Abstract: The present invention relates to a process for producing lithium iron phosphate particles, wherein the process has a step of obtaining a melt containing, as represented by mol % based on oxides, from 1 to 50% of Li2O, from 20 to 50% of Fe2O3 and from 30 to 60% of P2O5; a step of cooling and solidifying the melt; a step of pulverizing the solidified product into a desired particle shape; and a step of heating the pulverized product in the air or under oxidizing conditions (0.21<oxygen partial pressure<1.0) at from 350 to 800° C. to precipitate crystals of LinFe2(PO4)3 (0<n<3), in this order.

Abstract: Solid particles of a compound (Y) having a composition represented by AxMyP3Oz (wherein the element A is at least one member selected from the group consisting of Li and Na, the element M is at least one member selected from the group consisting of Fe, Mn, Co and Ni, the valency N of the element M satisfies +2<N?+4, 0<x<4, and 0<y<3) and a compound (Z) containing the element M are blended to achieve a composition of AaMbPOw (wherein 0<a<2 and 0.8<b<1.2), the blended product is mixed while it is pulverized, and heated in an inert gas or in a reducing gas to obtain particles of a phosphate compound (X) having a composition represented by AaMbPOw (wherein A derives from the compound (Y), and M derives from the compounds (Y) and (Z)), by a solid phase reaction.

Abstract: A process for producing a positive electrode material for a secondary cell, by melting a material containing from 5 to 40 mol % of A2O, wherein A is at least one of Li and Na, from 40 to 70 mol % of MO, wherein M is at least one of Fe, Mn, Co, and Ni, and from 15 to 40 mol % of P2O5, to obtain a molten material; cooling the molten material, to obtain a solidified material; mixing and pulverizing the solidified material with an organic compound, a carbon powder, or both; and heating the pulverized material to precipitate a crystal containing an olivine-type AMPO4 and to bind the organic compound, the carbon powder, a reaction product, or a mixture thereof to the crystal surface, wherein the melting and the heating are carried out under an inert or reducing condition.

Abstract: To provide a process for producing ceria-zirconia solid solution crystal fine particles having high crystallinity, being excellent in uniformity of composition and particle size, having a small particle size and a high specific surface area and being excellent in heat resistance, and such solid solution crystal fine particles. A process comprises a step of obtaining a melt containing, as represented by mol % based on oxides, from 5 to 50% of (ZrO2+CeO2), from 10 to 60% of RO (wherein R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba) and from 25 to 70% of B2O3, a step of quenching the melt to obtain an amorphous material, a step of heating the amorphous material at a temperature of from 550 to 1000° C.

Abstract: For production of NASICON type lithium iron phosphate particles, it is desired to increase the uniformity of the particle size and the chemical composition and further to improve the crystallinity. A process for producing lithium iron phosphate particles, which comprises a step of obtaining a melt containing, as represented by mol % based on oxides, from 1 to 50% of Li2O, from 20 to 50% of Fe2O3 and from 30 to 60% of P2O5; a step of cooling and solidifying the melt; a step of pulverizing the solidified product into a desired particle shape, and a step of heating the pulverized product in the air or under oxidizing conditions (0.21<oxygen partial pressure?1.0) at from 350 to 800° C. to precipitate crystals of LinFe2(PO4)3 (0<n?3), in this order.

Abstract: Provided is a process for readily producing fine particles of a solid solution having a small particle size, comprising a solid solution of zirconia, ceria and a rare earth oxide in a desired composition, and being highly crystalline. The process for producing the fine particles of the solid solution comprises the following steps in the order named: obtaining a melt comprising, in terms of mol % on an oxide basis, from 5 to 50% ZrO2, CeO2 and RE2O3 (where RE is at least one member selected from rare earth elements other than Ce) in total, from 10 to 50% RO (where R is at least one member selected from the group consisting of Mg, Ca, Sr, Ba and Zn), and from 30 to 75% B2O3; quenching the melt to obtain an amorphous material; heating the amorphous material to obtain precipitates containing crystals of a solid solution with ZrO2, CeO2 and RE2O3; and separating the crystals of the solid solution from the precipitates to obtain fine particles of the solid solution.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.

Abstract: To provide a process for producing ceria-zirconia solid solution crystal fine particles having high crystallinity, being excellent in uniformity of composition and particle size, having a small particle size and a high specific surface area and being excellent in heat resistance, and such solid solution crystal fine particles. A process comprises a step of obtaining a melt containing, as represented by mol % based on oxides, from 5 to 50% of (ZrO2+CeO2), from 10 to 60% of RO (wherein R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba) and from 25 to 70% of B2O3, a step of quenching the melt to obtain an amorphous material, a step of heating the amorphous material at a temperature of from 550 to 1000° C.

Abstract: The present invention provides a process for producing a polishing slurry, which achieves high-speed polishing of a principal plane of a glass substrate even when ceria crystal fine particles or ceria-zirconia solid solution crystal fine particles are employed. A process for producing a polishing slurry having a pH of from 2 to 7, comprising preparing a polishing slurry liquid containing abrasive particles, a dispersing agent and water, wherein the abrasive particles comprise ceria particles or ceria-zirconia solid solution particles and the dispersing agent comprises 2-pyridine carboxylic acid or glutamic acid; dispersing the abrasive particles of the polishing slurry liquid so that the reduction ratio of the crystallite diameter of the abrasive particles becomes at most 10%; subsequently adding water; and adding the same dispersing agent as the above dispersing agent.

Abstract: To provide a process for producing fine particles of crystalline oxide which have high crystallinity, are excellent in uniformity of the composition and particle diameter, and have a small particle diameter, and such fine particles of crystalline oxide. A process for producing fine particles of crystalline oxide, which comprises: a step of obtaining a melt containing an oxide of M (M is at least one member selected from the group consisting of Ce, Ti, Zr, Al, Fe, Zn, Mn, Cu, Co, Ni, Bi, Pb, In, Sn and rare earth elements (excluding Ce)) and B2O3, a step of rapidly cooling the melt to form an amorphous material, a step of pulverizing the amorphous material to obtain a pulverized material having a volume-based particle size distribution within a range of from 0.

Abstract: Provided is a process for readily producing fine particles of a solid solution having a small particle size, comprising a solid solution of zirconia, ceria and a rare earth oxide in a desired composition, and being highly crystalline. The process for producing the fine particles of the solid solution comprises the following steps in the order named: obtaining a melt comprising, in terms of mol % on an oxide basis, from 5 to 50% ZrO2, CeO2 and RE2O3 (where RE is at least one member selected from rare earth elements other than Ce) in total, from 10 to 50% RO (where R is at least one member selected from the group consisting of Mg, Ca, Sr, Ba and Zn), and from 30 to 75% B2O3; quenching the melt to obtain an amorphous material; heating the amorphous material to obtain precipitates containing crystals of a solid solution with ZrO2, CeO2 and RE2O3; and separating the crystals of the solid solution from the precipitates to obtain fine particles of the solid solution.

Abstract: To provide a slurry for polishing which is excellent in polishing properties, can suppress scratches and is appropriate for accurate polishing in semiconductor production steps, and fine particles of oxide crystal for it. Fine particles of oxide crystal, characterized in that the ratio of the crystallite size measured by X-ray diffraction method and calculated by Scherrer method to the average primary particle size equivalent to sphere from the specific surface area measured by BET is the crystallite size: the average primary particle size=1:0.8 to 1:2.5. A slurry for polishing, characterized in that the fine particles of oxide crystal are dispersed in a liquid medium, and from 0.1 to 40 mass % of the fine particles of oxide crystal are contained, per the total mass of the slurry for polishing.

Abstract: To provide a process for producing CeO2 fine particles having high crystallinity, being excellent in uniformity of composition and particle size and having a small particle size, and a polishing slurry containing such fine particles. A process for producing CeO2 fine particles, which comprises a step of obtaining a melt containing, as represented by mol % based on oxides, from 5 to 50% of CeO2, from 10 to 50% of RO (wherein R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba) and from 30 to 75% of B2O3, a step of quenching the melt to obtain an amorphous material, a step of precipitating CeO2 crystals from the amorphous material, and a step of separating the CeO2 crystals from the obtained crystallized product, in this order. A polishing slurry containing from 0.1 to 20 mass % of such fine particles.

Abstract: It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of Bi2O3, from 4 to 64% of TiO2 and from 6 to 50% of B2O3, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.

Abstract: To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Abstract: To provide a process for producing CeO2 fine particles having high crystallinity, being excellent in uniformity of composition and particle size and having a small particle size, and a polishing slurry containing such fine particles. A process for producing CeO2 fine particles, which comprises a step of obtaining a melt containing, as represented by mol % based on oxides, from 5 to 50% of CeO2, from 10 to 50% of RO (wherein R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba) and from 30 to 75% of B2O3, a step of quenching the melt to obtain an amorphous material, a step of precipitating CeO2 crystals from the amorphous material, and a step of separating the CeO2 crystals from the obtained crystallized product, in this order. A polishing slurry containing from 0.1 to 20 mass % of such fine particles.

Abstract: It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba2+, Sr2+, Ca2+, Pb2+, La3+, K+ and Na+, and B is at least one member selected from the group consisting of Ti4+, Zr4+, Nb5+, Ta5+ and Fe3+) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.

Abstract: The present invention provides a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. A liquid composition for forming a ferroelectric thin film is used, which is characterized by comprising a liquid medium, crystalline ferroelectric oxide particles represented by the formula (Bi2O2)2+(Bim-1TimO3.5m-0.5)2? (wherein m is an integer of from 1 to 5) or (Bi2O2)2+(Am-1TimO3.5m-0.5)2? (wherein A is Bi3+ or La3+, the La3+/Bi3+ ratio is from 0.05 to 0.5, and m is an integer of from 1 to 5) and having an average primary particle diameter of at most 100 nm, dispersed in the liquid medium, and a soluble metal compound capable of forming a ferroelectric oxide by heating, dissolved in the liquid medium.

Abstract: It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba2+, Sr2+, Ca2+, Pb2+, La2+, K+ and Na+, and B is at least one member selected from the group consisting of Ti4+, Zr4+, Nb5+, Ta5+ and Fe3+) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.