Patents by Inventor Yoshikazu Nagamura
Yoshikazu Nagamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10861786Abstract: The semiconductor device has a wiring M 2, an interlayer insulating film IL3 formed on the wiring M 2, and two wirings M 3 formed on the interlayer insulating film IL3, and the wiring M 3 is connected to the wiring M 2 by a conductor layer PG2 formed in the interlayer insulating film IL3. A recess CC3 is formed on the upper surface IL3a of the interlayer insulating film IL3, and the recess CC3 is defined by a side surface S 31 connected to the upper surface IL3a and a side surface S 32 connected to the side surface S 31, and the side surface S 32 is inclined so that the width WC3 of the recess CC3 decreases in the direction from the upper surface IL3a of the interlayer insulating film IL3 toward the upper surface IL2a of the interlayer insulating film IL2.Type: GrantFiled: June 19, 2019Date of Patent: December 8, 2020Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Yoshikazu Nagamura, Takashi Ipposhi, Katsumi Eikyu
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Publication number: 20200006222Abstract: The semiconductor device has a wiring M 2, an interlayer insulating film IL3 formed on the wiring M 2, and two wirings M 3 formed on the interlayer insulating film IL3, and the wiring M 3 is connected to the wiring M 2 by a conductor layer PG2 formed in the interlayer insulating film IL3. A recess CC3 is formed on the upper surface IL3a of the interlayer insulating film IL3, and the recess CC3 is defined by a side surface S 31 connected to the upper surface IL3a and a side surface S 32 connected to the side surface S 31, and the side surface S 32 is inclined so that the width WC3 of the recess CC3 decreases in the direction from the upper surface IL3a of the interlayer insulating film IL3 toward the upper surface IL2a of the interlayer insulating film IL2.Type: ApplicationFiled: June 19, 2019Publication date: January 2, 2020Inventors: Yoshikazu NAGAMURA, Takashi IPPOSHI, Katsumi EIKYU
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Patent number: 8156451Abstract: A technique for quantitatively expressing a manufacturing difficulty level of a photomask and for efficiently manufacturing the photomask is provided. A mask manufacturing difficulty level different for each mask layout, product, and mask layer is relatively recognized with a mask manufacturing load index calculated by a mask manufacturing load prediction system, and when layout correction is possible, the final layout is corrected to a layout with a low difficulty level, and a mask ordering party provides a mask manufacturer with information regarding the mask manufacturing difficulty level in an early stage. The mask manufacturing load index is expressed with a defect guarantee load index and a lithography load index.Type: GrantFiled: August 7, 2008Date of Patent: April 10, 2012Assignees: Renesas Electronics Corporation, Dai Nippon Printing Co., Ltd.Inventors: Yoshikazu Nagamura, Shogo Narukawa
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Patent number: 7926010Abstract: A method of determining defects in photomasks according to the present invention is designed to increase the yield of the manufacture of photomasks and to decrease the cost of inspecting the photomasks. In the method, circuit data 1 representing a circuit to be formed on a semiconductor substrate by photolithography is prepared, and layout data 2 is prepared from the circuit data 1. The layout data is converted to compensated layout data by performing RET. Further, mask-manufacturing data is developed from the compensated layout data. To form patterns on a semiconductor substrate by photolithography, attribute information is imparted to the mask-manufacturing data. The attribute information represents whether the patterns are adaptive to electrically active regions or electrically non-active region. In the mask-inspecting process 6, a criterion for determining whether the patterns formed on the photomasks have defects is changed in accordance with the attribute information.Type: GrantFiled: June 2, 2008Date of Patent: April 12, 2011Assignees: Dai Nippon Printing Co., Ltd., Renesas Technology CorpInventors: Shogo Narukawa, Yoshikazu Nagamura
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Patent number: 7771904Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: GrantFiled: August 6, 2009Date of Patent: August 10, 2010Assignees: Renesas Technology Corp., Toppan Printing Co., Ltd.Inventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Publication number: 20090297959Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: ApplicationFiled: August 6, 2009Publication date: December 3, 2009Applicant: RENESAS TECHNOLOGY CORPORATIONInventors: Yoshikazu NAGAMURA, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Patent number: 7585599Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: GrantFiled: July 30, 2007Date of Patent: September 8, 2009Assignee: Renesas Technology Corp.Inventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Patent number: 7582397Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: GrantFiled: July 30, 2007Date of Patent: September 1, 2009Assignee: Renesas Technology Corp.Inventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Publication number: 20090077524Abstract: A technique for quantitatively expressing a manufacturing difficulty level of a photomask and for efficiently manufacturing the photomask is provided. A mask manufacturing difficulty level different for each mask layout, product, and mask layer is relatively recognized with a mask manufacturing load index calculated by a mask manufacturing load prediction system, and when layout correction is possible, the final layout is corrected to a layout with a low difficulty level, and a mask ordering party provides a mask manufacturer with information regarding the mask manufacturing difficulty level in an early stage. The mask manufacturing load index is expressed with a defect guarantee load index and a lithography load index.Type: ApplicationFiled: August 7, 2008Publication date: March 19, 2009Inventors: Yoshikazu Nagamura, Shogo Narukawa
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Publication number: 20090042106Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: ApplicationFiled: July 30, 2007Publication date: February 12, 2009Applicants: RENESAS TECHNOLOGY CORP., TOPPAN PRINTING CO., LTDInventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Publication number: 20080301622Abstract: A method of determining defects in photomasks according to the present invention is designed to increase the yield of the manufacture of photomasks and to decrease the cost of inspecting the photomasks. In the method, circuit data 1 representing a circuit to be formed on a semiconductor substrate by photolithography is prepared, and layout data 2 is prepared from the circuit data 1. The layout data is converted to compensated layout data by performing RET. Further, mask-manufacturing data is developed from the compensated layout data. To form patterns on a semiconductor substrate by photolithography, attribute information is imparted to the mask-manufacturing data. The attribute information represents whether the patterns are adaptive to electrically active regions or electrically non-active region. In the mask-inspecting process 6, a criterion for determining whether the patterns formed on the photomasks have defects is changed in accordance with the attribute information.Type: ApplicationFiled: June 2, 2008Publication date: December 4, 2008Applicants: DAI NIPPON PRINTING CO., LTD., RENESAS TECHNOLOGY CORP.Inventors: Shogo NARUKAWA, Yoshikazu Nagamura
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Publication number: 20080020298Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a halt half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: ApplicationFiled: July 30, 2007Publication date: January 24, 2008Applicants: RENESAS TECHNOLOGY CORP., TOPPAN PRINTING CO., LTD.Inventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Patent number: 7264905Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: GrantFiled: November 17, 2003Date of Patent: September 4, 2007Assignees: Renesas Technology Corp., Toppan Printing Co., Ltd.Inventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Patent number: 7077915Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.Type: GrantFiled: October 20, 2003Date of Patent: July 18, 2006Assignees: Renesas Technology Corp., Organo Corporation, M. Watanabe & Co., Ltd.Inventors: Yoshikazu Nagamura, Nobuyuki Yoshioka, Koji Yamanaka, Hozumi Usui
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Patent number: 7001470Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).Type: GrantFiled: April 10, 2002Date of Patent: February 21, 2006Assignee: Renesas Technology Corp.Inventors: Koji Tange, Yoshikazu Nagamura, Kunihiro Hosono, Yasutaka Kikuchi, Yuki Oomasa, Koichi Kido
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Publication number: 20050274392Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).Type: ApplicationFiled: August 24, 2005Publication date: December 15, 2005Applicant: Renesas Technology Corp.Inventors: Koji Tange, Yoshikazu Nagamura, Kunihiro Hosono, Yasutaka Kikuchi, Yuki Oomasa, Koichi Kido
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Patent number: 6877151Abstract: The coordinate value of the deficient area detected by a wafer inspecting apparatus and the wafer inspecting data are transmitted to a coordinate transforming computer by use of an inspection-data managing computer. The coordinate value detected by the wafer inspection based on the wafer inspecting data and the photomask inspecting data is transformed into the coordinate value on the photomask, to thereby analyze the deficient area of the photomask.Type: GrantFiled: August 9, 2002Date of Patent: April 5, 2005Assignee: Renesas Technology Corp.Inventor: Yoshikazu Nagamura
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Publication number: 20040151992Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a halt tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.Type: ApplicationFiled: November 17, 2003Publication date: August 5, 2004Applicants: RENESAS TECHNOLOGY CORP., TOPPAN PRINTING CO., LTDInventors: Yoshikazu Nagamura, Kouji Tange, Kouki Hayashi, Hidehiro Ikeda
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Patent number: 6740896Abstract: In a pattern inspection apparatus inspecting a pattern formed on a device and the like with a plurality of inspection lights, a sensitivity adjustment method in which respective optical systems associated with the inspection lights are efficiently and precisely checked to adjust the sensitivity thereof is attained. The sensitivity adjusting method for adjusting sensitivity of the pattern inspection apparatus performing inspection with a plurality of inspection lights includes the steps of preparing a sensitivity adjusting substrate divided into a plurality of regions to which identical reference patterns are provided, and scanning the reference patterns with the plurality of inspection lights making one of the plurality of inspection lights respectively correspond to one of the reference patterns, after attaching the sensitivity adjusting substrate to the pattern inspection apparatus.Type: GrantFiled: October 15, 2002Date of Patent: May 25, 2004Assignee: Renesas Technology Corp.Inventor: Yoshikazu Nagamura
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Publication number: 20040079386Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.Type: ApplicationFiled: October 20, 2003Publication date: April 29, 2004Applicants: MITSUBISHI DENKI KABUSHIKI KAISHA, ORGANO CORPORATION, M. WATANABE & CO., LTD.Inventors: Yoshikazu Nagamura, Nobuyuki Yoshioka, Koji Yamanaka, Masaki Kusuhara, Hozumi Usui