Patents by Inventor Yoshihisa Kabaya

Yoshihisa Kabaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoelectric conversion device and camera having a photodiode cathode formed by an n-type buried layer
    Patent number: 8953076
    Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: February 10, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hajime Ikeda, Yoshihisa Kabaya, Takanori Watanabe, Takeshi Ichikawa, Mineo Shimotsusa
  • PHOTOELECTRIC CONVERSION DEVICE AND CAMERA
    Publication number: 20140168492
    Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 19, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hajime Ikeda, Yoshihisa Kabaya, Takanori Watanabe, Takeshi Ichikawa, Mineo Shimotsusa
  • Photoelectric conversion device having an n-type buried layer, and camera
    Patent number: 8670059
    Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: March 11, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hajime Ikeda, Yoshihisa Kabaya, Takanori Watanabe, Takeshi Ichikawa, Mineo Shimotsusa
  • PHOTOELECTRIC CONVERSION DEVICE AND CAMERA
    Publication number: 20110249163
    Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
    Type: Application
    Filed: January 20, 2010
    Publication date: October 13, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hajime Ikeda, Yoshihisa Kabaya, Takanori Watanabe, Takeshi Ichikawa, Mineo Shimotsusa