Abstract: After an electroconductive projection is formed on an electrode of an electronic element, a gas barrier film on which an adhesive layer and a contact hole are formed is laminated and pressure-bonded onto a substrate on which the electronic element is formed. Alternatively, after a gas barrier film on which an adhesive layer and a contact hole are formed is laminated on a substrate on which an electronic element is formed and an electroconductive projection is formed on the electrode inside the contact hole, the substrate and the gas barrier film are pressure-bonded to each other, and the contact hole is filled with an electroconductive material. In this manner, there are provided a method of manufacturing an electronic device; and an electronic device to which a take-out wire used to reliably connect the electronic device to an external device using a small contact hole can be connected even in a case where the electronic device is small.

Abstract: Provided is a light-emitting device including a pair of substrates each of which includes a conductive layer, a light-emitting element, disposed between the pair of substrates, which includes a first electrode and a second electrode facing each other, and a resin layer, containing conductive particles, which fills a space between the substrates and electrically connects the conductive layers of the substrates to the first and second electrodes of the light-emitting element.

Abstract: In the method for producing an organic semiconductor element having a semiconductor layer according to the present invention, an optical system for irradiating a laser beam with a wavelength of at least 4 ?m and a donor substrate prepared by forming an organic semiconductor film on a surface of a supporting member having a laser beam transmittance of at least 50% are used; and the donor substrate and a substrate to be treated serving as a semiconductor element are opposite one another; the laser beam is irradiated from the supporting member side; the laser beam is scanned while modulating in accordance with the semiconductor layer to be formed; and the organic semiconductor film is transferred to the substrate to be treated so as to form the semiconductor layer.

Abstract: An image forming medium capable of forming an image without using a printer including a plurality of first metal electrodes extending in one direction and being parallel to one another, a first oxide layer in which the first metal electrodes are embedded and which is made of an oxide of a metal constituting the first metal electrodes, a plurality of second metal electrodes extending in one direction and crossing the first electrodes in a surface direction of the first oxide layer, a second oxide layer in which the second metal electrodes are embedded and which is made of an oxide of a metal constituting the second metal electrodes, and a thermal color developing layer provided on the first metal electrodes or the second metal electrodes, in which the second metal electrodes are separated from the first metal electrodes by the second oxide layer.

Abstract: A transistor and a manufacturing method of a transistor which prevents a decrease in mobility, prevents a decrease in a withstand voltage of the insulating layer, and prevents a short circuit between a gate electrode and a semiconductor layer due to curvature. A substrate having insulating properties, a source electrode and a drain electrode disposed in a surface direction of a main surface of the substrate by being separated from each other, a gate electrode disposed between the source electrode and the drain electrode in the surface direction of the substrate, a semiconductor layer disposed in contact with the source electrode and the drain electrode, and an insulating film disposed between the gate electrode and the semiconductor layer in a direction perpendicular to the main surface of the substrate are included, and a gap region is formed between the semiconductor layer and the insulating film.

Abstract: A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 ?m and an energy density of from 0.1 to 10 J/cm2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

Abstract: Disclosed are a manufacturing method capable of manufacturing a semiconductor device having a plurality of organic semiconductor elements with a simple process and high productivity, and a semiconductor device. This problem is solved by forming, on an insulating substrate, electrodes corresponding to a plurality of semiconductor elements, in which the position of an uppermost portion of each of a source electrode and a drain electrode is higher than that of a gate electrode, forming an organic semiconductor film on a surface of an insulating support, forming grooves in the organic semiconductor film to form divided regions according to the individual semiconductor elements, and aligning and laminating the insulating support and the insulating substrate.

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: A sensing system includes: a sensor tag including a sensor that measures a physical quantity or a chemical quantity, a memory that stores an expiration date and a correction coefficient value of the sensor, and individual recognition information, and a transmission unit that transmits a measurement value of the sensor and the individual recognition information to the calculator; a center including a storage unit that stores an accurate expiration date and an accurate correction coefficient value for each piece of individual recognition information, and a transmission unit that transmits the accurate expiration date and coefficient value depending on the individual recognition information to the calculator; and a calculator including a transmission unit that transmits the individual recognition information to the center, a reception unit that receives the individual recognition information, the measurement value, and the accurate expiration date and correction coefficient value, a determination unit that deter

Abstract: Provided is a method of forming an organic semiconductor film which uses a shielding member for covering a solution, including: obtaining a state in which a solution that is in contact with the shielding member and contains an organic semiconductor material and a solvent is present, between the substrate and the shielding member positioned parallel to and separated from the substrate, in a predetermined position on the substrate placed on a stage; and moving the stage and the shielding member relative to each other in a predetermined direction. In this manner, an organic semiconductor film having a large area and excellent crystallinity is formed in a desired position on the substrate.

Abstract: In the present invention, an organic semiconductor film is formed by using a cover member which is disposed on a substrate for forming the organic semiconductor film and forms a space relative to the substrate, filling the space between the cover member and the substrate with a solution, and drying the filled solution, wherein the cover member has a control surface on which an uppermost part most separated from the substrate and a descending part provided on both sides in the y-direction of the uppermost part so as to descend from the uppermost part toward the substrate are formed.

Abstract: Provided is a method of manufacturing a light-emitting device, the method including: a step of providing a conductive material on both surfaces of a base material in which a plurality of light-emitting elements each including a first electrode and a second electrode facing each other are formed, and cutting out the light-emitting elements together with the conductive material from the base material, to thereby obtain the light-emitting elements in each of which the first electrode and the second electrode are provided with conductive members having substantially the same sizes as those of the first electrode and the second electrode; a step of mixing the light-emitting elements with a binder having an insulating property to obtain a coating liquid, and applying the coating liquid onto a first substrate having a conductive layer formed thereon, to thereby form a coating layer; a step of laminating a second substrate having a conductive layer formed thereon on the first substrate so that the coating layer is in

Abstract: Provided is a light-emitting device including a pair of substrates each of which includes a conductive layer, a light-emitting element, disposed between the pair of substrates, which includes a first electrode and a second electrode facing each other, and a resin layer, containing conductive particles, which fills a space between the substrates and electrically connects the conductive layers of the substrates to the first and second electrodes of the light-emitting element.

Abstract: The present invention provides an illumination device which selectively radiates either one of right-circularly polarized light and left-circularly polarized light, comprising a reflective polarizing plate 1, a light source, and a reflective polarizing plate 2 in this order, and further comprising a retardation plate, wherein the reflective polarizing plate 1, the light source, and the reflective polarizing plate 2 are disposed such that polarized light reflected by the reflective polarizing plate 1 passes through the reflective polarizing plate 2 and polarized light reflected by the reflective polarizing plate 2 passes through the reflective polarizing plate 1, and phase difference and disposition of the retardation plate are adjusted such that the above either one of the circularly polarized lights is radiated toward both of a direction of the reflective polarizing plate 1 and a direction of the reflective polarizing plate 2 based on the light source.

Abstract: In the method for producing an organic semiconductor element having a semiconductor layer according to the present invention, an optical system for irradiating a laser beam with a wavelength of at least 4 ?m and a donor substrate prepared by forming an organic semiconductor film on a surface of a supporting member having a laser beam transmittance of at least 50% are used; and the donor substrate and a substrate to be treated serving as a semiconductor element are opposite one another; the laser beam is irradiated from the supporting member side; the laser beam is scanned while modulating in accordance with the semiconductor layer to be formed; and the organic semiconductor film is transferred to the substrate to be treated so as to form the semiconductor layer.

Abstract: In the present invention, an organic semiconductor film is formed by using a cover member which is disposed on a substrate for forming the organic semiconductor film and forms a space relative to the substrate, filling the space between the cover member and the substrate with a solution, and drying the filled solution, wherein the cover member has a control surface on which an uppermost part most separated from the substrate and a descending part provided on both sides in the y-direction of the uppermost part so as to descend from the uppermost part toward the substrate are formed.

Abstract: A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 ?m and an energy density of from 0.1 to 10 J/cm2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

Abstract: The process for manufacturing a conductive film, said process being capable of achieving efficient progress of reduction of a metal oxide into a metal and yielding a conductive film which exhibits excellent adhesion to a substrate; and a printed wiring board. This process includes: a step for applying a dispersion which contains metal oxide particles to a substrate to form a precursor film which contains the particles; and a step for irradiating the precursor film with a continuous-wave laser beam while scanning the laser beam relatively, and thereby reducing the metal oxide in an irradiated area to form a metal-containing conductive film. In the process, the scanning speed is 1.0 m/s or more, the laser power of the continuous-wave laser beam is 6.0 W or more, and the irradiation time per point on the surface of the precursor film is 1.0 ?s or more.

Abstract: The present invention provides an illumination apparatus for plant cultivation, including a unit configured to change light in any wavelength region of 300 nm or higher and 600 nm or lower (wavelengths of 452 nm to 474 nm, for example) to light in the wavelength region having dominantly a right-circularly polarized light component. The illumination apparatus of the present invention enables irradiation with light that is capable of giving a specific effect in plant cultivation.