Patents by Inventor Yoshikatsu Miura
Yoshikatsu Miura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230352375Abstract: There is provided a semiconductor device, including: a semiconductor element which includes an element main surface and an element rear surface that face opposite sides in a thickness direction and in which a first electrode and a second electrode are formed on the element main surface; a first conductive member electrically connected to the first electrode; a second conductive member electrically connected to the second electrode; and a sealing resin configured to cover part of the first conductive member, part of the second conductive member, and the semiconductor element.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Inventor: Yoshikatsu MIURA
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Patent number: 11742264Abstract: There is provided a semiconductor device, including: a semiconductor element which includes an element main surface and an element rear surface that face opposite sides in a thickness direction and in which a first electrode and a second electrode are formed on the element main surface; a first conductive member electrically connected to the first electrode; a second conductive member electrically connected to the second electrode; and a sealing resin configured to cover part of the first conductive member, part of the second conductive member, and the semiconductor element.Type: GrantFiled: May 5, 2021Date of Patent: August 29, 2023Assignee: ROHM CO., LTD.Inventor: Yoshikatsu Miura
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Publication number: 20210257281Abstract: There is provided a semiconductor device, including: a semiconductor element which includes an element main surface and an element rear surface that face opposite sides in a thickness direction and in which a first electrode and a second electrode are formed on the element main surface; a first conductive member electrically connected to the first electrode; a second conductive member electrically connected to the second electrode; and a sealing resin configured to cover part of the first conductive member, part of the second conductive member, and the semiconductor element.Type: ApplicationFiled: May 5, 2021Publication date: August 19, 2021Inventor: Yoshikatsu MIURA
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Patent number: 11031322Abstract: There is provided a semiconductor device, including: a semiconductor element which includes an element main surface and an element rear surface that face opposite sides in a thickness direction and in which a first electrode and a second electrode are formed on the element main surface; a first conductive member electrically connected to the first electrode; a second conductive member electrically connected to the second electrode; and a sealing resin configured to cover part of the first conductive member, part of the second conductive member, and the semiconductor element.Type: GrantFiled: April 18, 2019Date of Patent: June 8, 2021Assignee: ROHM CO., LTD.Inventor: Yoshikatsu Miura
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Publication number: 20190326204Abstract: There is provided a semiconductor device, including: a semiconductor element which includes an element main surface and an element rear surface that face opposite sides in a thickness direction and in which a first electrode and a second electrode are formed on the element main surface; a first conductive member electrically connected to the first electrode; a second conductive member electrically connected to the second electrode; and a sealing resin configured to cover part of the first conductive member, part of the second conductive member, and the semiconductor element.Type: ApplicationFiled: April 18, 2019Publication date: October 24, 2019Inventor: Yoshikatsu MIURA
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Patent number: 10109749Abstract: This semiconductor device includes: a semiconductor layer that is formed of first conductivity-type SiC; a plurality of trenches that are formed in the semiconductor layer; second conductivity-type column regions that are formed along the inner surfaces of the trenches; a first conductivity-type column region that is disposed between the adjacent second conductivity-type column regions; and insulating films that are embedded in the trenches. The semiconductor device is capable of improving a withstand voltage by means of a super junction structure. The semiconductor device may also include an electric field attenuation section for attenuating electric field intensity of a surface section of the first conductivity-type column region.Type: GrantFiled: December 12, 2017Date of Patent: October 23, 2018Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yoshikatsu Miura
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Publication number: 20180114868Abstract: This semiconductor device includes: a semiconductor layer that is formed of first conductivity-type SiC; a plurality of trenches that are formed in the semiconductor layer; second conductivity-type column regions that are formed along the inner surfaces of the trenches; a first conductivity-type column region that is disposed between the adjacent second conductivity-type column regions; and insulating films that are embedded in the trenches. The semiconductor device is capable of improving a withstand voltage by means of a super junction structure. The semiconductor device may also include an electric field attenuation section for attenuating electric field intensity of a surface section of the first conductivity-type column region.Type: ApplicationFiled: December 12, 2017Publication date: April 26, 2018Inventors: Masatoshi AKETA, Yoshikatsu MIURA
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Patent number: 9876124Abstract: This semiconductor device includes: a semiconductor layer that is formed of first conductivity-type SiC; a plurality of trenches that are formed in the semiconductor layer; second conductivity-type column regions that are formed along the inner surfaces of the trenches; a first conductivity-type column region that is disposed between the adjacent second conductivity-type column regions; and insulating films that are embedded in the trenches. The semiconductor device is capable of improving a withstand voltage by means of a super junction structure. The semiconductor device may also include an electric field attenuation section for attenuating electric field intensity of a surface section of the first conductivity-type column region.Type: GrantFiled: May 11, 2015Date of Patent: January 23, 2018Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yoshikatsu Miura
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Publication number: 20170077318Abstract: This semiconductor device includes: a semiconductor layer (6) that is formed of first conductivity-type SiC; a plurality of trenches (8) that are formed in the semiconductor layer; second conductivity-type column regions (12) that are formed along the inner surfaces of the trenches; a first conductivity-type column region (13) that is disposed between the adjacent second conductivity-type column regions; and insulating films (14) that are embedded in the trenches. The semiconductor device is capable of improving a withstand voltage by means of a super junction structure. The semiconductor device may also include an electric field attenuation section (16) for attenuating electric field intensity of a surface section of the first conductivity-type column region (13).Type: ApplicationFiled: May 11, 2015Publication date: March 16, 2017Inventors: Masatoshi AKETA, Yoshikatsu MIURA
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Patent number: 9444222Abstract: The 2D-PC surface emitting laser includes: a PC layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a surface vertical direction of the PC layer. The perturbation for diffracting the light wave in the surface vertical direction of the PC layer is applied to the lattice point for forming resonant-state. The term “perturbation” means that modulation is periodically applied to the lattice point for forming resonant-state. For example, the periodic modulation may be refractive index modulation, hole-diameter modulation, or hole-depth modulation.Type: GrantFiled: January 7, 2014Date of Patent: September 13, 2016Assignee: ROHM CO., LTD.Inventors: Takui Sakaguchi, Seita Iwahashi, Eiji Miyai, Wataru Kunishi, Dai Onishi, Yoshikatsu Miura
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Publication number: 20150372452Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.Type: ApplicationFiled: July 23, 2015Publication date: December 24, 2015Inventors: Susumu NODA, Takui SAKAGUCHI, Kazuya NAGASE, Wataru KUNISHI, Eiji MIYAI, Yoshikatsu MIURA, Dai OHNISHI
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Patent number: 9130348Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.Type: GrantFiled: July 28, 2011Date of Patent: September 8, 2015Assignees: KYOTO UNIVERSITY, ROHM CO., LTD.Inventors: Susumu Noda, Takui Sakaguchi, Kazuya Nagase, Wataru Kunishi, Eiji Miyai, Yoshikatsu Miura, Dai Ohnishi
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Publication number: 20140364330Abstract: The invention provides a bio-sensing nanodevice comprising: a stabilized G-protein coupled receptor on a support, a real time receptor-ligand binding detection method, a test composition delivery system and a test composition recognition program. The G-protein coupled receptor can be stabilized using surfactant peptide. The nanodevice provides a greater surface area for better precision and sensitivity to odorant detection. The invention further provides a microfluidic chip containing a stabilized G-protein coupled receptor immobilized on a support, and arranged in at least two dimensional microarray system. The invention also provides a method of delivering odorant comprising the step of manipulating the bubbles in complex microfluidic networks wherein the bubbles travel in a microfluidic channel carrying a variety of gas samples to a precise location on a chip. The invention further provides method of fabricating hOR17-4 olfactory receptor.Type: ApplicationFiled: June 9, 2014Publication date: December 11, 2014Inventors: Andreas Mershin, Brian Cook, Liselotte Kaiser, Johanna F. Bikker, Yoshikatsu Miura, Daisuke Niwa, Dai Ohnishi, Atsushi Tazuke, Shuguang Zhang
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Publication number: 20140348195Abstract: The 2D-PC vertical cavity surface emitting laser includes: a PC layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a surface vertical direction of the PC layer. The perturbation for diffracting the light wave in the surface vertical direction of the PC layer is applied to the lattice point for forming resonant-state. The term “perturbation” means that modulation is periodically applied to the lattice point for forming resonant-state. For example, the periodic modulation may be refractive index modulation, hole-diameter modulation, or hole-depth modulation.Type: ApplicationFiled: January 7, 2014Publication date: November 27, 2014Applicant: ROHM CO., LTD.Inventors: Takui SAKAGUCHI, Seita IWAHASHI, Eiji MIYAI, Wataru KUNISHI, Dai ONISHI, Yoshikatsu MIURA
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Patent number: 8748111Abstract: The invention provides a bio-sensing nanodevice comprising: a stabilized G-protein coupled receptor on a support, a real time receptor-ligand binding detection method, a test composition delivery system and a test composition recognition program. The G-protein coupled receptor can be stabilized using surfactant peptide. The nanodevice provides a greater surface area for better precision and sensitivity to odorant detection. The invention further provides a microfluidic chip containing a stabilized G-protein coupled receptor immobilized on a support, and arranged in at least two dimensional microarray system. The invention also provides a method of delivering odorant comprising the step of manipulating the bubbles in complex microfluidic networks wherein the bubbles travel in a microfluidic channel carrying a variety of gas samples to a precise location on a chip. The invention further provides method of fabricating hOR17-4 olfactory receptor.Type: GrantFiled: January 28, 2011Date of Patent: June 10, 2014Assignee: Massachusetts Institute of TechnologyInventors: Andreas Mershin, Brian Cook, Liselotte Kaiser, Johanna F. Bikker, Yoshikatsu Miura, Daisuke Niwa, Dai Ohnishi, Atsushi Tazuke, Shuguang Zhang
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Patent number: 8619830Abstract: A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality: ? 1 a x ? ? 1 - 1 a x ? ? 2 ? ( 1 a x ? ? 1 + 1 a x ? ? 2 ) 2 + ( 2 a y ) 2 ? 1 n .Type: GrantFiled: August 10, 2012Date of Patent: December 31, 2013Assignees: Kyoto University, Rohm Co., Ltd.Inventors: Susumu Noda, Seita Iwahashi, Toshiyuki Nobuoka, Takui Sakaguchi, Eiji Miyai, Wataru Kunishi, Dai Ohnishi, Kazuya Nagase, Yoshikatsu Miura
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Publication number: 20130039375Abstract: A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality: ? 1 a x ? ? 1 - 1 a x ? ? 2 ? ( 1 a x ? ? 1 + 1 a x ? ? 2 ) 2 + ( 2 a y ) 2 ? 1 n .Type: ApplicationFiled: August 10, 2012Publication date: February 14, 2013Applicants: ROHM CO., LTD., KYOTO UNIVERSITYInventors: Susumu NODA, Seita IWAHASHI, Toshiyuki NOBUOKA, Takui SAKAGUCHI, Eiji MIYAI, Wataru KUNISHI, Dai OHNISHI, Kazuya NAGASE, Yoshikatsu MIURA
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Patent number: 8358880Abstract: The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.Type: GrantFiled: December 16, 2009Date of Patent: January 22, 2013Assignees: Rohm Co., Ltd., Tsinghua UniversityInventors: Fang Liu, Rui-Yuan Wan, Yi-Dong Huang, Xue Feng, Wei Zhang, Jiang De Peng, Yoshikatsu Miura, Daisuke Niwa, Dai Ohnishi
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Publication number: 20120027038Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.Type: ApplicationFiled: July 28, 2011Publication date: February 2, 2012Applicants: ROHM CO., LTD., KYOTO UNIVERSITYInventors: Susumu Noda, Takui Sakaguchi, Kazuya Nagase, Wataru Kunishi, Eiji Miyai, Yoshikatsu Miura, Dai Ohnishi
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Publication number: 20120021932Abstract: The invention provides a bio-sensing nanodevice comprising: a stabilized G-protein coupled receptor on a support, a real time receptor-ligand binding detection method, a test composition delivery system and a test composition recognition program. The G-protein coupled receptor can be stabilized using surfactant peptide. The nanodevice provides a greater surface area for better precision and sensitivity to odorant detection. The invention further provides a microfluidic chip containing a stabilized G-protein coupled receptor immobilized on a support, and arranged in at least two dimensional microarray system. The invention also provides a method of delivering odorant comprising the step of manipulating the bubbles in complex microfluidic networks wherein the bubbles travel in a microfluidic channel carrying a variety of gas samples to a precise location on a chip. The invention further provides method of fabricating hOR17-4 olfactory receptor.Type: ApplicationFiled: January 28, 2011Publication date: January 26, 2012Inventors: Andreas Mershin, Brian Cook, Liselotte Kaiser, Johanna F. Bikker, Yoshikatsu Miura, Daisuke Niwa, Dai Ohnishi, Atsushi Tazuke, Shuguang Zhang