introduces a processing gas into a processing chamber and excites a plasma in the processing chamber to carry out plasma processing on a substrate to be processed placed on a cathode electrode inside the processing chamber, the apparatus being provided with a ring that encompasses the outer peripheral edge portion of the substrate and has a clearance between its encompassing surface and the upper surface and the outer peripheral edge of the substrate.

Abstract: In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.

Abstract: A plasma processing method and apparatus, wherein evaluation is effected while a suitable gas is introduced into a vacuum vessel, and then a high frequency voltage is applied by a high frequency discharge coil power source to a spiral discharge coil while the interior of the vacuum vessel is kept under adequate pressure, whereby a high frequency magnetic field is generated within the vacuum vessel through a dielectric plate so that electrons are accelerated by an induction field due to the high frequency magnetic field to generate plasma within the vacuum vessel for processing a substrate, characterized in that the dielectric plate is heated by a planar heater to 80.degree. C. or more, whereby the thickness of a thin film to be deposited on the dielectric plate is substantially reduced thereby to inhibit dust generation and thus substantially reduce the frequency of maintenance required for the dielectric plate.

Abstract: In a plasma processing method, a substrate is processed by placing the substrate on an electrode in a vacuum chamber, introducing a gas into the vacuum chamber while discharging gas from inside vacuum chamber, applying a high frequency voltage to a spiral discharge coil while keeping the vacuum chamber internally at a pressure to generate a plasma inside the vacuum chamber. At least one of the control parameters of gas type, gas flow rate, pressure, magnitudes of high frequency powers applied to the coil and the electrode, and their high frequency power frequencies is varied while the substrate is processed. The method includes a step of allowing a plasma density in-plane distribution to be controlled in accordance with the timing of varying any of the control parameters.

Abstract: A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.

Abstract: A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.