Abstract: A semiconductor integrated circuit including: a substrate of a first conductivity type; a buried insulating film provided on the substrate; an active layer of the first conductivity type provided on the buried insulating film; a first impurity region of a second conductivity type formed within the active layer; an electric field relaxation layer of the second conductivity type formed within the active layer and surrounding the first impurity region; a second impurity region of the first conductivity type formed within the active layer and surrounding the electric field relaxation layer; and a groove formed surrounding the second impurity region and reaching the buried insulating film.

Abstract: A terminal holding structure includes a detection terminal having a through hole penetrating in an attaching direction to an object to be conductively connected, a resin case including an insertion portion to be inserted into the through hole and configured to hold the detection terminal, and a restricting member configured to restrict movement of the detection terminal in the attaching direction.

Abstract: A semiconductor memory device comprises a first memory cell and a second memory cell. The semiconductor memory device is configured to be able to perform: a first operation which is a read operation or the like to the first memory cell; and a second operation which is a read operation or the like to the second memory cell. The semiconductor memory device transitions to a standby mode after performing the first operation in response to an input of a first command set and a second command set. The semiconductor memory device performs a charge share operation after the standby mode is released in response to an input of a third command set and a fourth command set during the standby mode. The semiconductor memory device performs the second operation using at least a part of an electric charge generated when the first operation is performed.

Abstract: A semiconductor device including a protected element, a contact region, wiring, and a channel stopper region. The protected element is configured including a p-n junction diode between an anode region and a cathode region, and is arranged in an active layer of a substrate. The periphery of the diode is surrounded by an element isolation region. The contact region is arranged at a portion on a main face of the anode region, and is set with a same conductivity type as the anode region, and set with a higher impurity concentration than the anode region. The wiring is arranged over the diode. One end portion of the wiring is connected to the contact region and another end portion extends over a passivation film. The channel stopper region is arranged at a portion on the main face of the anode region under the wiring between the contact region and the element isolation region, and is set with an opposite conductivity type to the contact region.

Abstract: A semiconductor integrated circuit including: a substrate of a first conductivity type; a buried insulating film provided on the substrate; an active layer of the first conductivity type provided on the buried insulating film; a first impurity region of a second conductivity type formed within the active layer; an electric field relaxation layer of the second conductivity type formed within the active layer and surrounding the first impurity region; a second impurity region of the first conductivity type formed within the active layer and surrounding the electric field relaxation layer; and a groove formed surrounding the second impurity region and reaching the buried insulating film.

Abstract: A semiconductor device including a protected element, an element isolation region, a contact region, and a shield region. The protected element is configured including a p-n junction diode between an anode region and a cathode region, and is arranged in an active layer of a substrate. A periphery of the diode is surrounded by the element isolation region. The contact region is arranged at a portion on a main face of the anode region, is set with a same conductivity type as the anode region, and is set with a higher impurity concentration than the anode region. The shield region is arranged between the cathode region and the contact region so as to extend from the main face of the anode region as far as a region deeper than a depth of the contact region and shallower than the anode region. The shield region is configured including a semiconductor region with an opposite conductivity type to the anode region.

Abstract: A semiconductor device includes a protected element and a connection section. The protected element is configured including a diode having an anode region and a cathode region. The diode is arranged on an active layer of a substrate including the active layer formed over a conductive substrate-support with an insulation layer interposed therebetween. The connection section electrically connects the cathode region of the protected element to the substrate-support.

Abstract: A semiconductor device includes a protected element and a connection section. The protected element is configured including a diode having an anode region and a cathode region. The diode is arranged on an active layer of a substrate including the active layer formed over a conductive substrate-support with an insulation layer interposed therebetween. The connection section electrically connects the cathode region of the protected element to the substrate-support.

Abstract: A semiconductor device including a protected element, an element isolation region, a contact region, and a shield region. The protected element is configured including a p-n junction diode between an anode region and a cathode region, and is arranged in an active layer of a substrate. A periphery of the diode is surrounded by the element isolation region. The contact region is arranged at a portion on a main face of the anode region, is set with a same conductivity type as the anode region, and is set with a higher impurity concentration than the anode region. The shield region is arranged between the cathode region and the contact region so as to extend from the main face of the anode region as far as a region deeper than a depth of the contact region and shallower than the anode region. The shield region is configured including a semiconductor region with an opposite conductivity type to the anode region.

Abstract: A semiconductor device including a protected element, an element isolation region, a contact region, and an insulating shield body. The protected element is configured including a p-n junction diode between an anode region and a cathode region, and is arranged in an active layer of a substrate. A periphery of the diode is surrounded by the element isolation region. The contact region is arranged at a portion on a main face of the anode region, is set with a same conductivity type as the anode region, and is set with a higher impurity concentration than the anode region. The insulating shield body has insulating properties and is arranged between the cathode region and the contact region so as to extend from the main face of the anode region as far as a region deeper than a depth of the contact region and shallower than the anode region.

Abstract: A semiconductor device including a protected element, a contact region, wiring, and a channel stopper region. The protected element is configured including a p-n junction diode between an anode region and a cathode region, and is arranged in an active layer of a substrate. The periphery of the diode is surrounded by an element isolation region. The contact region is arranged at a portion on a main face of the anode region, and is set with a same conductivity type as the anode region, and set with a higher impurity concentration than the anode region. The wiring is arranged over the diode. One end portion of the wiring is connected to the contact region and another end portion extends over a passivation film. The channel stopper region is arranged at a portion on the main face of the anode region under the wiring between the contact region and the element isolation region, and is set with an opposite conductivity type to the contact region.

Abstract: A semiconductor device includes a protected element, an element isolation region, and a first connection section. The protected element is configured including a diode between an anode region and a cathode region, and is arranged in an active layer of a substrate including the active layer formed over a conductive substrate-support with an insulation layer interposed between the active layer and the substrate-support. The element isolation region includes a trench, an insulation body, and a conductor. The trench extends from a surface of the active layer as far as the insulation layer and surrounds a periphery of the diode. The insulation body is arranged on a side wall of the trench. The conductor fills the trench such that the insulation body is interposed between the conductor and the trench. The first connection section electrically connects the cathode region of the diode and the conductor of the element isolation region.

Abstract: A rotational movement detection device includes a rotating member including a through hole passing therethrough from a first surface to a second surface opposite the first surface, the rotating member rotating around the through hole to generate a magnetic field around the rotating member, a rotation angle detection part that detects a rotation angle of the rotating member, a movement detection part that detects a movement along a rotational axis of the rotating member, and a holding part including a guide part and an arrangement part formed integrally therein, the guide part being inserted into the through hole to guide the rotation of the rotating member and to hold the rotating member, the arrangement part having thereon the movement detection part arranged facing a side surface of the rotating member.

Abstract: A rotational movement detection device includes a rotating member including a through hole passing therethrough from a first surface to a second surface opposite the first surface, the rotating member rotating around the through hole to generate a magnetic field around the rotating member, a rotation angle detection part that detects a rotation angle of the rotating member, a movement detection part that detects a movement along a rotational axis of the rotating member, and a holding part including a guide part and an arrangement part formed integrally therein, the guide part being inserted into the through hole to guide the rotation of the rotating member and to hold the rotating member, the arrangement part having thereon the movement detection part arranged facing a side surface of the rotating member.

Abstract: A spark plug with a center electrode, the center electrode having a small-diameter portion with a noble metal tip joined by laser welding to a front end of the small-diameter portion, a large-diameter portion made larger in diameter than the small-diameter portion and a connection portion connecting the small-diameter portion and the large-diameter portion to each other. In this spark plug, the following conditions (1), (2) and (3) are satisfied: Dg?2.6??(1) 1.15?Lc+Ls?3.0??(2) 0.48?Ls/(Lc+Ls)?0.75??(3) where Dg (mm) is a diameter of the large-diameter portion; Lc (mm) is a length of the noble metal tip in an axis direction of the spark plug; and Ls (mm) is a length of the small-diameter portion in the axis direction of the spark plug.

Abstract: A spark plug wherein an outer diameter of a first face that is a gap foliating face of the center electrode tip is denoted as R1, an outer diameter of a second face that is a gap forming face of the ground electrode tip is denoted as R2, a length of the gap is denoted as G1, and an average distance of a distance between an end in the first direction of the first face and an end in the first direction of the second face and a distance between an end in the second direction of the first face and an end in the second direction of the second face is denoted as G2, R1<R2, 0.5 mm?R1?1.1 mm, 0.7 mm?R2?1.2 mm, 0.6 mm?G1?1.3 mm, and 1.4?(R2/R1)×(G2/G1)?1.8 are satisfied.

Abstract: In a section of a spark plug cut by a plane which passes through the center of gravity of the intermediate member and is in parallel with the facing direction between a center electrode and an extending portion of a ground electrode, a spark plug that satisfies the relational expression S1/(D1×H1)?0.005, where S1 is the total area of nuggets, H1 is the height of the end surface of a noble metal tip from the disposition surface of an electrode base metal, and D1 is the maximum width of the noble metal tip.

Abstract: A spark plug with a center electrode, the center electrode having a small-diameter portion with a noble metal tip joined by laser welding to a front end of the small-diameter portion, a large-diameter portion made larger in diameter than the small-diameter portion and a connection portion connecting the small-diameter portion and the large-diameter portion to each other. In this spark plug, the following conditions (1), (2) and (3) are satisfied: Dg?2.6??(1) 1.15?Lc+Ls?3.0??(2) 0.48?Ls/(Lc+Ls)?0.75??(3) where Dg (mm) is a diameter of the large-diameter portion; Lc (mm) is a length of the noble metal tip in an axis direction of the spark plug; and Ls (mm) is a length of the small-diameter portion in the axis direction of the spark plug.

Abstract: A charging system includes a locking device locking a connector provided at the end of a cable in the state where the connector is connected to an inlet provided in a vehicle; a release button for releasing locking by the locking device; a switch generating a signal indicating that the connector and the inlet are connected; a horn; and an ECU. In response to the operation of the release button, the switch stops generation of the signal. The ECU controls charging of a power storage device and detects whether the signal is issued or not. In the case where the ECU detects that generation of the signal is stopped during charging of the power storage device, the ECU causes the horn to issue an alarm.

Abstract: A spark plug wherein an outer diameter of a first face that is a gap foliating face of the center electrode tip is denoted as R1, an outer diameter of a second face that is a gap forming face of the ground electrode tip is denoted as R2, a length of the gap is denoted as G1, and an average distance of a distance between an end in the first direction of the first face and an end in the first direction of the second face and a distance between an end in the second direction of the first face and an end in the second direction of the second face is denoted as G2, R1<R2, 0.5 mm?R1?1.1 mm, 0.7 mm?R2?1.2 mm, 0.6 mm?G1?1.3 mm, and 1.4?(R2/R1)×(G2/G1)?1.8 are satisfied.