Abstract: A memory control device for controlling a random access memory provides with an arbiter for generating write start and read start signals in response to WRITE and READ commands which are obtained by frequency-dividing writing and reading clock signals, respectively and a memory control circuit comprised of first and second delay circuits for delaying the write start and read start signals by predetermined times, respectively, and first and second RS flip-flop circuits for generating write and read control signals in response to the write start and read start signals, respectively, which are reset by reset signals output from the first and second delay circuits, respectively.

Abstract: In a semiconductor memory device, a memory cell array is separated into at least two portions on a substrate, and a serial memory element, such as a shift register, and control signal lines are collectively disposed between the two memory cell array portions, and by this arrangement, the length of the control signal lines and data lines can be minimized so that the stray or parasitic capacitance is reduced, and a higher speed and stable operation of the device is thereby realized.