Patents by Inventor Yoshikazu Nozaki

Yoshikazu Nozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7849815
    Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.
    Type: Grant
    Filed: October 20, 2008
    Date of Patent: December 14, 2010
    Assignee: Canon Anelva Corporation
    Inventors: Tomoaki Osada, Yoshikazu Nozaki
  • Publication number: 20090044910
    Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.
    Type: Application
    Filed: October 20, 2008
    Publication date: February 19, 2009
    Applicant: ANELVA CORPORATION
    Inventors: Tomoaki OSADA, Yoshikazu NOZAKI
  • Patent number: 7457238
    Abstract: A transmission system can perform flow control even if a flow control instruction is invalidated, and even when the transmission system malfunctions, it can autonomously recover to normal operation for communications. A flow control instruction sender has at least one of two functions including a normal transmission mode to send a flow control instruction for flow control over a congestion state if an event, such as the occurrence of a congestion or the removal of a congestion, occurs when a data receiver receives data, and an autonomous transmission mode to select one of a plurality of congestion states at present in each period and autonomously send a flow control instruction corresponding to the selected congestion state. The flow control instruction sender preferentially sends a flow control instruction in the normal transmission mode in which a congestion actually occurs or is actually removed, when timings of the normal transmission mode and the autonomous transmission mode coincide with each other.
    Type: Grant
    Filed: June 9, 2004
    Date of Patent: November 25, 2008
    Assignee: Fujitsu Limited
    Inventors: Akikazu Maehara, Hiroo Uchiyama, Yoshikazu Nozaki, Etsuko Yamashita
  • Patent number: 7164571
    Abstract: A wafer stage for holding a wafer in a chamber of a plasma processing system, the wafer stage includes an electrode on which a wafer is placed, to which electrical current is supplied, a diameter of the electrode is larger than a diameter of said wafer, a plurality of magnets separately arranged on an outermost region of said electrode and said magnets are arranged such that alternate magnetic poles face towards the inside of the chamber, and an outer-ring placed around said wafer, the outer ring having a magnetic metal ring at a lower side.
    Type: Grant
    Filed: February 19, 2005
    Date of Patent: January 16, 2007
    Assignee: Anelva Corporation
    Inventors: Sunil Wickramanayaka, Yoshikazu Nozaki
  • Patent number: 7159537
    Abstract: A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: January 9, 2007
    Assignee: Anelva Corporation
    Inventors: Sunil Wickramanayaka, Masahito Ishihara, Yoshikazu Nozaki, Hiroshi Doi
  • Publication number: 20050185359
    Abstract: A wafer stage for holding a wafer in a chamber of a plasma processing system, the wafer stage includes an electrode on which a wafer is placed, to which electrical current is supplied, a diameter of the electrode is larger than a diameter of said wafer, a plurality of magnets separately arranged on an outermost region of said electrode and said magnets are arranged such that alternate magnetic poles face towards the inside of the chamber, and an outer-ring placed around said wafer, the outer ring having a magnetic metal ring at a lower side.
    Type: Application
    Filed: February 19, 2005
    Publication date: August 25, 2005
    Applicant: ANELVA CORPORATION
    Inventors: Sunil Wickramanayaka, Yoshikazu Nozaki
  • Publication number: 20050083837
    Abstract: A transmission system can perform flow control even if a flow control instruction is invalidated, and even when the transmission system malfunctions, it can autonomously recover to normal operation for communications. A flow control instruction sender has at least one of two functions including a normal transmission mode to send a flow control instruction for flow control over a congestion state if an event, such as the occurrence of a congestion or the removal of a congestion, occurs when a data receiver receives data, and an autonomous transmission mode to select one of a plurality of congestion states at present in each period and autonomously send a flow control instruction corresponding to the selected congestion state. The flow control instruction sender preferentially sends a flow control instruction in the normal transmission mode in which a congestion actually occurs or is actually removed, when timings of the normal transmission mode and the autonomous transmission mode coincide with each other.
    Type: Application
    Filed: June 9, 2004
    Publication date: April 21, 2005
    Inventors: Akikazu Maehara, Hiroo Uchiyama, Yoshikazu Nozaki, Etsuko Yamashita
  • Publication number: 20050028935
    Abstract: A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.
    Type: Application
    Filed: June 24, 2004
    Publication date: February 10, 2005
    Applicant: ANELVA Corporation
    Inventors: Sunil Wickramanayaka, Masahito Ishihara, Yoshikazu Nozaki, Hiroshi Doi
  • Publication number: 20040149216
    Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.
    Type: Application
    Filed: November 10, 2003
    Publication date: August 5, 2004
    Applicant: ANELVA CORPORATION
    Inventors: Tomoaki Osada, Yoshikazu Nozaki
  • Publication number: 20010030024
    Abstract: This invention presents a plasma-enhanced processing apparatus, comprising; a process chamber in which a substrate is processed, a pumping system that pumps the process chamber, a gas-introduction system that introduces process gas into the process chamber, a plasma-generation means that generates plasma in the process chamber by applying energy to the process gas, a substrate holder that holds the substrate in the process chamber. An opposite electrode facing to the substrate held by the substrate holder is provided. The opposite electrode comprises a clamping mechanism that clamps the front board to support it. The opposite electrode comprises a main body, and a cooling mechanism that cools the front board via the main body. The clamping mechanism clamps the periphery of the front board by a clamping plate in surface contact with the front board. The clamping plate is flush with the front board.
    Type: Application
    Filed: March 16, 2001
    Publication date: October 18, 2001
    Applicant: Anelva Corporation
    Inventors: Yasumi Sago, Kazuaki Kaneko, Yoshikazu Nozaki