Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Abstract: A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

Abstract: A film-forming method for forming a metal nitride film on a substrate includes: forming the metal nitride film on the substrate by repeating a cycle a predetermined number of times, the cycle including: a first process of supplying a metal-containing gas into a process container configured to accommodate the substrate therein; a second process of supplying a purge gas into the process container; a third process of supplying a nitrogen-containing gas into the process container; and a fourth process of supplying the purge gas into the process container, wherein the fourth process includes: a first step of supplying a first purge gas having a first flow rate equal to or larger than a flow rate of the metal-containing gas of the first process; and a second step of supplying the first purge gas having a second flow rate smaller than the first flow rate.

Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Abstract: Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of the chamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.