Abstract: An inkjet printing head 1 includes a pressure chamber 5, a movable film formation layer 10 that includes a movable film 10A defining a top surface portion of the pressure chamber 5, and a piezoelectric element 6 that is formed to contact a surface of the movable film 10A at an opposite side from the pressure chamber 5 and having a peripheral edge receded further toward an interior of the pressure chamber 5 than the movable film 10A in plan view. The piezoelectric element 6 includes a lower electrode 7 formed on a surface of the movable film formation layer 10 at the opposite side from the pressure chamber 5, an upper electrode 9 disposed at an opposite side from the movable film formation layer 10 with respect to the lower electrode 7, and a piezoelectric film 8 provided between the upper electrode 9 and the lower electrode 7, and the upper electrode 9 has a thin portion 92 at least at a portion of a peripheral edge portion.

Abstract: A transducer includes a supporting body that has a cavity, a vibrating film that is provided facing the cavity and capable of vibrating in the facing direction, and a piezoelectric element at least a portion of which is formed on a front surface of the vibrating film at an opposite side to the cavity. The vibrating film has, at a portion of an outer peripheral edge of the vibrating film, a connection portion connected to the supporting body and the vibrating film has a non-line-symmetrical shape with respect to a straight line that extends along the front surface of the vibrating film and is orthogonal to a line joining both ends of the connection portion.

Abstract: An inkjet print head includes an actuator substrate that has an ink flow passage including a pressure chamber, a movable film formation layer that includes a movable film disposed on the pressure chamber and demarcating a top surface portion of the pressure chamber, a piezoelectric element that includes a lower electrode disposed on the movable film, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, a hydrogen barrier film that covers at least entire side surfaces of the upper electrode and the piezoelectric film among surfaces of the piezoelectric element, an interlayer insulating film that is formed on the movable film formation layer such as to cover the hydrogen barrier film, and a wiring that is formed on the interlayer insulating film and is connected to the piezoelectric element and a fuse is inserted in an intermediate portion of the wiring.

Abstract: A transducer includes a substrate containing silicon and a piezoelectric element disposed on the substrate. The substrate includes a film body including a first surface and a second surface facing in mutually opposite directions in a thickness direction of the substrate and a frame body surrounding the film body when the film body is viewed from the thickness direction. The piezoelectric element is disposed on the first surface of the film body. A part of an outer edge of the film body when viewed from the thickness direction forms a connection portion connected to the frame body, and a remaining part of the outer edge excluding the connection portion is separated from the frame body. The substrate includes a protrusion protruding in the thickness direction from a region including at least a part of the remaining part of the outer edge of the second surface.

Abstract: The invention described herein relates to oral dosage form therapies for treating metabolic disorders using combinations of inhibitors of SGLT1 and SGLT2. In such dosage forms, SGLT1 is effective in the intestinal lumen, and is either not absorbed, or poorly absorbed, while the SGLT2 inhibitor inhibits sugar reabsorption in the kidney by inhibiting SGLT2 activity. Metabolic disorders treated by combined SGLT1 and SGLT2 oral dosage forms include disorders associated with abnormal accumulation of liver lipids, which may also be copresent with hyperglycemia.

Abstract: An inkjet printing head 1 includes a pressure chamber 5, a movable film formation layer 10 that includes a movable film 10A defining a top surface portion of the pressure chamber 5, and a piezoelectric element 6 that is formed to contact a surface of the movable film 10A at an opposite side from the pressure chamber 5 and having a peripheral edge receded further toward an interior of the pressure chamber 5 than the movable film 10A in plan view. The piezoelectric element 6 includes a lower electrode 7 formed on a surface of the movable film formation layer 10 at the opposite side from the pressure chamber 5, an upper electrode 9 disposed at an opposite side from the movable film formation layer 10 with respect to the lower electrode 7, and a piezoelectric film 8 provided between the upper electrode 9 and the lower electrode 7, and the upper electrode 9 has a thin portion 92 at least at a portion of a peripheral edge portion.

Abstract: An inkjet printing head includes a piezoelectric element having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film, a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film, and an interlayer insulating film that has an opening at an upper surface center of the upper electrode, is laminated on the hydrogen barrier film, and faces the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film.

Abstract: An inkjet printing head includes a piezoelectric element having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film, a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film, and an interlayer insulating film that has an opening at an upper surface center of the upper electrode, is laminated on the hydrogen barrier film, and faces the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film.

Abstract: An inkjet printing head 1 includes a piezoelectric element 6 having a lower electrode 7, a piezoelectric film 8 formed above the lower electrode 7, and an upper electrode 9 formed above the piezoelectric film 8, a hydrogen barrier film 13 covering an entirety of a side surface of the upper electrode 9 and the piezoelectric film 8, and an interlayer insulating film 14 that has an opening 17 at an upper surface center of the upper electrode 9, is laminated on the hydrogen barrier film 13, and faces the entirety of the side surface of the upper electrode 9 and the piezoelectric film 8 across the hydrogen barrier film 13.

Abstract: A resist mask 40, having penetrating holes 41, is formed on a rear surface of a silicon substrate 2. A planar shape of each penetrating hole 41 is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity 3. Next, dry etching is applied to the silicon substrate 2. The cavities 3 are thereby formed in the silicon substrate 2. As the etching progresses, a transverse sectional shape of each cavity 3 decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole 41 of the resist mask 40. At a processing ending end side of the cavity 3, its planar shape is substantially the same shape as the regular quadrilateral that is the target shape.

Abstract: A resist mask 40, having penetrating holes 41, is formed on a rear surface of a silicon substrate 2. A planar shape of each penetrating hole 41 is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity 3. Next, dry etching is applied to the silicon substrate 2. The cavities 3 are thereby formed in the silicon substrate 2. As the etching progresses, a transverse sectional shape of each cavity 3 decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole 41 of the resist mask 40. At a processing ending end side of the cavity 3, its planar shape is substantially the same shape as the regular quadrilateral that is the target shape.

Abstract: An inkjet printing head 1 includes a piezoelectric element 6 having a lower electrode 7, a piezoelectric film 8 formed above the lower electrode 7, and an upper electrode 9 formed above the piezoelectric film 8, a hydrogen barrier film 13 covering an entirety of a side surface of the upper electrode 9 and the piezoelectric film 8, and an interlayer insulating film 14 that has an opening 17 at an upper surface center of the upper electrode 9, is laminated on the hydrogen barrier film 13, and faces the entirety of the side surface of the upper electrode 9 and the piezoelectric film 8 across the hydrogen barrier film 13.

Abstract: A counter includes: a count processing circuit including a nonvolatile register; a regulator receiving voltage from a direct current power supply, generating power supply voltage based on the received voltage for the count processing circuit, and supplying the power supply voltage to the count processing circuit; and a delay circuit receiving the power supply voltage and supplying a count signal to the count processing circuit after the power supply voltage is supplied to the count processing circuit. After having received the power supply voltage from the regulator, the count processing circuit updates a count value in response to the count signal and holds the updated count value in the nonvolatile register in a non-volatile manner.

Abstract: A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in which one or more oxide conductive layers and one or more metal layers are stacked alternately, and the stacked electrode structure includes at least one of two or more oxide conductive layers and two or more metal layers.

Abstract: Provided is a nonvolatile storage gate embedded logic circuit embedding a nonvolatile storage gate which can hold data after power supply cutoff and can cut off a power supply at the same time shifting into a standby state. The nonvolatile storage gate embedded logic circuit includes a logic calculation unit having a logic gate, and a nonvolatile storage gate having a nonvolatile storage element, a data interface control unit disposed so as to be adjoining to the nonvolatile storage element, and receiving a nonvolatile storage control signal for data read-out from the nonvolatile storage element and data write-in to the nonvolatile storage element, and a volatile storage element disposed so as to be adjoining to the nonvolatile storage element, receiving a data input signal and a clock signal, and outputting a data output signal.

Abstract: A data holding device includes a loop structure unit configured to hold data using a plurality of logic gates connected in a loop shape, a nonvolatile storage unit including a plurality of ferroelectric elements, the nonvolatile storage unit configured to store the data held in the loop structure unit in a nonvolatile manner using hysteresis characteristics of the ferroelectric elements, and a circuit separation unit configured to electrically separate the loop structure unit and the nonvolatile storage unit. The ferroelectric elements of the nonvolatile storage unit are surrounded by a dummy element smaller in width than the ferroelectric elements.

Abstract: A data holding device includes a loop structure unit configured to hold data using a plurality of logic gates connected in a loop shape, a nonvolatile storage unit including a plurality of ferroelectric elements, the nonvolatile storage unit configured to store the data held in the loop structure unit in a nonvolatile manner using hysteresis characteristics of the ferroelectric elements, and a circuit separation unit configured to electrically separate the loop structure unit and the nonvolatile storage unit. The ferroelectric elements of the nonvolatile storage unit are surrounded by a dummy element smaller in width than the ferroelectric elements.

Abstract: The present invention provides pharmaceutical compositions useful as agents for the inhibition of progression of diseases associated with abnormal accumulation of liver lipids. In particular, the pharmaceutical compositions of the present invention which comprise as an active ingredient a sodium/glucose co-transporter 2 inhibitor are highly suitable as an agent for the inhibition of progression of not only common fatty liver but also non-alcoholic fatty liver disease (NAFL), non-alcoholic steatohepatitis (NASH), hypernutritive fatty liver, diabetic fatty liver, alcoholic fatty liver disease toxic fatty liver or the like.

Abstract: A data holding device includes a loop structure unit configured to hold data using a plurality of logic gates connected in a loop shape, a nonvolatile storage unit including a plurality of ferroelectric elements, the nonvolatile storage unit configured to store the data held in the loop structure unit in a nonvolatile manner using hysteresis characteristics of the ferroelectric elements, and a circuit separation unit configured to electrically separate the loop structure unit and the nonvolatile storage unit. The ferroelectric elements of the nonvolatile storage unit are surrounded by a dummy element smaller in width than the ferroelectric elements.

Abstract: A data holding device includes a loop structure unit configured to hold data using a plurality of logic gates connected in a loop shape, a nonvolatile storage unit including a plurality of ferroelectric elements, the nonvolatile storage unit configured to store the data held in the loop structure unit in a nonvolatile manner using hysteresis characteristics of the ferroelectric elements, and a circuit separation unit configured to electrically separate the loop structure unit and the nonvolatile storage unit. The ferroelectric elements of the nonvolatile storage unit are surrounded by a dummy element smaller in width than the ferroelectric elements.