Patents by Inventor Yoshihumi Yaoi

Yoshihumi Yaoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a thin film semiconductor device
    Patent number: 6013310
    Abstract: A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.
    Type: Grant
    Filed: September 24, 1997
    Date of Patent: January 11, 2000
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihumi Yaoi, Yoko Katsuya, Shuhei Tsuchimoto
  • Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
    Patent number: 5707746
    Abstract: A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.
    Type: Grant
    Filed: September 21, 1993
    Date of Patent: January 13, 1998
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihumi Yaoi, Yoko Katsuya, Shuhei Tsuchimoto