Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C—O—C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group ≡C—COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C—O—C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group ≡C—COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Abstract: The invention provides a novel polymer comprising a recurring unit of formula (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Abstract: The invention provides a novel polymer comprising a recurring unit of formula. (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition.

Abstract: An anti-reflective coating composition comprising a polyimide dissolved in an organic solvent is used to form an anti-reflective coating beneath a chemical amplification type resist layer. The composition allows a fine resist pattern to be formed with high accuracy in a convenient, efficient, reproducible manner.

Abstract: A resist composition comprising an alkali-soluble resin, typically a partially t-butoxycarbonylated polyhydroxystyrene, a p-butoxystyrene/t-butylacrylate copolymer or p-butoxystyrene/maleic anhydride copolymer as a dissolution inhibitor, and a iodonium or sulfonium salt as a photoacid generator is effective for forming a resist film which can be precisely and finely patterned using high energy radiation such as a KrF excimer laser.

Abstract: Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

Abstract: Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

Abstract: A partially tert-butoxylated poly(p-hydroxystyrene) is prepared by subjecting poly(p-tert-butoxystyrene) to reaction of eliminating some of the tert-butoxy groups in an organic solvent at a temperature of 30.degree.-100.degree. C. in the presence of an acid catalyst at a molar ratio of acid catalyst/t-BuO group of from 0.050 to 2.0. During the elimination reaction, a change of solubility of the resulting partially tert-butoxylated poly(p-hydroxystyrene) is determined to calculate a degree of elimination of tert-butoxy groups. The reaction is terminated when a desired degree of elimination is reached. Through a simple process, partially tert-butoxylated poly(p-hydroxystyrene) having a well controlled t-BuO content is produced in high yields.

Abstract: A water-soluble composition comprising a water-soluble N-vinylpyrrolidone copolymer and a fluorinated organic acid in a weight ratio of from 20:80 to 70:30 is useful in forming a water-soluble overlying film on a chemically amplified resist layer. The overlying film functions as both an anti-reflective film and a protective film during resist pattern formation by photolithography.

Abstract: By blending a silazane with an organic silicon polymer such as polycarbosilane and polysilazane and inorganic powder such as alumina and silica, there is obtained a coating composition which can be applied and baked onto metallic and non-metallic substrates to form dielectric coatings which are improved in many properties including substrate adhesion, hardness, electrical insulation, heat resistance, water resistance, and chemical resistance.

Abstract: A resist composition comprising a base resin, an acid release agent, and a dissolution inhibitor is improved in sensitivity and resolution when the base resin is typically selected from poly-t-butoxystyrene/poly-hydroxystyrene, poly-t-butoxystyrene/poly-p-methoxymethoxystyrene/polyhydroxystyrene, and poly-t-butoxystyrene/poly-p-methoxystyrene/polyhydroxystyrene copolymers. The composition forms a resist useful for the manufacture of LSI.

Abstract: A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I]wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.

Abstract: Heat resistant, dielectric coatings are formed by applying a heat resistant coating composition comprising an organic silicon polymer, a silazane compound, and an inorganic filler to a substrate, and baking the coating in ammoniacal atmosphere at 200.degree. to 1000.degree. C. Similarly, heat resistant, dielectric coatings are formed by applying the same composition as above to a substrate, baking a first coating layer in air, applying an organic silicon polymer base coating composition to the first coating layer, and baking a second coating layer in ammoniacal atmosphere.

Abstract: An organic silazane polymer is prepared by reacting ammonia gas with a mixture of a trihalosilane and a monohalosilane, for example, methyltrichlorosilane and trimethylchlorosilane in an organic solvent to form a silazane compound, and heating the silazane compound at 200 to 350.degree. C. for polymerization. By melting, shaping, infusibilizing, and firing the silazane polymer, there is obtained a ceramic material.

Abstract: Organic silazane polymers are prepared by reacting a specific organic silicon compound or a mixture of organic silicon compounds with a disilazane at a temperature of 25.degree. to 350.degree. C. in an anhydrous atmosphere. The polymers are then reacted with ammonia, thereby reducing the residual halogen in the polymers. The resulting organic silazane polymers are resistant against hydrolysis and stable and thus suitable as precursors for manufacturing ceramic fibers and sheets by shaping, infusibilizing and firing.

Abstract: A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I]wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.

Abstract: An organic silazane polymer is prepared by passing a silazane compound in por form through a hollow tube heated at 400.degree. to 700.degree. C. for activation and thermally polymerizing the silazane compound in a liquid phase. Inorganic fibers can be prepared from the organic silazane polymer by melt spinning, infusibilizing, and sintering. An apparatus for preparing an organic silazane polymer is also provided, comprising a heated reactor vessel for evaporating and thermally polymerizing a silazane compound, a heated hollow tube in flow communication with said reactor vessel for receiving the silazane compound vapor and heating it at 400.degree. to 700.degree. C. for activation, and a conduit, with a condenser for condensing the vapor, for feeding the condensed silazane compound back to the reactor.