Patents by Inventor Yoshikazu Yama

Yoshikazu Yama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4575852
    Abstract: A p-type semiconductor layer and an active layer and an n-type semiconductor layer are laminated in this order onto an n-type semiconductor layer. The n-type semiconductor layer is provided with an electron injection electrode on its upper part and a narrow current path is formed in its interior with the inversion diffusion layers. A positive hole injection electrode is provided on the p-type semiconductor layer. The direction of taking out the positive hole injection layer is the same as that of the electron injection electrode.
    Type: Grant
    Filed: June 6, 1983
    Date of Patent: March 11, 1986
    Assignee: Omron Tateisi Electronics, Co.
    Inventors: Akira Fujimoto, Shigeaki Yamashita, Hirohiko Yasuda, Yoshikazu Yama