Abstract: A plurality of alignment marks are formed on a semiconductor wafer in an area which is separate from or non-coincident with outside a plurality of chip regions, such as in a periphery of the wafer, irrespectively of the size and arrangement of the chip regions. Such wafers, which are previously manufactured, are then subjected to electron beam exposure in accordance with circuit design data. The electron beam exposure is typically implemented through global alignment using the alignment marks.

Abstract: An electron-beam exposure apparatus, comprising an electron gun for emitting an electron beam, a first aperture for shaping the electron beam in a prescribed manner, and a second aperture, which is provided with an opening for varying the cross-sectional shape of the electron beam passing through the first aperture. The second aperture is provided with a variable-shape opening, partial one-shot exposure openings, beam spot dimension correction openings, and deflectors for deflecting the electron beam passing through the first aperture, said deflectors being disposed between the first and second apertures.

Abstract: In an electron-beam writing system comprising an electron gun for radiating an original electron beam along an electron gun axis, a first aperture member for shaping the original electron beam into a primary shaped electron beam, and deflecting means for deflecting the primary shaped electron beam from the electron gun axis to produce a deflected electron beam, and a second aperture member for shaping the first deflected electron beam into a secondary shaped electron beam, the second aperture member has a plurality of secondary apertures which include at least one rectangular beam-size adjustment aperture having a known design size. The secondary apertures may include a plurality of rectangular beam-size adjustment apertures having longitudinal and lateral dimensions either which vary at a constant ratio.