Abstract: A semiconductor device includes a metal layer disposed above a transistor on a first substrate. The metal layer includes a first region extending in a first direction and a second region that has a width in the first direction smaller than the first region and protrudes from the first region in a second direction, and has a first corner portion having an angle larger than 180° as viewed in a third direction between a proximal end portion of the second region and the first region. The metal layer includes a first portion that is disposed within the first region and has a lower surface at a first height, and a second portion that is disposed within the second region and has a lower surface at a second height lower than the first height.

Abstract: A semiconductor memory device comprises a first memory cell and a second memory cell. The semiconductor memory device is configured to be able to perform: a first operation which is a read operation or the like to the first memory cell; and a second operation which is a read operation or the like to the second memory cell. The semiconductor memory device transitions to a standby mode after performing the first operation in response to an input of a first command set and a second command set. The semiconductor memory device performs a charge share operation after the standby mode is released in response to an input of a third command set and a fourth command set during the standby mode. The semiconductor memory device performs the second operation using at least a part of an electric charge generated when the first operation is performed.

Abstract: A semiconductor storage device includes a memory cell array having a plurality of first conductive layers stacked in a first direction and a plurality of memory cells connected to the plurality of first conductive layers, a wiring layer, and an insulating layer between the memory cell array and the wiring layer and separating the memory cell array and the wiring layer in a second direction intersecting the first direction. The wiring layer includes a plurality of second conductive layers stacked in the first direction, each of the second conductive layers having a corresponding first conductive layer at a same layer, and a contact connected to at least a part of the plurality of second conductive layers and extending in the first direction.

Abstract: According to the present embodiment, a semiconductor memory device includes a first memory bunch including a first source line, a first source side selecting gate transistor, a first source side selecting gate line, a plurality of first non-volatile memory cells, a plurality of first word lines, a first drain side selecting gate transistor, a first drain side selecting gate line, and a first bit line; a second memory bunch including, a second source line, a second source side selecting gate transistor, a second source side selecting gate line, a plurality of second non-volatile memory cells, a plurality of second word lines, a second drain side selecting gate transistor, a second drain side selecting gate line, and a second bit line; a common bit line; a first bit line transfer transistor; and a second bit line transfer transistor.

Abstract: According to the present embodiment, a semiconductor memory device includes a first memory bunch including a first source line, a first source side selecting gate transistor, a first source side selecting gate line, a plurality of first non-volatile memory cells, a plurality of first word lines, a first drain side selecting gate transistor, a first drain side selecting gate line, and a first bit line; a second memory bunch including, a second source line, a second source side selecting gate transistor, a second source side selecting gate line, a plurality of second non-volatile memory cells, a plurality of second word lines, a second drain side selecting gate transistor, a second drain side selecting gate line, and a second bit line; a common bit line; a first bit line transfer transistor; and a second bit line transfer transistor.

Abstract: A semiconductor storage device has a sense amplifier.

Abstract: A semiconductor device includes first to third lines. The second line has a width equal to the first line. The second line is arranged with a space equal to the width from the first line, and partially has a gap. The third line is connected to one end of the first line and to a side of one end of the second line.

Abstract: A semiconductor storage device has a sense amplifier.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: a memory cell array having: a cell string including a plurality of memory cells connected in series; a plurality of word lines respectively connected to the plurality of memory cells; a source side selecting gate connected to one end of the cell string; and a drain side selecting gate connected to the other end of the cell string; a word line selector that selects one of the word lines connected to a target memory cell to be written; and an equalizing unit that equalizes voltages of the plurality of word lines after data write of the target memory cell is finished.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: a memory cell array having: a cell string including a plurality of memory cells connected in series; a plurality of word lines respectively connected to the plurality of memory cells; a source side selecting gate connected to one end of the cell string; and a drain side selecting gate connected to the other end of the cell string; a word line selector that selects one of the word lines connected to a target memory cell to be written; and an equalizing unit that equalizes voltages of the plurality of word lines after data write of the target memory cell is finished.