Abstract: A PZT-film laminated structure includes a substrate, a lower electrode on the substrate, an orientation control layer on the lower electrode, a PZT layer on the orientation control layer, and an upper electrode on the PZT layer. The PZT layer has a (100) or (001) main orientation in which a peak intensity of PZT (100) or (001) is 90% or greater relative to a peak intensity of all PZT peaks in an X-ray diffraction measurement. A ratio of a total value of a secondary ion intensity of Cl relative to a total value of a secondary ion intensity of Ti in the PZT layer is equal to or smaller than 0.03 when the secondary ion intensity of Cl and the secondary ion intensity of Ti in the PZT layer are measured in a direction of thickness of the PZT layer with a magnetic-field secondary ion mass spectrometry.

Abstract: An electronic device includes a substrate; a first thin-film element formed on the substrate and having a lower electrode, a first upper electrode and a first thin-film part disposed between the lower electrode and the first upper electrode; and a second thin-film element formed on the substrate and having the lower electrode, a second upper electrode and a second thin-film part disposed between the lower electrode and the second upper electrode. Film thicknesses of the first and second thin-film parts are different from each other. The first thin-film part is formed by applying a precursor solution using a printing method to form a first precursor thin-film and imparting energy to the first precursor thin-film, and the second thin-film part is formed by applying the precursor solution using the printing method to form a second precursor thin-film and imparting energy to the second precursor thin-film.

Abstract: A PZT precursor solution is used for forming a PZT film by a sol-gel method. The PZT precursor solution includes a solvent; a component that forms a crystal of PZT by crystallization, the component being dissolved in the solvent; and an element that inhibits crystal growth of PZT, the element being dissolved in the solvent.

Abstract: A PZT precursor solution is used for forming a PZT film by a sol-gel method. The PZT precursor solution includes a solvent; a component that forms a crystal of PZT by crystallization, the component being dissolved in the solvent; and an element that inhibits crystal growth of PZT, the element being dissolved in the solvent.

Abstract: A PZT-film laminated structure includes a substrate, a lower electrode on the substrate, an orientation control layer on the lower electrode, a PZT layer on the orientation control layer, and an upper electrode on the PZT layer. The PZT layer has a (100) or (001) main orientation in which a peak intensity of PZT (100) or (001) is 90% or greater relative to a peak intensity of all PZT peaks in an X-ray diffraction measurement. A ratio of a total value of a secondary ion intensity of Cl relative to a total value of a secondary ion intensity of Ti in the PZT layer is equal to or smaller than 0.03 when the secondary ion intensity of Cl and the secondary ion intensity of Ti in the PZT layer are measured in a direction of thickness of the PZT layer with a magnetic-field secondary ion mass spectrometry.

Abstract: A method of manufacturing an electromechanical transducer includes forming a first electrode on a substrate or a base film, forming a piezoelectric film made of lead zirconate titanate on the first electrode, forming a second electrode on the piezoelectric film, and polarizing the piezoelectric film. The polarizing includes applying to the second electrode a positive polarity voltage having a positive polarity relative to a potential of the first electrode, and satisfying a first expression of ?EcP?(?Ec)<0 and a second expression of |?EcP?(?Ec)|>0.15×EcPav, where ?Ec represents an initial coercive field of a negative polarity side of the electromechanical transducer, ?EcP represents a coercive field of the negative polarity side after the applying, EcP represents a coercive field of a positive polarity side after the applying, and EcPav represents an average of absolute values of the coercive field ?EcP and the coercive field EcP.

Abstract: A complex oxide includes a chemical compound represented by ABO3 (Chemical Formula 1). In the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn. When a field having a size of 1 ?m×1 ?m on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm. Here, the typical particle size is a maximum length of a maximum particle observed in the field.

Abstract: An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions.

Abstract: A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film.

Abstract: A method of manufacturing an electromechanical transducer includes forming a first electrode on a substrate or a base film, forming a piezoelectric film made of lead zirconate titanate on the first electrode, forming a second electrode on the piezoelectric film, and polarizing the piezoelectric film. The polarizing includes applying to the second electrode a positive polarity voltage having a positive polarity relative to a potential of the first electrode, and satisfying a first expression of ?EcP?(?Ec)<0 and a second expression of |?EcP?(?Ec)|>0.15×EcPav, where ?Ec represents an initial coercive field of a negative polarity side of the electromechanical transducer, ?EcP represents a coercive field of the negative polarity side after the applying, EcP represents a coercive field of a positive polarity side after the applying, and EcPav represents an average of absolute values of the coercive field ?EcP and the coercive field EcP.

Abstract: An electronic device includes a substrate; a first thin-film element formed on the substrate and having a lower electrode, a first upper electrode and a first thin-film part disposed between the lower electrode and the first upper electrode; and a second thin-film element formed on the substrate and having the lower electrode, a second upper electrode and a second thin-film part disposed between the lower electrode and the second upper electrode. Film thicknesses of the first and second thin-film parts are different from each other. The first thin-film part is formed by applying a precursor solution using a printing method to form a first precursor thin-film and imparting energy to the first precursor thin-film, and the second thin-film part is formed by applying the precursor solution using the printing method to form a second precursor thin-film and imparting energy to the second precursor thin-film.

Abstract: Disclosed is an electromechanical transducer element including a first electrode disposed on a substrate; an electromechanical transducer film disposed on a first portion of the first electrode; and a second electrode disposed on a second portion of the electromechanical transducer film, wherein an actuator portion formed by laminating the substrate, the first electrode, the electromechanical transducer film, and the second electrode has a stiffness such that, in a cross section of the actuator portion, the stiffness gradually increases from an end portion of the actuator portion to a center portion of the actuator portion.

Abstract: A disclosed inkjet head includes a liquid chamber formed by a space between a vibrating plate and a nozzle substrate and separated by partitions; a piezoelectric element formed by sequentially laminating a common electrode, a piezoelectric substance and an individual electrode over the space; first to fourth insulating films respectively having first to fourth openings; and a first wiring connected to the individual electrode and pulled through the first and second openings over the common electrode, wherein the first wiring passes through the third opening over the third insulating film, the first wiring is exposed from the fourth opening so as to be externally connected, and the third insulating film and the fourth insulating film are not partly formed above the liquid chamber and formed above the first wiring.

Abstract: An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions.

Abstract: A complex oxide includes a chemical compound represented by ABO3 (Chemical Formula 1). In the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn. When a field having a size of 1 ?m×1 ?m on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm. Here, the typical particle size is a maximum length of a maximum particle observed in the field.

Abstract: A thin-film forming apparatus for forming a thin film on a substrate by using an ink-jet method includes an ink applying unit that applies an ink drop for thin-film formation to a predetermined area on a surface of the substrate; at least one laser light source for heating the ink drop thereby forming a thin film; and a laser-light irradiating unit that irradiates, with a laser light from the laser light source, a first spot positioned on a back side of the predetermined area of the substrate to which the ink drop has been applied.

Abstract: Disclosed is an electromechanical conversion element, including an electromechanical conversion film including a PZT, an upper electrode formed on a top of the electromechanical conversion film and including a first strontium ruthenium oxide, and a lower electrode formed on a bottom of the electromechanical conversion film and including a second strontium ruthenium oxide, wherein Sr-pzt/Sr-sr?0.01, wherein Sr-pzt is a SIMS intensity for a secondary ion of strontium of the PZT at a position of ½ of a thickness of the electromechanical conversion film and Sr-sr is a SIMS intensity for a secondary ion of strontium of the second strontium ruthenium oxide at a position of ½ of a thickness of the lower electrode.

Abstract: Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ?Pb=Pb(avg)?Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent.

Abstract: A sol-gel liquid for use in forming an individualized electromechanical conversion film of an electromechanical conversion element by inkjet methods, including a lead zirconate titanate (PZT) or the PZT and other metal complex oxides; and an organic solvent having properties surrounded by A, B, C, D, E and F in triangular composition diagram of FIG. 3, and having a viscosity of from 3 to 13 mPa·s, a surface tension of 30±5 mN/m and a dehydration rate of from 70 to 80% relative to pure water.

Abstract: A method of producing an electromechanical transducer includes a first step of partially modifying a surface of a first electrode; a second step of applying a sol-gel liquid including a metal composite oxide to a predetermined area of the partially-modified surface of the first electrode; a third step of performing drying, thermal decomposition, and crystallization on the applied sol-gel liquid to form an electromechanical transduction film, wherein the drying includes a heat-treatment at 120° C., the decomposition includes thermal decomposition performed at 500° C., and the crystallization includes heat treatment for crystallization at 700° C.; a fourth step of repeating the first, second, and third steps to obtain the electromechanical transduction film with a desired thickness; and a fifth step of forming a second electrode on the electromechanical transduction film.