Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Abstract: The purpose is to remove surface-defective layer existing on the surface of an anode on a CCM substrate, protect the anode surface, prevent a drive voltage of an organic EL element from rising, and maintain uniformity of luminescence. On a substrate (12) a CCM layer (14) for converting light wavelength is formed. On the CCM layer (14) an anode (16) of IZO is formed. On the anode (16) a surface protective layer (18) containing an inorganic compound is formed by an inductively coupled RF plasma support magnetron sputtering. A preferable inorganic compound is SiO2. The surface defective layer of the anode (16) can be removed by the sputtering and the state of being removed can be held by the inorganic compound. Therefore the electrical stability of the anode (16) can be maintained for a long time, thereby improving the display quality of an organic EL display (100).

Abstract: An organic EL element comprising; an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d5/2]h/[In3d5/2]n, is from 0.9 to 1.2 wherein [In3d5/2]h is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the surface of the anode, and [In3d5/2]n is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Abstract: The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i?(L0/Li)3cosni?i??(1) wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle ?i against the perpendicular line.

Abstract: An electrode substrate comprising; an electrode comprising a compound containing an In atom and a substrate body, wherein a half band width ratio [In3d5/2]h/[In3d5/2]n is from 0.9 to 1.2 wherein [In3d5/2]h is a half band width of a 3d5/2 orbit spectral peak of an In atom in the surface of the electrode, and [In3d5/2]n is a half band width of a 3d5/2 orbit spectral peak of an In atom in the interior of the electrode, the spectral peaks being measured by X-ray photoelectron spectroscopy: and the method for the production thereof.

Abstract: An organic EL element comprising; an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d5/2]h/[In3d5/2]n, is from 0.9 to 1.2 wherein [In3d5/2]h is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the surface of the anode, and [In3d5/2]n is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Abstract: An organic EL element comprising; an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d5/2]h/[In3d5/2]n, is from 0.9 to 1.2 wherein [In3d5/2]h is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the surface of the anode, and [In3d5/2]n is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Abstract: An organic EL element comprising: an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d5/2]h/[In3d5/2]n, is from 0.9 to 1.2 wherein [In3d5/2]h is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the surface of the anode, and [In3d5/2]n is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Abstract: The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.

Abstract: An electrode substrate comprising; an electrode comprising a compound containing an In atom and a substrate body, wherein a half band width ratio [In3d5/2]h/[In3d5/2]n is from 0.9 to 1.2 wherein [In3d5/2]h is a half band width of a 3d5/2 orbit spectral peak of an In atom in the surface of the electrode, and [In3d5/2]n is a half band width of a 3d5/2 orbit spectral peak of an In atom in the interior of the electrode, the spectral peaks being measured by X-ray photoelectron spectroscopy: and the method for the production thereof.

Abstract: The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i∝(L0/Li)3 cosni&thgr;i  (1) wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle &thgr;i against the perpendicular line.

Abstract: An organic electroluminescent device including a lower electrode, an organic light-emission medium, and an upper electrode on a support substrate, wherein the water content of the organic light-emission medium does not exceed 0.05 wt. %. By so controlling the water content of the organic light-emission medium, it is possible to prevent shrinkage of a light-emission area based on production of non-emission parts or non-emission spots for a long time at both high temperature and room temperature conditions. A method of making the organic electroluminescent device is disclosed also.

Abstract: The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.

Abstract: An organic EL device comprising a lower electrode, an organic light-emission medium and an upper electrode on a support substrate, wherein the water content of the organic light-emission medium is 0.05 wt. % or less and its making method thereof. By constituting the organic EL device like this, it is possible to prevent the shrinkage of light-emission area based on production of the non-emission parts or non-emission spots for a long time at the high temperature condition as well as the room condition.