Patents by Inventor Yoshihito Sato

Yoshihito Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010019307
    Abstract: An electronic toll collection system (ETCS) for use in a tollgate for charging a car without the need for the car to stop, in which communication failures or errors due to reflected waves from a structure or a passing car are prevented. A roadside communication antenna which communicates with a vehicle-mounted communication antenna for charging, and a car sensor which detects a car (cars) in an area wider than a designed communication area are installed at the tollgate. As an electromagnetic wave path judgment section obtains data on the profile and position of a car which has entered the tollgate, from a car data detector, it calculates electromagnetic wave paths of direct and reflected waves which connect the roadside communication antenna 21 and the vehicle-mounted antenna in each of the cars, and calculates the receiving electric field strength for each of the paths.
    Type: Application
    Filed: February 27, 2001
    Publication date: September 6, 2001
    Inventors: Yoshihito Sato, Manabu Kato
  • Patent number: 6278137
    Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.
    Type: Grant
    Filed: March 5, 1998
    Date of Patent: August 21, 2001
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Kenji Shimoyama, Nobuyuki Hosoi, Katsushi Fujii, Atsunori Yamauchi, Hideki Gotoh, Yoshihito Sato
  • Patent number: 6097313
    Abstract: An information exchange system is capable of realizing useful information exchange both for the service provider located along the road and providing services and the vehicular driver, by effectively using limited communication capacity of the road-vehicle radio communication. The information exchange system has a vehicle-mounted unit and a road-side unit providing information to the vehicle-mounted unit using a road-vehicle radio communication. The vehicle-mounted unit includes receiving unit receiving information transmitted from the road-side unit through a radio communication and transferring unit transferring at least a part of a content of the received information to a vehicular occupant. The road-side unit including storage unit storing information to be transmitted to the vehicle-mounted unit and transmitting unit transmitting information to the vehicle-mounted unit through the radio communication.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: August 1, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Kazunori Takahashi, Yoshihito Sato, Takeshi Shima, Hiroshi Shojima, Takayuki Iino
  • Patent number: 5811839
    Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.
    Type: Grant
    Filed: August 31, 1995
    Date of Patent: September 22, 1998
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Kenji Shimoyama, Nobuyuki Hosoi, Katsushi Fujii, Atsunori Yamauchi, Hideki Gotoh, Yoshihito Sato