Abstract: A memory element including a first FET, and a selection switch including a second FET are connected in series, and a semiconductor film and a dielectric film stacked over a substrate form a common channel and a common gate insulating film in the first and second FETs. A first gate electrode of the first FET and a second gate electrode of the second FET are formed on the dielectric film, and a drain electrode and a source electrode are formed on the semiconductor film. Under the semiconductor film, a back-gate electrode is formed with a ferroelectric film interposed therebetween, and the ends of the semiconductor film that forms the channel are located inwardly of the ends of the back-gate electrode.

Abstract: A bearing retainer unit is formed by an insert-molding technique to cast a molded component of the bearing retainer unit utilizing a bearing bushing. A first mold die, having a circumferential surface shaped to correspond to at least a portion of the inner circumferential surface of a bearing-positioning portion of the molded component, and a second mold die, having an abutment that abuts against an axial end face of the first die, are readied. A molten material is then injected into the mold to form the molded part, thereby forming the die-parting line on the inner circumferential surface of the component's bearing positioning portion, positioned at the radially outer side of the abutment.

Abstract: A method to hook a magnet wire extracted from a coil A stator core 35 includes a core back 352 of a substantially annular shape. At a radially outer end portion of the core back 352 four teeth 351 are arranged radially. At the teeth 351, a coil 371 is formed by winding a magnet wire 37 via an insulator 36. A first insulator 361 configuring a lower half of the insulator 36 includes a first core back insulating portion 3611, 1 first teeth insulating portion 3612, and a first cylindrical portion 3613. A hook portion 4 is formed at the first core back insulating portion 3611 at radially outer side, and between the teeth 351. The magnet wire 37 extracted from the coil 371 is hooked on the hook portion 4. The magnet wire 37 hooked on the hook portion 4 is lead the magnet wire 37 around the hook portion 4 as a base, and is soldered to a land 381 formed above a circuit board 38.

Abstract: A forming method of a refractive index matching film comprises steps: one end of an optical fiber is brought into contact with a liquid surface of a photo-curable refractive index matching solution; curing reaction light is made incident to the opposite end of the optical fiber and is emitted through the one end of the optical fiber so as to cure preliminarily the photo-curable refractive index matching solution in contact with the one end of the optical fiber; the curing reaction light is tentatively stopped; the one end of the optical fiber is separated from the liquid surface of the photo-curable refractive index matching solution; and the curing reaction light is made incident again from the opposite end of the optical fiber so as to cure the preliminarily cured photo-curable refractive index matching solution and form a refractive index matching film.

Abstract: A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.

Abstract: An insulated wire includes a conductor, and an insulating layer of a porous member formed on the conductor by using a water-in-oil type emulsion (W/O emulsion) including a thermosetting liquid solventless varnish as the oil and water drops of water-soluble polymer contained in the thermosetting liquid solventless varnish as the water. The insulating layer of the porous member is formed by that the water-in-oil type emulsion is coated so as to form a thin film as a coated film, the thermosetting liquid solventless varnish as the oil is polymerized and cured after the formation of the thin film, and the water drops as the water is dried and removed after the curing of the thermosetting liquid solventless varnish.

Abstract: A method for producing an aqueous absorptive polymer-containing resin composition in which a resin composition is doped with an aqueous absorptive polymer includes causing the aqueous absorptive polymer to absorb and be swollen by water beforehand, and milling and microparticulating the water-absorbed and -swollen absorptive polymer at an ultrasonic flow pressure of not less than 50 MPa.

Abstract: A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.

Abstract: [Summary] [Object] A method to hook a magnet wire extracted from a coil [Means to Solve Problems] A stator core 35 includes a core back 352 of a substantially annular shape. At a radially outer end portion of the core back 352 four teeth 351 are arranged radially. At the teeth 351, a coil 371 is formed by winding a magnet wire 37 via an insulator 36. A first insulator 361 configuring a lower half of the insulator 36 includes a first core back insulating portion 3611, 1 first teeth insulating portion 3612, and a first cylindrical portion 3613. A hook portion 4 is formed at the first core back insulating portion 3611 at radially outer side, and between the teeth 351. The magnet wire 37 extracted from the coil 371 is hooked on the hook portion 4. The magnet wire 37 hooked on the hook portion 4 is lead the magnet wire 37 around the hook portion 4 as a base, and is soldered to a land 381 formed above a circuit board 38.

Abstract: An optical connector has a ferrule, an optical fiber connector disposed at an back end of the ferrule, an internal optical fiber inserted into the ferrule and the optical fiber connector, the internal optical fiber being adapted to butt-connect at a back end face thereof to an external optical fiber to be inserted into the optical fiber connector, and a refractive index matching body attached to the back end face of the internal optical fiber. The refractive index matching body has a cross-linked and hardened cross-linkable refractive index matching agent including a stress-strain relaxation agent.

Abstract: A method of manufacturing a foam-insulated wire, which uses a porous solid, which is able to improve performance of a foam-insulated wire by controlling the dispersion of the void content of the insulation, and the foam-insulated wire manufactured thereby are provided. The method comprising the steps of: forming a film of coating on the conductor with a water-in-oil form emulsion (O/W-form emulsion); curing the oil layer in the film of coating of the water-in-oil form emulsion by polymerization; removing water droplets therefrom; and thereby forming an insulation layer of a porous solid on the conductor.

Abstract: A nonvolatile storage device is provided with a nonvolatile main storage memory whose erase size is larger than a cluster size, and a buffer, i.e. a nonvolatile auxiliary storage memory. At the time of writing data in the memory, the data is temporarily stored in the buffer, then, a plurality of data in the buffer are collectively taken out to be stored in the main storage memory. Data in an original block is saved in a write block in the main storage memory. Thus, the data can be written in the main storage memory at a high speed.

Abstract: A stator core 35 includes a core back 352 of a substantially annular shape. At a radially outer end portion of the core back 352 four teeth 351 are arranged radially. At the teeth 351, a coil 371 is formed by winding a magnet wire 37 via an insulator 36. A first insulator 361 configuring a lower half of the insulator 36 includes a first core back insulating portion 3611, 1 first teeth insulating portion 3612, and a first cylindrical portion 3613. A hook portion 4 is formed at the first core back insulating portion 3611 at radially outer side, and between the teeth 351. The magnet wire 37 extracted from the coil 371 is hooked on the hook portion 4. The magnet wire 37 hooked on the hook portion 4 is lead the magnet wire 37 around the hook portion 4 as a base, and is soldered to a land 381 formed above a circuit board 38.

Abstract: A torsion beam type suspension including a torsion beam in which arms are formed by bending both ends of a pipe material and also includes wheel installation members fixed to the arms, respectively. Portions to be inserted of the wheel installation members are inserted into open ends of the arms, and the wheel installation members are welded to the arms. The torsion beam type suspension can be produced at low cost and have high quality.

Abstract: A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.

Abstract: A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.

Abstract: A hydrated water-absorption polymer containing resin composition includes a liquid cross-link curable resin composition, and a water-absorption polymer dispersed in the liquid cross-link curable resin composition. The water-absorption polymer is preliminarily hydrated and swollen. The water-absorption polymer before being hydrated and swollen includes an average particle diameter of not more than 10 ?m. The water-absorption polymer includes an amount of water absorption of 10 to 100 g/g.

Abstract: An optical fiber includes a core, a clad having a plurality of air holes at a periphery of the core, and a hardening resin filled in a sealed portion at an end of the plurality of air holes. The hardening resin after hardening has a fill length of 7 mm to 8 mm. An optical fiber connection structure includes the optical fiber with an end face butt-connected to another optical fiber. An optical connector includes the optical fiber, and a ferrule to which the optical fiber is attached.

Abstract: A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.

Abstract: A memory element including a first FET, and a selection switch including a second FET are connected in series, and a semiconductor film and a dielectric film stacked over a substrate form a common channel and a common gate insulating film in the first and second FETs. A first gate electrode of the first FET and a second gate electrode of the second FET are formed on the dielectric film, and a drain electrode and a source electrode are formed on the semiconductor film. Under the semiconductor film, a back-gate electrode is formed with a ferroelectric film interposed therebetween, and the ends of the semiconductor film that forms the channel are located inwardly of the ends of the back-gate electrode.