Patents by Inventor Yoshikatsu Nishikawa
Yoshikatsu Nishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10913686Abstract: A composite ceramic powder of the present invention includes: a LAS-based ceramic powder having precipitated therein ?-eucryptite or a ?-quartz solid solution as a main crystal; and TiO2 powder and/or ZrO2 powder.Type: GrantFiled: June 19, 2017Date of Patent: February 9, 2021Assignee: NIPPON ELECTRIC GLASS CO., LTD.Inventors: Masayuki Hirose, Yoshikatsu Nishikawa, Takuji Oka
-
Patent number: 10710926Abstract: A sealing material of the present invention is a sealing material for sealing a metal material, including 70 mass % to 100 mass % of glass powder including alkali silicate glass and 0 mass % to 30 mass % of ceramic powder, and having a linear thermal expansion coefficient in a temperature range of from 30° C. to 380° C. of more than 100×10?7/° C. and 170×10?7/° C. or less.Type: GrantFiled: January 5, 2017Date of Patent: July 14, 2020Assignee: NIPPON ELECTRIC GLASS CO., LTD.Inventors: Yoshikatsu Nishikawa, Masayuki Hirose
-
Publication number: 20190225547Abstract: A composite ceramic powder of the present invention includes: a LAS-based ceramic powder having precipitated therein ?-eucryptite or a ?-quartz solid solution as a main crystal; and TiO2 powder and/or ZrO2 powder,.Type: ApplicationFiled: June 19, 2017Publication date: July 25, 2019Applicant: Nippon Electric Glass Co., Ltd.Inventors: Masayuki HIROSE, Yoshikatsu NISHIKAWA, Takuji OKA
-
Publication number: 20190010082Abstract: A sealing material of the present invention is a sealing material for sealing a metal material, including 70 mass % to 100 mass % of glass powder including alkali silicate glass and 0 mass % to 30 mass % of ceramic powder, and having a linear thermal expansion coefficient in a temperature range of from 30° C. to 380° C. of more than 100×10?7/° C. and 170×10?7/° C. or less.Type: ApplicationFiled: January 5, 2017Publication date: January 10, 2019Applicant: Nippon Electric Glass Co., Ltd.Inventors: Yoshikatsu NISHIKAWA, Masayuki HIROSE
-
Patent number: 9363866Abstract: A touch switch including: at least two of operation faces provided side by side; a detection electrode provided in each of the operation faces and including a wiring pattern of an electric conductor formed on or immediately below the operation face; and a controller connected to each of the detection electrodes to perform a switching operation by detecting variations of capacitance sensed by each of the detection electrodes, the variation of capacitance being generated when a human body part is in proximity to or in contact with each of the operation faces. At least one of the detection electrodes includes a wiring pattern more sparsely formed in a vicinity area of a boundary with another operation face adjacent thereto compared to a wiring pattern of the detection electrode provided in the adjacent operation face. Therefore, detection errors or accidental operations between adjacent switches can be prevented from happening.Type: GrantFiled: September 7, 2012Date of Patent: June 7, 2016Assignee: TOYOTA BOSHOKU KABUSHIKI KAISHAInventors: Yoshikatsu Nishikawa, Naoya Hanada
-
Patent number: 9040177Abstract: A dopant host containing, in terms of mole %, 20 to 50% SiO2, 30 to 60% (exclusive of 30%) Al2O3, 10 to 40% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO2, 10 to 30% Al2O3, 15 to 50% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO2, 50 to 85% Al2O3, 5 to 20% B2O3, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.Type: GrantFiled: January 24, 2014Date of Patent: May 26, 2015Assignee: Nippon Electric Glass Co., Ltd.Inventors: Yoshio Umayahara, Ryota Suzuki, Yoshikatsu Nishikawa, Masaru Ikebe, Hiroki Mori, Yoshinori Hasegawa
-
Publication number: 20140141258Abstract: A dopant host containing, in terms of mole %, 20 to 50% SiO2, 30 to 60% (exclusive of 30%) Al2O3, 10 to 40% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO2, 10 to 30% Al2O3, 15 to 50% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO2, 50 to 85% Al2O3, 5 to 20% B2O3, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.Type: ApplicationFiled: January 24, 2014Publication date: May 22, 2014Applicant: Nippon Electric Glass Co., Ltd.Inventors: Yoshio UMAYAHARA, Ryota SUZUKI, Yoshikatsu NISHIKAWA, Masaru IKEBE, Hiroki MORI, Yoshinori HASEGAWA
-
Publication number: 20130088175Abstract: A touch switch including: at least two of operation faces provided side by side; a detection electrode provided in each of the operation faces and including a wiring pattern of an electric conductor formed on or immediately below the operation face; and a controller connected to each of the detection electrodes to perform a switching operation by detecting variations of capacitance sensed by each of the detection electrodes, the variation of capacitance being generated when a human body part is in proximity to or in contact with each of the operation faces. At least one of the detection electrodes includes a wiring pattern more sparsely formed in a vicinity area of a boundary with another operation face adjacent thereto compared to a wiring pattern of the detection electrode provided in the adjacent operation face. Therefore, detection errors or accidental operations between adjacent switches can be prevented from happening.Type: ApplicationFiled: September 7, 2012Publication date: April 11, 2013Applicant: TOYOTA BOSHOKU KABUSHIKI KAISHAInventors: Yoshikatsu NISHIKAWA, Naoya HANADA
-
Publication number: 20100136314Abstract: A dopant host containing, in terms of mole %, 20 to 50% SiO2, 30 to 60% (exclusive of 30%) Al2O3, 10 to 40% B2O3, and 2 to 10% RO, wherein R represents an alkaline earth metal, or including a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO2, 10 to 30% Al2O3, 15 to 50% B2O3, 2 to 10% RO, wherein R represents an alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO2, 50 to 85% Al2O3, 5 to 20% B2O3, and 0.5 to 7% RO, wherein R represents an alkaline earth metal. A process for producing a boron dopant for a semiconductor includes the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.Type: ApplicationFiled: October 28, 2008Publication date: June 3, 2010Applicant: NIPPON ELECTRIC GLASS CO., LTD.Inventors: Yoshio Umayahara, Ryota Suzuki, Yoshikatsu Nishikawa, Masaru Ikebe, Hiroki Mori, Yoshinori Hasegawa
-
Patent number: 7015160Abstract: Glass powder for a dielectric material has a nature that, when fired, diopside (CaMgSi2O6) and at least one of titanite (CaTi(SiO4)O) and titania (TiO2) are precipitated. Preferably, the glass powder has a composition including SiO2, CaO, MgO, and TiO2 and the total content of these components is 80 mass % or more. Preferably, the glass powder comprises, by mass percent, 35–65% SiO2, 10–30% CaO, 10–20% MgO, and 12–30% TiO2.Type: GrantFiled: February 18, 2005Date of Patent: March 21, 2006Assignee: Nippon Electric Glass Co., Ltd.Inventors: Yoshikatsu Nishikawa, Yoshio Umayahara
-
Publication number: 20050148452Abstract: Glass powder for a dielectric material has a nature that, when fired, diopside (CaMgSi2O6) and at least one of titanite (CaTi(SiO4)O) and titania (TiO2) are precipitated. Preferably, the glass powder has a composition including SiO2, CaO, MgO, and TiO2 and the total content of these components is 80 mass % or more. Preferably, the glass powder comprises, by mass percent, 35-65% SiO2, 10-30% CaO, 10-20% MgO, and 12-30% TiO2.Type: ApplicationFiled: February 18, 2005Publication date: July 7, 2005Applicant: Nippon Electric Glass Co., Ltd.Inventors: Yoshikatsu Nishikawa, Yoshio Umayahara
-
Patent number: 6875715Abstract: Glass powder for a dielectric material has a nature that, when fired, diopside (CaMgSi2O6) and at least one of titanite (CaTi(SiO4)O) and titania (TiO2) are precipitated. Preferably, the glass powder has a composition including SiO2, CaO, MgO, and TiO2 and the total content of these components is 80 mass % or more. Preferably, the glass powder comprises, by mass percent, 35-65% SiO2, 10-30% CaO, 10-20% MgO, and 12-30% TiO2.Type: GrantFiled: March 4, 2003Date of Patent: April 5, 2005Assignee: Nippon Electric Glass Co., Ltd.Inventors: Yoshikatsu Nishikawa, Yoshio Umayahara
-
Patent number: 6699605Abstract: In a sintered glass ceramic product including at least three layers each of which is formed by a glass ceramic material, the layers are stacked to be substantially symmetrical in a stacking direction and integrally sintered. Among the sintered layers, each of outermost layers and an inner layer adjacent thereto have crystal phases different from each other. Each of the outermost layers and the inner layer have thermal expansion coefficients &agr;1 and &agr;2 selected so that the relationship given by 0<&agr;2−&agr;1<5 ppm is satisfied.Type: GrantFiled: August 20, 2002Date of Patent: March 2, 2004Assignee: Nippon Electric Glass Co., LTDInventors: Yoshio Umayahara, Yoshikatsu Nishikawa, Kazuyoshi Shindo
-
Patent number: 6649550Abstract: The present invention provides a glass ceramics dielectric material, comprising: a crystallizable glass powder in an amount of from 40% to 100% by mass; and a ceramics powder in an amount of from 0% to 60% by mass, wherein the crystallizable glass powder comprises: SiO2 in an amount of from 35% to 65% by mass; CaO in an amount of from 10% to 30% by mass; MgO in an amount of from 10% to 20% by mass; and ZnO in an amount of from 0.5% to 35% by mass, and wherein the material is capable of forming: diopside, CaMgSi2O6, as crystals; and at least one of hardestnite, Ca2ZnSiO7, and willemite, Zn2SiO4, as crystals; and a sintered glass ceramics, comprising: diopside, CaMgSi2O6, as crystals; and at least one of hardestnite, Ca2ZnSiO7, and willemite, Zn2SiO4, as crystals.Type: GrantFiled: November 16, 2001Date of Patent: November 18, 2003Assignee: Nippon Electric Glass Co., Ltd.Inventors: Yoshio Umayahara, Yoshikatsu Nishikawa
-
Publication number: 20030166448Abstract: Glass powder for a dielectric material has a nature that, when fired, diopside (CaMgSi2O6) and at least one of titanite (CaTi(SiO4)O) and titania (TiO2) are precipitated. Preferably, the glass powder has a composition including SiO2, CaO, MgO, and TiO2 and the total content of these components is 80 mass % or more. Preferably, the glass powder comprises, by mass percent, 35-65% SiO2, 10-30% CaO, 10-20% MgO, and 12-30% TiO2.Type: ApplicationFiled: March 4, 2003Publication date: September 4, 2003Applicant: NIPPON ELECTRIC GLASS CO., LTD.Inventors: Yoshikatsu Nishikawa, Yoshio Umayahara
-
Publication number: 20030113554Abstract: In a sintered glass ceramic product including at least three layers each of which is formed by a glass ceramic material, the layers are stacked to be substantially symmetrical in a stacking direction and integrally sintered. Among the sintered layers, each of outermost layers and an inner layer adjacent thereto have crystal phases different from each other. Each of the outermost layers and the inner layer have thermal expansion coefficients &agr;1 and &agr;2 selected so that the relationship given by 0<&agr;2−&agr;1<5 ppm is satisfied.Type: ApplicationFiled: August 20, 2002Publication date: June 19, 2003Applicant: NIPPON ELECTRIC GLASS CO., LTD.Inventors: Yoshio Umayahara, Yoshikatsu Nishikawa, Kazuyoshi Shindo
-
Publication number: 20020091058Abstract: The present invention provides a glass ceramics dielectric material, comprising: a crystallizable glass powder in an amount of from 40% to 100% by mass; and a ceramics powder in an amount of from 0% to 60% by mass, wherein the crystallizable glass powder comprises: SiO2 in an amount of from 35% to 65% by mass; CaO in an amount of from 10% to 30% by mass; MgO in an amount of from 10% to 20% by mass; and ZnO in an amount of from 0.5% to 35% by mass, and wherein the material is capable of forming: diopside, CaMgSi2O6, as crystals; and at least one of hardestnite, Ca2ZnSiO7, and willemite, Zn2SiO4, as crystals; and a sintered glass ceramics, comprising: diopside, CaMgSi2O6, as crystals; and at least one of hardestnite, Ca2ZnSiO7, and willemite, Zn2SiO4, as crystals.Type: ApplicationFiled: November 16, 2001Publication date: July 11, 2002Inventors: Yoshio Umayahara, Yoshikatsu Nishikawa