Abstract: To expediently and quantitatively estimate Cu within a silicon substrate without fully dissolving the silicon substrate and to ascertain the process contamination, there is provided a method for quantitatively determining the Cu concentration in a Cu containing silicon substrate having obverse and converse surfaces, the silicon substrate contains at least 3×1018 atoms/cm3 of boron and is heated at a temperature of no more than 600° C., the improvement comprises heating the converse surface of the substrate at a temperature between 300° C. to 350° C. for a period of 1 to 12 hours and then quantitatively analyze the Cu concentration at obverse and converse surfaces of the heated substrate.

Abstract: This method for analyzing impurity includes: a step of immersing each of sets of two evaluation silicon wafers into a washing solution, thereby contaminating the evaluation silicon wafers to be in a same state of contamination; a step of dissolving each of a surface layer portion of either one of the evaluation silicon wafers and a bulk portion of the other evaluation silicon wafer with solutions including hydrofluoric acid respectively, and measuring a concentration of impurities included in each of the solutions; a step of determining a calibration curve that shows a relation between the concentrations of the impurities in the surface layer portions and the concentrations of the impurities in the bulk portions of the evaluation silicon wafers; a step of dissolving a surface layer portion of a silicon wafer of a test object with a solution including hydrofluoric acid, and measuring a concentration of impurities included in the solution; and a step of determining a concentration of impurities in a bulk portio

Abstract: This method for analyzing impurity includes: a step of immersing each of sets of two evaluation silicon wafers into a washing solution, thereby contaminating the evaluation silicon wafers to be in a same state of contamination; a step of dissolving each of a surface layer portion of either one of the evaluation silicon wafers and a bulk portion of the other evaluation silicon wafer with solutions including hydrofluoric acid respectively, and measuring a concentration of impurities included in each of the solutions; a step of determining a calibration curve that shows a relation between the concentrations of the impurities in the surface layer portions and the concentrations of the impurities in the bulk portions of the evaluation silicon wafers; a step of dissolving a surface layer portion of a silicon wafer of a test object with a solution including hydrofluoric acid, and measuring a concentration of impurities included in the solution; and a step of determining a concentration of impurities in a bulk portio

Abstract: To expediently and quantitatively estimate Cu within a silicon substrate without fully dissolving the silicon substrate and to ascertain the process contamination, there is provided a method for quantitatively determining the Cu concentration in a Cu containing silicon substrate having obverse and converse surfaces, the silicon substrate contains at least 3×1018 atoms/cm3 of boron and is heated at a temperature of no more than 600° C., the improvement comprises heating the converse surface of the substrate at a temperature between 300° C. to 350° C. for a period of 1 to 12 hours and then quantitatively analyze the Cu concentration at obverse and converse surfaces of the heated substrate.