Abstract: The present disclosure provides a (Ba1?z,Srz)3MgSi2O8:Eu2+ based phosphor with high emission quantum efficiency. Specifically, the present disclosure provides a blue light emitting phosphor including: a (Ba1?z,Srz)3MgSi2O8 based crystal where z satisfies 0?z<1 and a (Ba1?z,Srz)MgSiO4 based crystal where z satisfies 0?z<1 as a host crystal; and Eu2+ as a luminescent center.

Abstract: An illumination apparatus of the disclosure includes a semiconductor light-emitting element and a light conversion element. The semiconductor light-emitting element has a first optical waveguide and a second optical waveguide. The light conversion element has a first light converter and a second light converter. A first emitted light emitted from first optical waveguide enters the first light converter and a second emitted light emitted from the second optical waveguide enters the second light converter. First power applied to the first optical waveguide and second power applied to the second optical waveguide are independent.

Abstract: A projection apparatus of the present disclosure includes a light-emitting element for emitting excitation light, a wavelength converter for receiving the excitation light, converting the excitation light into light of a different wavelength, and emitting the converted light as radiation light, and an optical filter for receiving the radiation light. The optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light. With this configuration, the optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light, thus being able to prevent the wavelength converter from being irradiated with long-wavelength light, and being able to prevent deterioration of the wavelength converter.

Abstract: A wavelength conversion member includes a substrate, a dichroic mirror layer, an SiO2 layer, a ZnO layer, and a phosphor layer, which are sequentially stacked from the substrate. The dichroic mirror layer reflects at least part of light incident from the above. The phosphor layer includes a plurality of phosphors and ZnO between the phosphors.

Abstract: A lamp includes: first and second semiconductor light-emitting elements adapted to emit excitation light; a wavelength conversion element adapted to convert the excitation light into light having a peak wavelength different from that of the excitation light; and a concave mirror adapted to reflect the excitation light emitted from the semiconductor light-emitting elements to the wavelength conversion element and reflect the light from the wavelength conversion element toward an outside of the lamp. A distance y1 from an optical axis of the first semiconductor light-emitting element to an optical axis of the concave mirror satisfies (D+Dphos)/2?y1?4f, and a distance y2 from an optical axis of the second semiconductor light-emitting element to the optical axis of the concave mirror satisfies 4f<y2?R.

Abstract: A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0?x?1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0?y?1, 0?z?1) fluorescent substance, and an Eu3+-activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

Abstract: A wavelength conversion member includes a heat conductor, a light guide path and a wavelength converter. The heat conductor has a recessed portion and an opening extending through the heat conductor. The light guide path includes a transparent material with which the opening is filled. The light guide path includes a light exit port disposed on a side of the recessed portion and a light incident port disposed on a side opposite to the recessed portion. The wavelength converter converts first light having a first peak wavelength incident through the light guide path into second light having a second peak wavelength different from the first peak wavelength. The wavelength converter is disposed in contact with the heat conductor, at least a part of the wavelength converter being embedded in the recessed portion.

Abstract: The present invention provides a wavelength conversion board comprising a substrate; one or more fluorescence members each containing a fluorescence substance for converting excitation light into fluorescence, the fluorescence member being disposed on or above the substrate; and a flexible gel disposed around the fluorescence member. The present invention also provides a wavelength conversion board comprising a substrate; a fluorescence member containing fluorescence substance for converting excitation light into fluorescence, the fluorescence member being disposed on or above the substrate; a fluent material disposed around the fluorescence member; a light-transmissive plate parallel to the substrate; and a sealing member disposed around the fluent material in a cross section of the wavelength conversion board. The fluorescence member is interposed between the light-transmissive plate and the substrate in the cross section of the wavelength conversion board.

Abstract: A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0?x?1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0?y<1, 0?z<1) fluorescent substance, and an Eu3+-activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

Abstract: The present invention provides an oxynitride silicate fluorescent substance capable of output a light having a high luminance even when irradiated by an exciting light having a high energy density. The present invention is a yellow fluorescent substance represented by a chemical formula (Ba1-x-y-z,Srx)aSibOcNd:Eu2+y,Y3+z (0.9?a?1.1, 1.9?b?2.1, 1.9?c?2.1, 1.9?d?2.1, 0?x?1, 0<y<0.01, and 0?z<0.01).

Abstract: The present disclosure provides a (Ba1?z,Srz)3MgSi2O8:Eu2+ based phosphor with high emission quantum efficiency. Specifically, the present disclosure provides a blue light emitting phosphor including: a (Ba1?z,Srz)3MgSi2O8 based crystal where z satisfies 0?z<1 and a (Ba1?z,Srz)MgSiO4 based crystal where z satisfies 0?z<1 as a host crystal; and Eu2+ as a luminescent center.

Abstract: A phosphor layer of a plasma display panel has a green phosphor layer containing Zn2SiO4:Mn particles and (Y1-x, Gdx)3(Al1-y, Gay)5O12:Ce particles. The Zn2SiO4:Mn particles satisfy requirements of Zn3p/Si2p?2.10 (1), and Zn2p/Si2p?1.25 (2) wherein Zn3p represents an emission amount of photoelectrons emitted from a 3p orbit of a Zn element in a region up to 10 nm from surfaces of the particles, Zn2p represents an emission amount of photoelectrons emitted from a 2p orbit of the Zn element in a region up to 3 nm from the surfaces of the particles, and Si2p represents an emission amount of photoelectrons emitted from a 2p orbit of a Si element in the region up to 10 nm from the surfaces of the particles.

Abstract: A phosphor layer of a plasma display panel has a green phosphor layer containing Zn2SiO4:Mn particles. The Zn2SiO4:Mn particles satisfy requirements of Zn3p/Si2p?2.06 (1), and Zn2p/Si2p?1.23 (2) wherein Zn3p represents an emission amount of photoelectrons emitted from a 3p orbit of a Zn element in a region up to 10 nm from surfaces of the particles, Zn2p represents an emission amount of photoelectrons emitted from a 2p orbit of the Zn element in a region up to 3 nm from the surfaces of the particles, and Si2p represents an emission amount of photoelectrons emitted from a 2p orbit of a Si element in the region up to 10 nm from the surfaces of the particles.

Abstract: The present invention provides a plasma display device that has light emission properties with short persistence where green light has a persistence time of 3.5 msec or less, that is excellent in luminance, luminance degradation resistance, and color tone, and that is suitable for, for example, a stereoscopic image display device.

Abstract: A plasma display panel includes a front plate, a rear plate facing the front plate, and a phosphor layer formed on the rear plate. The phosphor layer includes a green phosphor layer containing Zn2SiO4:Mn and (Y1-X, GdX)3Al5O12:Ce, where 0?X?1. In Zn2SiO4:Mn, the amount of Mn is no less than 8 at. % to no more than 10 at. % relative to the total amount of Zn and Mn, and the total amount of Zn and Mn is no less than 197 at. % to no more than 202 at. % relative to the amount of Si. The amount of (Y1-X, GdX)3Al5O12:Ce is no less than 20 wt. % to no more than 50 wt. % relative to the total amount of Zn2SiO4:Mn and (Y1-X, GdX)3Al5O12:Ce.

Abstract: The instant application describes a red phosphor material including Y(Px, V1-x)O4:Eu, wherein a value of x is equal to or greater than 0.3 and equal to or less than 0.8.

Abstract: A plasma display panel includes a front plate, a rear plate facing the front plate, and a phosphor layer formed on the rear plate. The phosphor layer includes a green phosphor layer containing Zn2SiO4:Mn and (Y1?X, GdX)3Al5O12:Ce, where 0?X?1. In Zn2SiO4:Mn, the amount of Mn is no less than 8 at. % to no more than 10 at. % relative to the total amount of Zn and Mn, and the total amount of Zn and Mn is no less than 197 at. % to no more than 202 at. % relative to the amount of Si. The amount of (Y1?X, GdX)3Al5O12:Ce is no less than 20 wt. % to no more than 50 wt. % relative to the total amount of Zn2SiO4:Mn and (Y1?X, GdX)3A15O12:Ce.

Abstract: A protective layer of a plasma display panel includes a base layer formed on a dielectric layer, and a plurality of aggregated particles dispersed on an entire surface of the base layer. Phosphor layers include a green phosphor layer containing an Mn2+ activated short persistent green phosphor whose 1/10 afterglow time exceeds 2 msec and stays below 5 msec, and a Ce3+ activated green phosphor or an Eu2+ activated green phosphor having a luminescence peak in a wavelength region of at least 490 nm to less than 560 nm.

Abstract: A display apparatus includes: input port for receiving input of video signal representing display color in red, green, and blue hues; display portion including pixel with red, green, blue and yellow sub-pixels for performing plasma emission in red, green, blue and yellow hues, respectively; and converter for converting video signal and outputting conversion signal for causing sub-pixels to emit light, respectively, such that display color corresponding to display color represented by video signal is displayed on display portion, wherein conversion signal output by converter includes red and green conversion signals for causing red and green sub-pixels to perform plasma emission at lower luminosity value than luminosity value used in the video signal, respectively, and yellow conversion signal for causing yellow sub-pixel to perform plasma emission, and yellow sub-pixel performs plasma emission with shorter afterglow time than red and green sub-pixels.

Abstract: A plasma display device having a panel main body in which a pair of transparent substrates is arranged in opposition so as to form a discharge space between the substrates on at least a front side, barrier ribs are arranged on at least one of the substrates to divide the discharge space into a plurality of spaces, a group of electrodes is arranged on the substrates so as to generate discharge in the discharge space divided with the barrier ribs, and phosphor layers that emit by discharge are provided, in which the phosphor layers are equipped with a green phosphor layer including at least Zn2SiO4:Mn, a surface of Zn2SiO4:Mn is coated with magnesium oxide, and a ratio of an Mg element to a Si element on the surface measured with an XPS apparatus is 0.7 to 4.0.