Abstract: Provided is a compound semiconductor device that can suppress the deterioration of the element characteristics and a method of manufacturing a compound semiconductor device. The compound semiconductor device includes a laminated body constituted of a compound semiconductor and including a channel layer in which a first conductivity type carrier runs; a gate electrode provided on an upper surface side of the laminated body; a source electrode provided on the upper surface side of the laminated body; and a drain electrode provided on the upper surface side of the laminated body.

Abstract: A semiconductor device including: a substrate in which a first transistor region and a second transistor region are provided; a first channel layer in which a carrier of a first conductivity type travels, the first channel layer being provided over the substrate in the first transistor region and including a compound semiconductor; a first impurity epitaxial layer of a second conductivity type that is provided over the substrate with the first channel layer interposed therebetween, is disposed in a first gate region in a central portion and outside the first gate region, and has a low concentration region in which an electric charge amount per unit length is small as compared to the first gate region; and a second channel layer in which a carrier of the second conductivity type travels, the second channel layer being provided over the substrate in the second transistor region and including a compound semiconductor.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: A substrate holding structure includes a wafer stage having a first main surface and a second main surface opposite to the first main surface. A substrate placing area is defined on the first main surface. The substrate holding structure further includes a static capacity measurement electrode having a center circular electrode and at least one circular ring electrode for measuring a combined capacity among a substrate to be placed in the substrate placing area, the center circular electrode, and the circular ring electrode; at least one temperature measurement unit; an electrode control unit connected to the center circular electrode and the circular ring electrode; a temperature control unit connected to the temperature measurement unit and the temperature adjustment unit; a storage unit; a calculation unit connected to the storage unit; and a control unit connected to the electrode control unit and the temperature control unit.

Abstract: The present invention provides a semiconductor manufacturing apparatus which stabilizes the quality of thickness of a film between solids, which is produced on a wafer in the semiconductor manufacturing apparatus by a CVD method using light, and improves in-plane thickness uniformity to thereby bring about excellent production efficiency. The semiconductor manufacturing apparatus is provided with a gas supply pipe for supplying a material gas to a chamber used to store the wafer placed in the semiconductor manufacturing apparatus, and a transparent plate which is provided in the chamber and allows the light to pass therethrough. The transparent plate is heated by a heater to thereby prevent the production of the film on the transparent plate and control the concentration of a material gas in the vicinity of an object to be processed.

Abstract: In a method of fabricating a protective film, a vacuum ultraviolet radiation CVD (Chemical Vapor Deposition) system is used. The method includes providing a vacuum ultraviolet rays generator, a reactor provided with a platform for supporting a substrate, a heat retainer provided on the platform, and a window separating the vacuum ultraviolet rays generator from the reactor. Then, a step of feeding an organic stock gas from a gas feeder into the reactor while retaining the temperature of the substrate at a temperature of about equal to or less than 100° C. with the heat retainer is performed. Simultaneously, a step of irradiating the reactor with vacuum ultraviolet rays from the vacuum ultraviolet rays generator through the window is performed.

Abstract: A method is used for forming a low relative permittivity dielectric film by a vacuum ultraviolet CVD. The film is a silicon organic film (e.g., SiOCH, SiC, SiCH, and SiOF films) that has a controlled relative permittivity and is formed at temperatures below 350° C. The method can control the content of carbon in the film to achieve a desired relative permittivity. A desired relative permittivity can be achieved by: {circle around (1)} controlling the type and flow rate of added gas (O2, N2O) that contains oxygen atoms; {circle around (2)} controlling the flow rate of TEOS; {circle around (3)} controlling the intensity of light emitted from the excimer lamp; {circle around (4)} elevating the temperatures of the synthetic quartz window and the gas flowing in the vacuum chamber, and controlling the distance between the synthetic quartz window and the wafer; and {circle around (5)} controlling the temperature of the wafer.

Abstract: A water-repelling film is formed by using a vacuum ultraviolet rays chemical vapor deposition (CVD) system (100) comprising a vacuum ultraviolet rays generating section (102), a reaction room (106), and a window (104) for separating the reaction room (106) and the vacuum ultraviolet rays generating section (102). Plasma having an energy larger than 0 eV but smaller than 10 eV and organic material gas are supplied to the reaction room. A substrate (116) in the reaction room (106) is heated to maintain such a temperature as not causing damage on the substrate (116). Vacuum ultraviolet rays is applied from the vacuum ultraviolet rays generating section (102) to the inside of the reaction room (106) through the window (104).

Abstract: A water-repelling film is formed by using a vacuum ultraviolet rays chemical vapor deposition (CVD) system (100) comprising a vacuum ultraviolet rays generating section (102), a reaction room (106), and a window (104) for separating the reaction room (106) and the vacuum ultraviolet rays generating section (102). Plasma having an energy larger than 0 eV but smaller than 10 eV and organic material gas are supplied to the reaction room. A substrate (116) in the reaction room (106) is heated to maintain such a temperature as not causing damage on the substrate (116). Vacuum ultraviolet rays is applied from the vacuum ultraviolet rays generating section (102) to the inside of the reaction room (106) through the window (104).

Abstract: In a method of fabricating a protective film, a vacuum ultraviolet radiation CVD (Chemical Vapor Deposition) system is provided. The system includes a vacuum ultraviolet rays generator, a reactor provided with a platform for supporting a substrate, a heat retainer provided on the platform, and a window separating the vacuum ultraviolet rays generator from the reactor. Then, an organic stock gas is fed from a gas feeder into the reactor while retaining temperature of the substrate at a low temperature with the heat retainer. Simultaneously, the reactor is irradiated with vacuum ultraviolet rays from the vacuum ultraviolet rays generator through the window.

Abstract: In a method for manufacturing a semiconductor device, a semiconductor substrate is provided. On the substrate, conductors spaced apart from one another are formed. Then, an insulating layer is formed on the conductors and the substrate. The insulating layer is formed by a chemical vapor deposition using tetramethylcyclotetrasiloxane as a source gas and oxygen as an adjunction gas. The chemical vapor deposition is performed while the substrate is irradiated by vacuum ultraviolet light. Finally, a part of the insulating layer is removed in a substantial uniform way to form a contact hole through the insulating film.

Abstract: A method of manufacturing an interlayer insulating film that can form an insulating layer having excellent planarization property without using an etch-back process is offered. A method of manufacturing a semiconductor device having a step of forming an interlayer insulating film on an object comprises a step of supplying octa-methylcyclotetrasiloxane as a source gas into a vacuum processing chamber of a vacuum ultraviolet CVD apparatus in which an object on which an interlayer insulating film is to be formed is arranged; and a step of irradiating vacuum ultraviolet light from a vacuum ultraviolet light source arranged on an upper part of the vacuum processing chamber onto the object placed in the vacuum processing chamber to grow an interlayer insulating film.

Abstract: A method of manufacturing an interlayer dielectric film by vacuum ultraviolet CVD including the steps of placing a wafer in a vacuum chamber having a window; causing a first gas that contains silicon atoms to flow through the vacuum chamber; exposing the wafer to light emitted from a Xe2 excimer lamp through the window; and maintaining an atmosphere in the chamber at a first temperature which is less than 350° C. to form an insulating film on the wafer which substantially fills stepped portions of the wafer to provide step coverage and which has a substantially flat top surface.