Abstract: The semiconductor laser module 1 has an electrically conductive heat sink 10, a submount 20 disposed above the heat sink 10, a semiconductor laser device 30 disposed above the submount 20, a lower solder layer 50 disposed between the heat sink 10 and the submount 20, and an upper solder layer 60 electrically connected to the semiconductor laser device 30 and the heat sink 10. This upper solder layer 60 has an electric resistivity lower than an electric resistivity of the submount 20 and extends along surfaces 21 and 22 of the submount 20 to the heat sink 10.

Abstract: The semiconductor laser module 1 has an electrically conductive heat sink 10, a submount 20 disposed above the heat sink 10, a semiconductor laser device 30 disposed above the submount 20, a lower solder layer 50 disposed between the heat sink 10 and the submount 20, and an upper solder layer 60 electrically connected to the semiconductor laser device 30 and the heat sink 10. This upper solder layer 60 has an electric resistivity lower than an electric resistivity of the submount 20 and extends along surfaces 21 and 22 of the submount 20 to the heat sink 10.

Abstract: An optical device includes: a plurality of optical components arranged along a first direction, each optical component having an optical surface, a first surface intersecting with the optical surface, and a second surface intersecting with the optical surface and the first surface; and a base member that integrally holds the plurality of the optical components and has a first holding surface and a second holding surface, the first holding surface holding the optical components and fixing positions of the optical components in a second direction intersecting with the first direction in a state of being in contact with the optical components on the first surface, the second holding surface holding the second surface of the optical components with an adhesive interposed therebetween and fixing positions of the optical components in a third direction intersecting with the first direction and the second direction.

Abstract: An optical device includes: a plurality of optical components arranged along a first direction, each optical component having an optical surface, a first surface intersecting with the optical surface, and a second surface intersecting with the optical surface and the first surface; and a base member that integrally holds the plurality of the optical components and has a first holding surface and a second holding surface, the first holding surface holding the optical components and fixing positions of the optical components in a second direction intersecting with the first direction in a state of being in contact with the optical components on the first surface, the second holding surface holding the second surface of the optical components with an adhesive interposed therebetween and fixing positions of the optical components in a third direction intersecting with the first direction and the second direction.

Abstract: A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10?4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.

Abstract: A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10?4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.