Abstract: A biaxially stretched polypropylene film which has a thickness of from 1.0 ?m to 3.5 ?m, a tensile fracture stress at 135° C. of 70 MPa or more in a first direction, and a difference between the tensile fracture stress at 125° C. in the first direction and the tensile fracture stress at 135° C. in the first direction of from 0 MPa to 15 MPa (inclusive).

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: Methods for forming silicon containing films using silylamine moieties are disclosed. In some embodiments, silylamine moieties are employed to deposit silicon-nitrogen, silicon-oxygen, or silicon-nitrogen-oxygen materials at temperatures of less than 550° C. In some embodiments methods are practiced within process chambers adapted to contain a single substrate as well as within process chambers adapted to contain a plurality of substrates, where the silylamine moieties are conveyed to the chambers in across flow type manner.

Abstract: In an apparatus for automatically supplying and selectively reproducing a plurality of cassettes, the error rate for each cassette and for each reproduction is automatically generated and stored in a separate area of a memory and, when the error rate exceeds a threshold rate, the deteriorating cassettes are automatically dubbed onto blank cassettes to ensure that deterioration of each tape or other record medium never exceeds a predetermined amount. In addition, the operator may independently cause any cassette to be dubbed when he deems the image produced therefrom to be too highly degraded regardless of the error rate of the signal recorded therein.

Abstract: A video signal reproducing device for use with a magnetic tape has at least one rotary magnetic head which reproduces the video signals recorded in slant tracks on the tape and a tape transport mechanism which drives the tape at controllably varied speeds. A first circuit selectively generates tape speed signals indicative of respective speeds of the tape. A second circuit selectively generates duration signals indicative of the time periods during which the tape is driven at the respective speeds. A memory stores the tape speed signals and the duration signals, and a system controller connected to the memory controls the tape transport mechanism to drive the tape at speeds and for durations determined by the tape speed signals and the respective duration signals read from the memory.

Abstract: A video signal reproducing device includes a magnetic head for reproducing the video signal recorded in slant tracks on a magnetic tape, a transport mechanism for driving the tape at a controllably varied speed, and a tracking control circuit for supplying tracking control signals to the magnetic head whereby the head tracks the recorded video signal. The device further includes a system control circuit for controlling the transport mechanism to drive the tape at a selected playback speed, and a display connected to the system control circuit for indicating a relationship between the predetermined duration and a duration of the reproduced video signal as played back with the tape driven at the selected playback speed.