Abstract: It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.

Abstract: A plastic optical fiber cable includes: a bare optical fiber including a core made of a poly(methyl methacrylate) or a copolymer including methyl methacrylate as a major component and a cladding layer including, at least in the outermost layer, a layer made of a certain fluorine-containing olefin-based resin; and a coating layer provided on the outer surface thereof. The coating layer includes a protective coating layer, a light blocking coating layer, and a functional coating layer, the layers being provided in the order mentioned from inner side. The protective coating layer is made of a certain resin material. The light blocking coating layer is made of a nylon-based resin including, as a major component, nylon 11 or nylon 12, the nylon-based resin containing monomer and oligomer compounds derived from the nylon-based resin in an amount of a certain range.

Abstract: It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.

Abstract: A polyarylene sulfide resin composition comprises (A) 100 parts by weight of a polyarylene sulfide resin and (B) 0.05 to 100 parts by weight of at least one gas-trapping agent selected from zinc carbonate, zinc hydroxide and a complex salt of zinc carbonate and zinc hydroxide. It further comprises up to 400 parts by weight of an inorganic filler other than the gas-trapping agent (B) in way of material, the filler being in the form of fibers, particles and/or plates.

Abstract: A polyarylene sulfide resin composition, being improved in thermal resistance and mouldability, comprises (A) 100 parts by weight of a polyarylene sulfide resin, (B) 0.