Patents by Inventor Yoshikazu Nozaki
Yoshikazu Nozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7849815Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.Type: GrantFiled: October 20, 2008Date of Patent: December 14, 2010Assignee: Canon Anelva CorporationInventors: Tomoaki Osada, Yoshikazu Nozaki
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Publication number: 20090044910Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.Type: ApplicationFiled: October 20, 2008Publication date: February 19, 2009Applicant: ANELVA CORPORATIONInventors: Tomoaki OSADA, Yoshikazu NOZAKI
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Patent number: 7457238Abstract: A transmission system can perform flow control even if a flow control instruction is invalidated, and even when the transmission system malfunctions, it can autonomously recover to normal operation for communications. A flow control instruction sender has at least one of two functions including a normal transmission mode to send a flow control instruction for flow control over a congestion state if an event, such as the occurrence of a congestion or the removal of a congestion, occurs when a data receiver receives data, and an autonomous transmission mode to select one of a plurality of congestion states at present in each period and autonomously send a flow control instruction corresponding to the selected congestion state. The flow control instruction sender preferentially sends a flow control instruction in the normal transmission mode in which a congestion actually occurs or is actually removed, when timings of the normal transmission mode and the autonomous transmission mode coincide with each other.Type: GrantFiled: June 9, 2004Date of Patent: November 25, 2008Assignee: Fujitsu LimitedInventors: Akikazu Maehara, Hiroo Uchiyama, Yoshikazu Nozaki, Etsuko Yamashita
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Patent number: 7164571Abstract: A wafer stage for holding a wafer in a chamber of a plasma processing system, the wafer stage includes an electrode on which a wafer is placed, to which electrical current is supplied, a diameter of the electrode is larger than a diameter of said wafer, a plurality of magnets separately arranged on an outermost region of said electrode and said magnets are arranged such that alternate magnetic poles face towards the inside of the chamber, and an outer-ring placed around said wafer, the outer ring having a magnetic metal ring at a lower side.Type: GrantFiled: February 19, 2005Date of Patent: January 16, 2007Assignee: Anelva CorporationInventors: Sunil Wickramanayaka, Yoshikazu Nozaki
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Patent number: 7159537Abstract: A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.Type: GrantFiled: June 24, 2004Date of Patent: January 9, 2007Assignee: Anelva CorporationInventors: Sunil Wickramanayaka, Masahito Ishihara, Yoshikazu Nozaki, Hiroshi Doi
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Publication number: 20050185359Abstract: A wafer stage for holding a wafer in a chamber of a plasma processing system, the wafer stage includes an electrode on which a wafer is placed, to which electrical current is supplied, a diameter of the electrode is larger than a diameter of said wafer, a plurality of magnets separately arranged on an outermost region of said electrode and said magnets are arranged such that alternate magnetic poles face towards the inside of the chamber, and an outer-ring placed around said wafer, the outer ring having a magnetic metal ring at a lower side.Type: ApplicationFiled: February 19, 2005Publication date: August 25, 2005Applicant: ANELVA CORPORATIONInventors: Sunil Wickramanayaka, Yoshikazu Nozaki
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Publication number: 20050083837Abstract: A transmission system can perform flow control even if a flow control instruction is invalidated, and even when the transmission system malfunctions, it can autonomously recover to normal operation for communications. A flow control instruction sender has at least one of two functions including a normal transmission mode to send a flow control instruction for flow control over a congestion state if an event, such as the occurrence of a congestion or the removal of a congestion, occurs when a data receiver receives data, and an autonomous transmission mode to select one of a plurality of congestion states at present in each period and autonomously send a flow control instruction corresponding to the selected congestion state. The flow control instruction sender preferentially sends a flow control instruction in the normal transmission mode in which a congestion actually occurs or is actually removed, when timings of the normal transmission mode and the autonomous transmission mode coincide with each other.Type: ApplicationFiled: June 9, 2004Publication date: April 21, 2005Inventors: Akikazu Maehara, Hiroo Uchiyama, Yoshikazu Nozaki, Etsuko Yamashita
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Publication number: 20050028935Abstract: A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.Type: ApplicationFiled: June 24, 2004Publication date: February 10, 2005Applicant: ANELVA CorporationInventors: Sunil Wickramanayaka, Masahito Ishihara, Yoshikazu Nozaki, Hiroshi Doi
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Publication number: 20040149216Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.Type: ApplicationFiled: November 10, 2003Publication date: August 5, 2004Applicant: ANELVA CORPORATIONInventors: Tomoaki Osada, Yoshikazu Nozaki
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Publication number: 20010030024Abstract: This invention presents a plasma-enhanced processing apparatus, comprising; a process chamber in which a substrate is processed, a pumping system that pumps the process chamber, a gas-introduction system that introduces process gas into the process chamber, a plasma-generation means that generates plasma in the process chamber by applying energy to the process gas, a substrate holder that holds the substrate in the process chamber. An opposite electrode facing to the substrate held by the substrate holder is provided. The opposite electrode comprises a clamping mechanism that clamps the front board to support it. The opposite electrode comprises a main body, and a cooling mechanism that cools the front board via the main body. The clamping mechanism clamps the periphery of the front board by a clamping plate in surface contact with the front board. The clamping plate is flush with the front board.Type: ApplicationFiled: March 16, 2001Publication date: October 18, 2001Applicant: Anelva CorporationInventors: Yasumi Sago, Kazuaki Kaneko, Yoshikazu Nozaki