Abstract: A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A method is for forming a periodic groove arrangement. According to the method, a base material made of metal is provided. Furthermore, the periodic groove arrangement, which includes a plurality of periodic grooves, is formed on a surface of the base material by irradiating and scanning the surface of the base material with a pulsed laser. A fuel injection system includes a nozzle hole forming part and the periodic groove arrangement formed by the method. The nozzle hole forming part includes a nozzle hole, which passes through the nozzle hole forming part and through which fuel is injected. The periodic groove arrangement is formed on an outer surface of the nozzle hole forming part.

Abstract: A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).