Patents by Inventor Yoshikazu Kagata

Yoshikazu Kagata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film
    Patent number: 5221412
    Abstract: The present invention provides a process for the vapor-phase epitaxial growth of a Si single crystal film on a Si single crystal substrate using diluted disilane, in which the process is carried out at a linear speed of diluted disilane on the surface of the Si single crystal substrate is in the range of 5 to 100 cm/min. and, as desired, the substrate is subjected to the heat pretreatment in a hydrogen stream at a temperature of 1,000.degree. C. or higher for a period of 30 minutes or longer before the epitaxial growth.
    Type: Grant
    Filed: September 26, 1990
    Date of Patent: June 22, 1993
    Assignee: Toagosei Chemical Industry Co., Ltd.
    Inventors: Yoshikazu Kagata, Katsuyoshi Harada